Ben Yu-Kuang Hu

STM-Induced Hydrogen Desorption via a Hole Resonance

We report STM-induced desorption of H from

Inelastic carrier lifetime in graphene

\mathrm{Si}\left(100\right)\ensuremath{-}\mathrm{H}\left(2\ifmmode\times\else\texttimes\fi{}1\right)

First-principles theory of inelastic currents in a scanning tunneling microscope

at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at

Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well

\ensuremath{-}7\mathrm{V}

Plasmon enhancement of Coulomb drag in double-quantum-well systems.

. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H

Density Dependent Exchange Contribution to ∂ μ / ∂ n and Compressibility in Graphene

5\ensuremath{\sigma}

LINEAR-RESPONSE THEORY OF COULOMB DRAG IN COUPLED ELECTRON SYSTEMS

hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at

COULOMB DRAG AS A PROBE OF COUPLED PLASMON MODES IN PARALLEL QUANTUM WELLS

\ensuremath{-}7\mathrm{V}

Magneto-Coulomb Drag: Interplay of Electron-Electron Interactions and Landau Quantization.

is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.

Density dependent exchange contribution to

We consider hot carrier inelastic scattering due to electron--electron interactions in graphene, as functions of carrier energy and density. We calculate the imaginary part of the zero-temperature quasiparticle self-energy for doped graphene, utlizing the