Bei Ye

Characterization of dislocation loops in CeO2 irradiated with high energy Krypton and Xenon

In order to fully characterize the structure of dislocation loops in CeO2, ion irradiations have been performed at 800u2009°C on CeO2 single-crystal thin films individually using 1u2009MeV Kr ions and 150u2009keV Xe ions, both to a dose of 5u2009×u20091014u2009ions/cm2. Post-irradiation TEM examination, diffraction contrast imaging and high-resolution transmission electron microscopy (HRTEM), has confirmed that the irradiation-induced dislocation loops in CeO2 were Frank loops, having an interstitial nature with {1u20091u20091} habit planes and a 1/3 Burgers vector. Dislocation loops were confirmed to be a stacking fault in nature through TEM observations of the interference fringes inside the loop periphery.

Simulation Of Ion Implantation Into Nuclear Materials And Comparison With Experiment

A new many‐body potential is proposed for pure molybdenum that consists of using ab initio and atomistic MD simulation methods verified against existing surface erosion experimental data. Mo is an important material for metallic U‐Mo alloys for using them in low‐enriched fuels. Several new Xe‐Mo potentials were also parameterized by comparing the calculated sputtering yield of a Mo‐surface bombarded with Xe ions with experimental data. Calculated results were also compared with defect distributions in CeO2 crystals obtained from experiments by 500 keV Xe implantation at the doses of 1×1017u2009ions/cm2 at several temperatures.