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Dive into the research topics where Barbara E. Landini is active.

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Featured researches published by Barbara E. Landini.


Archive | 2001

METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES

Jeffrey S. Flynn; George R. Brandes; Robert P. Vaudo; David M. Keogh; Xueping Xu; Barbara E. Landini


Archive | 2002

III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same

Jeffrey S. Flynn; George R. Brandes; Robert P. Vaudo; David M. Keogh; Xueping Xu; Barbara E. Landini


Archive | 2000

Silicon carbide epitaxial layers grown on substrates offcut towards

Barbara E. Landini; George R. Brandes; Michael A. Tischler


Archive | 2002

III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates

Jeffrey S. Flynn; George R. Brandes; Robert P. Vaudo; David M. Keogh; Xueping Xu; Barbara E. Landini


Archive | 2011

HOMOEPITAXIAL III-V NITRIDE ARTICLE, DEVICE, AND METHOD OF FORMING III-V NITRIDE HOMOEPITAXIAL LAYER

George R. Brandes; Jeffrey S. Flynn; David M. Keogh; Barbara E. Landini; Robert P. Vaudo; Xueping Xu; ク,クエピング; ケオグ,デービッド,エム.; バウド,ロバート,ピー.; ブランデス,ジョージ,アール.; フリン,ジェフリー,エス.; ランディニ,バーバラ,イー.


Materials Science Forum | 2000

4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth

Barbara E. Landini; George R. Brandes


Archive | 2011

ホモエピタキシャルiii−v族窒化物品、デバイス、およびiii−v族窒化物ホモエピタキシャル層を形成する方法

George R. Brandes; Jeffrey S. Flynn; David M. Keogh; Barbara E. Landini; Robert P. Vaudo; Xueping Xu; ク,クエピング; ケオグ,デービッド,エム.; バウド,ロバート,ピー.; ブランデス,ジョージ,アール.; フリン,ジェフリー,エス.; ランディニ,バーバラ,イー.


Archive | 2001

Verfahren zum Erreichen verbesserter epitaxialer Qualität (Oberflächenstruktur und Defektdichte) auf frei stehenden (Aluminium, Indium, Gallium) Nitrid ((Al, In, Ga)N) -Substraten für optoelektronische und elektronische Vorrichtungen

Jeffrey S. Flynn; Georges R. Brandes; Robert P. Vaudo; David M. Keogh; Hueping Xu; Barbara E. Landini


Archive | 2001

Procédé permettant d'obtenir une qualité d'épitaxie améliorée (état de surface et densité par défaut) sur des substrats autoporteurs en nitrure (d'aluminium, indium, gallium) ((Al, In, Ga)N) pour dispositifs opto-électroniques et électroniques

Jeffrey S. Flynn; Georges R. Brandes; Robert P. Vaudo; David M. Keogh; Hueping Xu; Barbara E. Landini


Archive | 2001

Verfahren zur verbesserung der epitaxie-qualität (oberflächenstruktur und fehlstellen-dichte) in freistehenden (aluminium, indium, gallium) nitrid ((ai,in,ga)n) substraten für optoelektronische und elektronische bauelemente

Jeffrey S. Flynn; George R. Brandes; Robert P. Vaudo; David M. Keogh; Xueping Xu; Barbara E. Landini

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