B. Xu

High-performance quantum-dot superluminescent diodes

By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD) laser diode structure of 6/spl deg/ with respect to the facets, high-power and broad-band superluminescent diodes (SLDs) have been fabricated. It indicates that high-performance SLD could be easily realized by using SAQD as the active region.

Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7−x capacitor

Pt/(Ba0.7Sr0.3)TiO3 (BST)/YBa2Cu3O7−x capacitors were prepared and investigated for the dead-layer (DL) thickness (td) and the DL dielectric constant (ed). Based on the series capacitor model, the td/ed ratio of 0.066 nm and the bulk BST ferroelectric-layer dielectric constant of 1370 were obtained through the measurements of the capacitance–voltage characteristics. The td×ed value of 120 nm was obtained through the measurements of the current–voltage characteristics. Combining these data, the DL thickness and the DL dielectric constant are respectively estimated to be 2.8 nm and 42.6.

Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O3 films on Si with ultrathin SiO2 buffer layer

Highly (100) oriented Pb(Zr0.53Ti0.47)O3 (PZT) films were prepared on Si substrates with ultrathin SiO2 buffer layer by pulsed laser deposition. Hysteresis measurements show that saturation polarization, remnant polarization and coercive field of the films reach 26u2009μC/cm2, 10u2009μC/cm2 and 70 kV/cm, respectively. The thickness of SiO2 buffer layer is found to play a significant role on phase purity and orientation of PZT as well as the prevention of interdiffusion. It is also found that the grain size and the interdiffusion between PZT and Si are the key factors for the ferroelectric properties of the films, which are discussed together with the synthesis condition in detail.

Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process.

The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a 3 dB emission bandwidth of 146 nm centered at 984 nm with cw output power as high as 15 mW at room temperature corresponding to an extremely small coherence length of 6.6 microm.

Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1−xAs (0⩽x⩽0.3)

Optical and structural investigations of InAs quantum dots (QDs) covered by InxGa1-xAs (0 less than or equal to x less than or equal to 0.3) overgrowth layer have been systematically reported. The decrease of strain in the growth direction of InAs quantum dots covered by InGaAs layer instead of GaAs is demonstrated by transmission electron microscopy experiments. In addition, the atomic force microscopy measurement shows that the surface of InAs islands with 3-nm-thick In0.2Ga0.8As becomes flatter. However, the InGaAs islands nucleate on the top of quantum dots during the process of InAs islands covered with In0.3Ga0.7As. The significant redshift of the photoluminescence peak energy and reduction of photoluminescence linewidth of InAs quantum dots covered by InGaAs are observed. The energy gap change of InAs QDs covered by InGaAs could be explained in terms of reducing strain, suppressing compositional mixing, and increasing island height

Re-entrant spin glass behavior in Mn-rich YMnO3

We use magnetism and specific heat measurements to investigate the hexagonal Mn-rich YMnO3. It is found that upon cooling from a high temperature, the compound first orders antiferromagnetically at TN∼72K and then undergoes a re-entrant spin glass (RSG) transition at TSG∼42K. This RSG behavior results from the competition between the ferromagnetic interaction and the antiferromagnetic interaction, which is related to the intrinsic geometric magnetic frustration in this system.

Leakage current of Pt∕(Ba0.7Sr0.3)TiO3 interface with dead layer

Leakage current of Pt∕(Ba0.7Sr0.3)TiO3 (BST)∕YBa2Cu3O7−δ capacitors on a (001) SrTiO3 substrate was studied. By modeling a low-dielectric constant layer, a so-called dead layer, between the Pt∕BST interface as a parasitic capacitor in series with the bulk layer capacitor, the leakage current of Pt∕BST interface was well analyzed based on the modified Schottky emission equation. Furthermore, a two-step schematic energy band diagram is proposed to explain the carrier transport through the Pt∕BST interface.

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results

Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots

Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots (QDs), which are grown at relative low temperature (460degreesC) and embedded in GaAs p-i-n structure, have been studied by dc-biased electroreflectance. Franz-Keldysh oscillations from the undoped GaAs layer are used to determine the electric field under various bias voltages. Stark shift of -34 meV for the ground-state interband transition of the QDs is observed when the electric field increases from 105 to 308 kV/cm. The separation of the electron and hole states in the growth direction of 0.4 nm, corresponding to the built-in dipole moment of 6.4x10(-29) C m, is determined. It is found that the electron state lies above that of the hole, which is the same as that predicted by theoretical calculations for ideal pyramidal InAs QDs

ASYMMETRY IN THE HYSTERESIS LOOP OF PB(ZR0.53TI0.47)O3/SIO2/SI STRUCTURES

The integrated ferroelectric/semiconductor systems, Pb(Zr0.53Ti0.47)O3u200a(PZT)/SiO2/Si have been prepared and investigated. It was found that an asymmetry related to the conduction type of the substrate (Si) and the polarization direction of PZT exists in the polarization–voltage loops of the integrated system. According to the configuration and the characteristic of the integrated structure, we suggest that the space charge layer in Si and the tunneling process between Si and PZT during the polarization are the main causes for this asymmetry.