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Featured researches published by Benjamin Li.


Journal of Lightwave Technology | 1998

Gigabyte/s parallel fiber-optic links based on edge emitting laser diode arrays

Radhakrishnan Nagarajan; WeiJian Sha; Benjamin Li; Richard R. Craig

We present a ten-channel parallel fiber optic link consisting of a transmitter based on an edge emitting laser diode array operating nominally at 1 /spl mu/m wavelength and a complementary receiver based on an InGaAs pin photodetector array. We demonstrate fiber optic link performance up to data rates of 1 Gb/s per channel with low skew at measurement time limited bit error rates lower than 10/sup -11/ over 100 m of multimode fiber ribbon cable. The transmitter is operational, with very clear eye opening, up to baseplate temperatures of 105/spl deg/C.


High-power lasers and applications | 1998

High-power high-speed single-mode diode lasers for optical intersatellite link applications

Benjamin Li; WeiJian Sha; PingHui Sophia Yeh; Radhakrishnan Nagarajan; Richard R. Craig

High power single-mode AlGaAs semiconductor lasers operating between 820 nm and 860 nm (SDL-5400 series diodes) have been successfully qualified for deployment in many free-space inter-satellite communication link programs. Traditionally these high power devices did not have sufficient bandwidth for direct high speed modulation because of large device and package parasitics. We have improved the device parasitics of the SDL-5430 laser diode, i.e. reduced the RC product, from 240 ps to about 40 ps. The initial measurements indicate that this device (SDL-5480) is suitable for high power optical inter-satellite link (OISL) applications at data rates greater than 1 Gbit/s. The preliminary life test indicates that the new device has better a reliability than the previous design.


International Symposium on Optoelectronics in Computers, Communications, and Control | 1992

Reliability of high-power semiconductor laser arrays

Hsing H. Kung; Richard R. Craig; Erik Zucker; Benjamin Li; Donald R. Scifres

The reliability of continuously operating (cw) high power laser arrays is a critical factor for the acceptance of these devices in a wide range of applications. Extensive investigation into the reliability of semiconductor lasers has led to an improved understanding of failure mechanisms such as material defects, mirror damage and solder related failures as well as to methods which significantly suppress the occurrence of catastrophic failure. Furthermore, as a result of material quality improvements, laser arrays exhibit very low gradual degradation for high power operation up to 2 Watts cw. Long term lifetest data shows that the projected medium life at room temperature of such devices exceed 100,000 hours at 2 W cw.


High-power lasers and applications | 1998

Performance and reliability of high-power multimode lasers between 0.8 and 1 μm

Benjamin Li; Gary L. Harnagel; Richard R. Craig

High power multi-mode semiconductor lasers operating between 1 Watt and 2 Watts are widely used for pumping solid-state lasers, active fibers and direct materials processing. In this paper, we present the high power and high temperature performance characteristics of 100 micrometer aperture broad area lasers. In addition, we will present lifetest data that supports mean lifetimes in excess of 500,000 hours for this class of lasers. 1


electronic components and technology conference | 1997

Gigabit parallel fiber optic link based on edge emitting lasers

Radhakrishnan Nagarajan; Wei Jian Sha; Benjamin Li; Peter Braid; Robert J. Furmanak; Joseph E. Marchegiano; Bruce L. Booth

We present a 10 channel parallel fiber optic link consisting of a transmitter based on an edge emitting laser diode array operating at 980 nm and a complementary receiver based on an InGaAs pin photodetector array. We demonstrate link performance up to data rates of 1 Gbit/s with measurement time limited bit errors rates lower than 10/sup -11/ over 100 m of multi-mode fiber ribbon cable.


optical fiber communication conference | 1997

Performance and reliability of high-power lasers between 900-990 nm

Benjamin Li; Ross Parke; Gordon S. Jackson; Richard R. Craig

In conclusion, 100-/spl mu/m broad area InGaAs quantum well lasers for fibre laser pumping with peak cw power exceeding 8 W and high power operating up to 90/spl deg/C have been demonstrated. Preliminary lifetest data suggest that reliable 100-/spl mu/m broad area lasers are possible for power between 1/spl sim/2 watts. These lasers will fulfill the lifetime demand of telecommunication applications because of generous power and temperature margins.


Proceedings of SPIE, the International Society for Optical Engineering | 1996

Uncooled high-temperature (130C) operation of single-mode packaged fiber optic transmitter and receiver at 1.2 GBit/s

Radhakrishnan Nagarajan; Robert A. Marsland; Benjamin Li; Renato Dato; Paul C. Wen; Peter Braid; Kenneth M. Dzurko; Richard R. Craig

We review data on the high temperature operation of a high speed data link operating at 1 micrometer wavelength. The single mode fiber packaged transmitter consists of an uncooled high speed laser diode packaged with a commercial laser driver chip and operates at data rates up to 1.2 Gbit/s. The single mode fiber packaged receiver consists of a high speed photodiode packaged with a combination of a commercial transimpedance amplifier and a limiting amplifier. The link operates with high stability and very low error rates without an optical isolator. The maximum data rate and the minimum link sensitivity are currently limited by the electronic component design.


Free-Space Laser Communication Technologies VI | 1994

Laser qualification for the Semiconductor Laser Intersatellite Link Experiment (SILEX) program

Richard R. Craig; Benjamin Li; Benny Chan

The SDL-5400 series commercial AlGaAs laser diode was characterized and screened for potential use as communication laser in the SILEX program. The lasers were initially tested through environmental extremes and for vacuum reliability to obtain preliminary indications that the laser was suitable to the requirement. Potential flight lasers were then built and screened for use. Endurance testing of samples from the potential flight lot has been completed.


Laser-Induced Damage in Optical Materials: 1997 | 1998

Reliability and degradation characteristics of semiconductor AlGaAs-based diode lasers operating between ~ 0.81 and 1.0 mm

Stephen O'Brien; Erik P. Zucker; Benjamin Li; Hanmin Zhao

High power diode lasers are important for a variety of applications including diode-pumped (DP) solid state lasers, DP fiber lasers/amplifiers and a variety of printing and medical applications. Recently, there have been significant advances in the maximum cw powers achieved from both multimode and singlemode lasers in both AlGaAs-based and InGaAsP- based materials. The highest powers from broad area lasers have been achieved with high quality AlGaAs-based materials. For example, cw powers of 11.3 and 16.5 W have been demonstrated at 870 nm from 100 and 200 micrometers wide apertures, respectively. These power levels correspond to a facet loading of 80-110 mW/micrometers and facet power densities of 27 MW/cm2 which are approximately 2-fold higher than previously reported results. In this paper we report on the performance, reliability and degradation characteristics of AlGaAs- based lasers.


High-speed semiconductor lasers for communication. Conference | 1997

10-channel, 1 Gb/s, parallel fiber optic data link using 980-nm edge emitting laser diode arrays

Radhakrishnan Nagarajan; WeiJian Sha; Benjamin Li; Peter Braid; Robert J. Furmanak; Joseph E. Marchegiano; Bruce L. Booth

We present a 10 channel parallel fiber optic link consisting of a transmitter based on an edge emitting laser diode array operating at 980 nm and a complementary receiver based on an InGaAs pin photodetector array. We demonstrate link performance up to data rates of 1 Gbit/s with measurement time limited bit errors rates lower than 10-11 over 100 m of multi-mode fiber ribbon cable.

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