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Dive into the research topics where B. Partoens is active.

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Featured researches published by B. Partoens.


Physical Review B | 2008

Adsorption of H 2 O , N H 3 , CO, N O 2 , and NO on graphene: A first-principles study

Ortwin Leenaerts; B. Partoens; F. M. Peeters

Motivated by the recent realization of graphene sensors to detect individual gas molecules, we investigate the adsorption of


Physical Review B | 2010

First-principles investigation of graphene fluoride and graphane

Ortwin Leenaerts; Hartwin Peelaers; A. D. Hernández-Nieves; B. Partoens; F. M. Peeters

{\mathrm{H}}_{2}\mathrm{O}


Applied Physics Letters | 2008

Graphene: A perfect nanoballoon

Ortwin Leenaerts; B. Partoens; F. M. Peeters

,


Physical Review B | 2010

Stacking order dependent electric field tuning of the band gap in graphene multilayers

A. A. Avetisyan; B. Partoens; F. M. Peeters

\mathrm{N}{\mathrm{H}}_{3}


Physical Review B | 2013

Adsorption and absorption of boron, nitrogen, aluminum, and phosphorus on silicene: Stability and electronic and phonon properties

Jozef Sivek; Hasan Sahin; B. Partoens; F. M. Peeters

, CO,


Microelectronics Journal | 2009

Adsorption of small molecules on graphene

Ortwin Leenaerts; B. Partoens; F. M. Peeters

\mathrm{N}{\mathrm{O}}_{2}


Journal of Physics: Condensed Matter | 2012

Electronic structure of transparent oxides with the Tran–Blaha modified Becke–Johnson potential

H Dixit; R Saniz; Stefaan Cottenier; D Lamoen; B. Partoens

, and NO on a graphene substrate using first-principles calculations. The optimal adsorption position and orientation of these molecules on the graphene surface is determined and the adsorption energies are calculated. Molecular doping, i.e., charge transfer between the molecules and the graphene surface, is discussed in light of the density of states and the molecular orbitals of the adsorbates. The efficiency of doping of the different molecules is determined and the influence of their magnetic moment is discussed.


Applied Physics Letters | 2008

Paramagnetic adsorbates on graphene: A charge transfer analysis

Ortwin Leenaerts; B. Partoens; F. M. Peeters

Different stoichiometric configurations of graphane and graphene fluoride are investigated within density functional theory. Their structural and electronic properties are compared, and we indicate the similarities and differences among the various configurations. Large differences between graphane and graphene fluoride are found that are caused by the presence of charges on the fluorine atoms. A new configuration that is more stable than the boat configuration is predicted for graphene fluoride. We also perform GW calculations for the electronic band gap of both graphene derivatives. These band gaps and also the calculated Youngs moduli are at variance with available experimental data. This might indicate that the experimental samples contain a large number of defects or are only partially covered with H or F.


New Journal of Physics | 2011

Electronic structure and band gap of zinc spinel oxides beyond LDA: ZnAl2O4, ZnGa2O4 and ZnIn2O4

H Dixit; N Tandon; Stefaan Cottenier; R Saniz; D Lamoen; B. Partoens; Veronique Van Speybroeck; Michel Waroquier

We have performed a first-principles density functional theory investigation of the penetration of helium atoms through a graphene monolayer with defects. The relaxation of the graphene layer caused by the incoming helium atoms does not have a strong influence on the height of the energy barriers for penetration. For defective graphene layers, the penetration barriers decrease exponentially with the size of the defects but they are still sufficiently high that very large defects are needed to make the graphene sheet permeable for small atoms and molecules. This makes graphene a very promising material for the construction of nanocages and nanomembranes.


Applied Physics Letters | 2011

Vibrational properties of graphene fluoride and graphane

H. Peelaers; A. D. Hernández-Nieves; Ortwin Leenaerts; B. Partoens; F. M. Peeters

The effect of different stacking order of graphene multilayers on the electric field induced band gap is investigated. We considered a positively charged top and a negatively charged back gate in order to independently tune the band gap and the Fermi energy of three and four layer graphene systems. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We found that the gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. Also we predict that for four layers of graphene the energy gap strongly depends on the choice of stacking, and we found that the gap for the different types of stacking is much larger as compared to the case of Bernal stacking. Trigonal warping changes the size of the induced electronic gap by approximately 30% for intermediate and large values of the induced electron density.

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D. Lamoen

University of Antwerp

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Y. Sidor

University of Antwerp

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