Benjamin A. Griffin

Acoustic waveguiding in a silicon carbide phononic crystals at microwave frequencies

Two dimensional SiC–air phononic crystals have been modeled, fabricated, and tested with a measured bandgap ranging from 665 to 693u2009MHz. Snowflake air inclusions on a hexagonal lattice were used for the phononic crystal. By manipulating the phononic crystal lattice and inserting circular inclusions, a waveguide was created at 680u2009MHz. The combined insertion loss and propagation loss for the waveguide is 8.2u2009dB, i.e., 39% of the energy is guided due to the high level of the confinement afforded by the phononic crystal. The SiC–air phononic crystals and waveguides were fabricated using a CMOS-compatible process, which allows for seamless integration of these devices into wireless communication systems operating at microwave frequencies.

Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.

Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. This work describes 12.5% ScAl single target reactive sputter deposition process and establishes a direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. This work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. This work describes 12.5% ScAl single target reactive sputter deposition process and establishes a direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to c...

Sc x Al 1−x N film evaluation using contour mode resonators

Recent literature has focused on improving piezoelectric coupling coefficients by alloying aluminum nitride (AlN) with scandium (Sc). Akiyama et al. showed the highest piezoelectric coefficient increase of nearly four times for a 41% Sc substitution for Al. Thus far, studies mainly focus on material measurements such as x-ray diffraction or piezoelectric constants to assess the material quality. Although these measurements are useful to assess the improvement in the piezoelectric performance of the material, they do not address changes in the coupling coefficient and quality factor. Resonator structures are needed to directly extract these key performance parameters for film assessment. Fabrication integration, however, must be minimized to avoid obscuring film performance by extrinsic device effects. In this work, we assess a film evaluation tool using contour mode resonators (CMRs) to directly extract resonator performance for film comparison. Resonators formed from AlN, Sc0.06Al0.94N, and Sc0.125Al0.875N films are compared to demonstrate the method.

Sc(0.06)Al(0.94)N film evaluation using contour mode resonators

Recent literature has focused on improving piezoelectric coupling coefficients by alloying aluminum nitride (AlN) with scandium (Sc). Akiyama et al. showed the highest d_33 piezoelectric coefficient increase of >4x at a 41% Sc substitution for Al. Thus far, studies mainly focus on material measurements such as x-ray diffraction or piezoelectric constants to assess the material quality. Although these measurements are useful to assess the improvement in the piezoelectric performance of the material, they do not address improvements in the figure-of-merit (FOM) of resonators (i.e., coupling coefficient times quality factor). Resonator structures are needed to directly extract these key performance parameters for film assessment. Fabrication integration, however, must be minimized to avoid obscuring film performance by extrinsic device effects.

Development of an aluminum nitride-silicon carbide material set for high-temperature sensor applications

A number of important energy and defense-related applications would benefit from sensors capable of withstanding extreme temperatures (>300°C). Examples include sensors for automobile engines, gas turbines, nuclear and coal power plants, and petroleum and geothermal well drilling. Military applications, such as hypersonic flight research, would also benefit from sensors capable of 1000°C. Silicon carbide (SiC) has long been recognized as a promising material for harsh environment sensors and electronics because it has the highest mechanical strength of semiconductors with the exception of diamond and its upper temperature limit exceeds 2500°C, where it sublimates rather than melts. Yet today, many advanced SiC MEMS are limited to lower temperatures because they are made from SiC films deposited on silicon wafers. Other limitations arise from sensor transduction by measuring changes in capacitance or resistance, which require biasing or modulation schemes that can with- stand elevated temperatures. We are circumventing these issues by developing sensing structures directly on SiC wafers using SiC and piezoelectric aluminum nitride (AlN) thin films. SiC and AlN are a promising material combination due to their high thermal, electrical, and mechanical strength and closely matched coefficients of thermal expansion. AlN is also a non-ferroelectric piezoelectric material, enabling piezoelectric transduction at temperatures exceeding 1000°C. In this paper, the challenges of incorporating these two materials into a compatible MEMS fabrication process are presented. The current progress and initial measurements of the fabrication process are shown. The future direction and the need for further investigation of the material set are addressed.

Development of MEMS photoacoustic spectroscopy

After years in the field, many materials suffer degradation, off-gassing, and chemical changes causing build-up of measurable chemical atmospheres. Stand-alone embedded chemical sensors are typically limited in specificity, require electrical lines, and/or calibration drift makes data reliability questionable. Along with size, these Achilles’ heels have prevented incorporation of gas sensing into sealed, hazardous locations which would highly benefit from in-situ analysis. We report on development of an all-optical, mid-IR, fiber-optic based MEMS Photoacoustic Spectroscopy solution to address these limitations. Concurrent modeling and computational simulation are used to guide hardware design and implementation.

High Temperature Microelectromechanical Systems Using Piezoelectric Aluminum Nitride.

We report on the efforts at Sandia National Laboratories to develop high temperature capable microelectromechanical systems (MEMS). MEMS transducers are pervasive in todays culture, with examples found in cell phones, automobiles, gaming consoles, and televisions. There is currently a need for MEMS transducers that can operate in more harsh environments, such as automobile engines, gas turbines, nuclear and coal power plants, and petroleum and geothermal well drilling. Our development focuses on the coupling of silicon carbide (SiC) and aluminum nitride (AlN) thin films on SiC wafers to form a MEMS material set capable of temperatures beyond 1000°C. SiC is recognized as a promising material for high temperature capable MEMS transducers and electronics because it has the highest mechanical strength of semiconductors with the exception of diamond and its upper temperature limit exceeds 2500°C, where it sublimates rather than melts. Most transduction schemes in SiC are focused on measuring changes in capaci...