Barbara Abendroth

An extreme biomimetic approach: hydrothermal synthesis of β-chitin/ZnO nanostructured composites

β-Chitinous scaffolds isolated from the skeleton of marine cephalopod Sepia officinalis were used as a template for the in vitro formation of ZnO under conditions (70 °C) which are extreme for biological materials. Novel β-chitin/ZnO film-like composites were prepared for the first time by hydrothermal synthesis, and were thoroughly characterized using numerous analytical methods including Raman spectroscopy, HR-TEM and XRD. We demonstrate the growth of hexagonal ZnO nanocrystals on the β-chitin substrate. Our chitin/ZnO composites presented in this work show antibacterial properties against Gram positive bacteria and can be employed for development of inorganic-organic wound dressing materials.

Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors.

Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO3 memristors containing mobile oxygen vacancies. Increased switching speed is possible by applying a large amplitude writing pulse as the resistive switching is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size.

Single crystal strontium titanate surface and bulk modifications due to vacuum annealing

Vacuum annealing is a widely used method to increase the electric conductivity of SrTiO3 single crystals. The induced oxygen vacancies act as intrinsic donors and lead to n-type conductivity. Apart from the changed electronic structure, however, also crystal structure modifications arise from this treatment. Hence, electronic properties are determined by the interplay between point defects and line defects. The present paper provides a survey of the real structure of commercially available SrTiO3 single crystals and the changes induced by reducing vacuum heat-treatment. Therefore, all investigations were performed ex situ, i.e., after the annealing process. Used characterization methods include atomic force microscopy, transmission electron microscopy, spectroscopic ellipsometry, infrared spectroscopy, and photoluminescence spectroscopy. Besides the expected variation of bulk properties, especially surface modifications have been detected. The intrinsic number of near-surface dislocations in the samples w...

Crystallization dynamics and interface stability of strontium titanate thin films on silicon

Nonstoichiometric SrTiO3 thin films were fabricated by different thin-film deposition methods. The impact on the oxide/silcon interface stability as well as the crystallization onset temperature is investigated.

Utilizing dynamic annealing during ion implantation: synthesis of silver nanoparticles in crystalline lithium niobate

Silver nanoparticles (NPs) embedded in lithium niobate were fabricated via ion beam synthesis and are suitable for various plasmonic applications, e.g. enhancement of optical nonlinear effects. After room temperature silver implantation, annealing in the temperature range of 400-600 °C was performed in order to recrystallize the damaged lithium niobate surface layer. The shape of the silver NPs, their optical properties as well as the structural properties of their surrounding matrix have been analyzed for various annealing steps. TEM investigations show that annealing at 400 °C does not lead to recrystallization of the damaged lithium niobate. A recrystallization occurs upon increasing the annealing temperature to 500 or 600 °C, but simultaneously a second phase consisting of lithium triniobate forms. This is additionally supported by XRD measurements. By utilizing dynamic annealing, i.e. implanting silver at elevated temperatures of 400 °C, it is shown that the LiNbO3 matrix stays single crystalline during ion implantation and no LiNb3O8 is formed. This is additionally verified by comparing the positions of the surface plasmon resonances with calculations based on Mies scattering theory.

Photocapacitive light sensor based on metal-YMnO3-insulator-semiconductor structures

Technology of light sensors, due to the wide range of applications, is a dynamically developing branch of both science and industry. This work presents concept of photodetectors based on a metal-ferroelectric-insulator-semiconductor, a structure which has not been thoroughly explored in the field of photodetectors. Functionality of the presented light sensor exploits the effects of photocapacitive phenomena, ferroelectric polarization, and charge trapping. This is accomplished by an interplay between polarization alignment, subsequent charge distribution, and charge trapping processes under given illumination condition and gate voltage. Change of capacitance serves as a read out parameter indicating the wavelength and intensity of the illuminating light. The operational principle of the proposed photocapacitive light sensor is demonstrated in terms of capacitance-voltage and capacitance-time characteristics of an Al/YMnO3/SiNx/p-Si structure exposed to green, red, and near infrared light. Obtained results...

Au-free ohmic Ti/Al/TiN contacts to UID n-GaN fabricated by sputter deposition

The fabrication and characterization of an Au-free Ti/Al/TiN (20/100/100 nm) contact stack to unintentionally doped n-GaN with TiN serving as the diffusion barrier is presented. Sputter deposition and lift-off in combination with post deposition annealing at 850 °C are used for contact formation. After annealing, contact shows ohmic behavior to n-GaN and a specific contact resistivity of 1.60 × 10−3 Ω cm2. To understand the contact formation on the microscopic scale, the contact was characterized by current–voltage measurements, linear transmission line method, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. The results show the formation of Ti-N bonds at the GaN/Ti interface in the as-deposited stack. Annealing leads to diffusion of Ti, Al, Ga, and N, and the remaining metallic Ti is fully consumed by the formation of the intermetallic tetragonal Al3Ti phase. Native oxide from the GaN surface is trapped during annealing and accumulated in the Al interlayer. The ...

Thouless length and valley degeneracy factor of ZnMnO thin films with anisotropic, highly conductive surface layers

Isothermal magnetoresistance (MR) of n-type conducting Zn1–xMnxO thin films on a sapphire substrate with a Mn content of 5 at. % has been studied in in-plane and out-of-plane magnetic fields up to 6 T in the temperature range of 5 K to 300 K. During pulsed laser deposition of the ZnMnO thin films, we controlled the thickness and roughness of a highly conductive ZnMnO surface layer. The measured MR has been modeled with constant s-d exchange (0.2 eV in ZnMnO) and electron spin (S = 5/2 for Mn2+) for samples with a single two dimensional (2D) ZnMnO layer, a single three dimensional (3D) ZnMnO layer, or a 2D and 3D (2D + 3D) ZnMnO layer in parallel. The temperature dependence of modeled Thouless length LTh (LTh ∼ T−0.5) is in good agreement with the theory [Andrearczyk et al., Phys. Rev. B 72, 121309(R) (2005)]. The superimposed positive and negative MR model for ZnCoO thin films [Xu et al., Phys. Rev. B 76, 134417 (2007)] has been extended in order to account for the increase in the density of states close ...