Bénédicte Warot-Fonrose

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

The authors report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2∕3Sr1∕3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferromagnetic spin structure of a BiFeO3 film to induce a sizable (∼60Oe) exchange bias on a ferromagnetic film of CoFeB at room temperature. Remarkably, the exchange bias effect is robust upon magnetic field cycling, with no indications of training.

Experimental application of sum rules for electron energy loss magnetic chiral dichroism

We present a derivation of the orbital and spin sum rules for magnetic circular dichroic spectra measured by electron energy loss spectroscopy in a transmission electron microscope. These sum rules are obtained from the differential cross section calculated for symmetric positions in the diffraction pattern. Orbital and spin magnetic moments are expressed explicitly in terms of experimental spectra and dynamical diffraction coefficients. We estimate the ratio of spin to orbital magnetic moments and discuss first experimental results for the Fe L2,3 edge.

On the strain coupling across vertical interfaces of switchable BiFeO3–CoFe2O4 multiferroic nanostructures

In magnetoelectrically coupled CoFe2O4–BiFeO3 nanostructures vertical and lateral lattice parameters of both phases are determined. We find that the in-plane lattice parameter of CoFe2O4 is fully relaxed whereas it presents compressive strain along the out-of-plane direction. Although the CoFe2O4–BiFeO3 interface is semicoherent, CoFe2O4 out-of-plane lattice strain is not relaxed after selective removal of the matrix and thus it is of nonelastic origin. In spite of the absence of elastic residual strain caused by CoFe2O4–BiFeO3 interfaces, the two phases are mechanically coupled as demonstrated by the electrical switching of the magnetization.

Solution Epitaxial Growth of Cobalt Nanowires on Crystalline Substrates for Data Storage Densities beyond 1 Tbit/in2

The implementation of nano-objects in numerous emerging applications often demands their integration in macroscopic devices. Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystalline metal surfaces. The nanowires form regular hexagonal arrays on unpatterned metallic films. These hybrid heterostructures present an important perpendicular magnetic anisotropy and pave the way to a high density magnetic recording device, with capacities above 10 Terabits/in(2). This method bypasses the need of assembling and orientating free colloidal nanocrystals on surfaces. Its generalization to other materials opens new perspectives toward many applications.

Enhancing the Reactivity of Al/CuO Nanolaminates by Cu Incorporation at the Interfaces

In situ deposition of a thin (∼5 nm) layer of copper between Al and CuO layers is shown to increase the overall nanolaminate material reactivity. A combination of transmission electron microscopy imaging, in situ infrared spectroscopy, low energy ion scattering measurements, and first-principles calculations reveals that copper spontaneously diffuses into aluminum layers (substantially less in CuO layers). The formation of an interfacial Al:Cu alloy with melting temperature lower than pure Al metal is responsible for the enhanced reactivity, opening a route to controlling the stochiometry of the aluminum layer and increasing the reactivity of the nanoenergetic multilayer systems in general.

Ultra-flat BaTiO3 epitaxial films on Si(001) with large out-of-plane polarization

Ferroelectric BaTiO3 is rarely used in monolithic Si devices due to the low quality of BaTiO3 films on Si, as polycrystallinity, degradation of bottom Pt electrodes, low polarization, and high roughness. Here, we overcome these limitations by using a buffer structure that combines yttria-stabilized zirconia, CeO2, and conducting LaNiO3. BaTiO3 films on the multilayered buffer, with total thickness of the buffer below 100 nm, are epitaxial, display remnant polarization of 6–10 μC/cm2, and have roughness of a few A. These unprecedented properties pave the way to integrate ferroelectric BaTiO3 into Si platforms.

Magnetic Configurations in Co/Cu Multilayered Nanowires: Evidence of Structural and Magnetic Interplay

Off-axis electron holography experiments have been combined with micromagnetic simulations to study the remnant magnetic states of electrodeposited Co/Cu multilayered nanocylinders. Structural and chemical data obtained by transmission electron microscopy have been introduced in the simulations. Three different magnetic configurations such as an antiparallel coupling of the Co layers, coupled vortices, and a monodomain-like state have been quantitatively mapped and simulated. While most of the wires present the same remnant state whatever the direction of the saturation field, we show that some layers can present a change from an antiparallel coupling to vortices. Such a configuration can be of particular interest to design nano-oscillators with two different working frequencies.

Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)

Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17%) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (111) out-of-plane orientation and coexistence of A- and B-type in-plane crystal variants. CFO films have low roughness of 4 A and saturation magnetization of about 300 emu/cm3. These properties make CFO films on Sc2O3-buffered Si(111) comparable to those grown on oxide single crystals and thus extend the possibilities of using spinel oxides in electronic devices.

Magnetism of CoFe2O4 ultrathin films on MgAl2O4 driven by epitaxial strain

We report on the correlations between magnetic anisotropy and strain state in CoFe2O4 ultrathin films grown on MgAl2O4(100) and MgAl2O4(111) substrates. By local strain analysis using the geometric phase method, a significant in-plane compressive strain is observed for the (001) orientation while a full relaxation is detected for the (111) orientation. The relaxation process in CoFe2O4(111) layers induces interface dislocations and a large amount of antiphase boundaries while a pseudomorphic growth is observed for the (001) direction, decreasing significantly the density of antiphase boundaries. By comparing the magnetoelastic energy terms, the correlation between strain state and resultant magnetization is discussed.

Energy-loss magnetic chiral dichroism (EMCD): Magnetic chiral dichroism in the electron microscope

A new technique called energy-loss magnetic chiral dichroism (EMCD) has recently been developed [P. Schattschneider, et al. Nature 441, 486 (2006)] to measure magnetic circular dichroism in the transmission electron microscope (TEM) with a spatial resolution of 10 nm. This novel technique is the TEM counterpart of x-ray magnetic circular dichroism, which is widely used for the characterization of magnetic materials with synchrotron radiation. In this paper we describe several experimental methods that can be used to measure the EMCD signal [P. Schattschneider, et al. Nature 441, 486 (2006); C. Hebert, et al. Ultramicroscopy 108(3), 277 (2008); B. Warot-Fonrose, et al. Ultramicroscopy 108(5), 393 (2008); L. Calmels, et al. Phys. Rev. B 76, 060409 (2007); P. van Aken, et al. Microsc. Microanal. 13(3), 426 (2007)] and give a review of the recent improvements of this new investigation tool. The dependence of the EMCD on several experimental conditions (such as thickness, relative orientation of beam and sample, collection and convergence angle) is investigated in the transition metals iron, cobalt, and nickel. Different scattering geometries are illustrated; their advantages and disadvantages are detailed, together with current limitations. The next realistic perspectives of this technique consist of measuring atomic specific magnetic moments, using suitable spin and orbital sum rules, [L. Calmels, et al. Phys. Rev. B 76, 060409 (2007); J. Rusz, et al. Phys. Rev. B 76, 060408 (2007)] with a resolution down to 2 to 3 nm.