Bea-Jane Lin Yang

Top‐imaged single‐layer resist process

A top‐imaged single‐layer resist (TISLR) process has been devised to make use of the different diffusion rates of organometallic compounds into the exposed and unexposed regions of a resist, so that latent patterns can be subsequently delineated in an oxygen plasma. The distinct chemical or physical properties of a resist in the exposed and unexposed areas bring about the different diffusion rates of the organometallic reagent. Notwithstanding that the bulk diffusion is easily achievable, a more versatile and high resolution yielding process can be realized provided that the diffusion is confined to the top‐surface layer alone. Both positive‐ and negative‐tone images have been realized with conventional photoresists according to the TISLR scheme. A few examples will be discussed to illustrate its features.