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Dive into the research topics where Baohong Gao is active.

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Featured researches published by Baohong Gao.


Materials Research Innovations | 2015

Effect of annealing temperature on microstructure and thermoelectric properties of bismuth–telluride multilayer thin films prepared by magnetron sputtering

J. X. Zhang; Q. Li; P. J. Niu; Q. X. Yang; Baimei Tan; Xinhuan Niu; Baohong Gao

Abstract N-type bismuth–telluride (Bi–Te) multilayer thin films with total thickness of about 900 nm were deposited on amorphous structure glass substrate by magnetron sputtering at room temperature. The films were annealed at different temperatures under Ar ambient for 1 hour. The effect of annealing temperature was investigated for Bi–Te multilayer thin films by surface topography, chemical composition, crystal structure and thermoelectric properties. The results show that the Bi–Te multilayer thin films are all transformed into Bi–Te-based compounds. With the annealing temperature increasing, the films undergo an island growth mode with column structure, and grain size increases from 16·4 to 23·1 nm; in addition, the electrical conductivity and carrier mobility increase monotonously. The maximum Seebeck coefficient (−98·5 μV K−1) and power factor (14·47 μW K−2 cm−1) can be obtained for stoichiometric Bi2Te3 films annealed at 150°C.


Journal of Semiconductors | 2015

A novel compound cleaning solution for benzotriazole removal after copper CMP

Zhangbing Gu; Baohong Gao; Chenwei Wang; Haiwen Deng

After the chemical mechanical planarization (CMP) process, the copper surface is contaminated by a mass of particles (e.g.silica) and organic residues (e.g.benzotriazole), which could do great harm to the integrated circuit, so post-CMP cleaning is essential.In particular, benzotriazole (BTA) forms a layer of Cu-BTA film with copper on the surface, which leads to a hydrophobic surface of copper.So an effective cleaning solution is needed to remove BTA from the copper surface.In this work, a new compound cleaning solution is designed to solve two major problems caused by BTA:one is removing BTA and the other is copper surface corrosion that is caused by the cleaning solution.The cleaning solution is formed of alkaline chelating agent (FA/O II type), which is used to remove BTA, and a surfactant (FA/O I type), which is used as a corrosion inhibitor.BTA removal is characterized by contact angle measurements and electrochemical techniques.The inhibiting corrosion ability of the surfactant is also characterized by electrochemical techniques.The proposed compound cleaning solution shows advantages in removing BTA without corroding the copper surface.


Microelectronic Engineering | 2012

A study on the comparison of CMP performance between a novel alkaline slurry and a commercial slurry for barrier removal

Chenwei Wang; Jianying Tian; Baohong Gao; Xinhuan Niu


Thin Solid Films | 2011

Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model

Xiaoyan Liu; Yuling Liu; Yan Liang; Haixiao Liu; Zhiwen Zhao; Baohong Gao


Microelectronic Engineering | 2011

Optimization of slurry components for a copper chemical mechanical polishing at low down pressure using response surface methodology

Xiaoyan Liu; Yuling Liu; Yan Liang; Haixiao Liu; Yi Hu; Baohong Gao


Microelectronic Engineering | 2012

Kinetics model incorporating both the chemical and mechanical effects on material removal for copper chemical mechanical polishing

Xiaoyan Liu; Yan Liang; Zhiwen Zhao; Baohong Gao


Microelectronic Engineering | 2018

Application of surfactant for facilitating benzotriazole removal and inhibiting copper corrosion during post-CMP cleaning

Jiying Tang; Chenwei Wang; Xinhuan Niu; Baimei Tan; Baohong Gao


ECS Journal of Solid State Science and Technology | 2018

Role of Penetrating Agent on Colloidal Silica Particle Removal during Post Cu CMP Cleaning

Liu Yang; Chenwei Wang; Baimei Tan; Baohong Gao; Chunyu Han; Yilin Liu; Xinliang Tang


ECS Journal of Solid State Science and Technology | 2018

Study on the Mechanism of Micro-Defect Reduction during Si Final Polishing with Water-Soluble Polymers

Yanlei Li; Yangang He; Chenwei Wang; Ming Sun; Jianwei Zhou; Baohong Gao; Xiaoyan Liao


ECS Journal of Solid State Science and Technology | 2018

Studies on Electrochemical Characteristics of SiGe in Application to Chemical Mechanical Polishing

Shenghua Yang; Baoguo Zhang; Chenwei Wang; Wenqian Zhang; Baohong Gao

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Chenwei Wang

Hebei University of Technology

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Xiaoyan Liu

Hebei University of Technology

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Baimei Tan

Hebei University of Technology

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Xinhuan Niu

Hebei University of Technology

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Zhiwen Zhao

Hebei University of Technology

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Haixiao Liu

Hebei University of Technology

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Juan Wang

Hebei University of Technology

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Ming Sun

Hebei University of Technology

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Yi Hu

Hebei University of Technology

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Yuling Liu

Hebei University of Technology

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