Benjamin Sacépé

Gate-tuned normal and superconducting transport at the surface of a topological insulator

Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting junctions fabricated on thin Bi2Se3 single crystals, equipped with a gate electrode. In the presence of perpendicular magnetic field B, sweeping the gate voltage enables us to observe the filling of the Dirac fermion Landau levels, whose character evolves continuously from electron- to hole-like. When B=0, a supercurrent appears, whose magnitude can be gate tuned, and is minimum at the charge neutrality point determined from the Landau level filling. Our results demonstrate how gated nano-electronic devices give control over normal and superconducting transport of Dirac fermions at an individual surface of a three-dimensional topological insulators.

Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces.

We report on a study of magnetotransport in LaAlO3 /SrTiO3 interfaces characterized by mobilities of the order of several thousands cm2/V s. We observe Shubnikov-de Haas oscillations whose period depends only on the perpendicular component of the magnetic field. This observation directly indicates the formation of a two-dimensional electron gas originating from quantum confinement at the interface. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass m* ≃ 1.45 m(e). An electric field applied in the back-gate geometry increases the mobility, the carrier density, and the oscillation frequency.

Disorder-induced inhomogeneities of the superconducting state close to the superconductor-insulator transition.

Scanning tunneling spectroscopy at very low temperatures on homogeneously disordered superconducting titanium nitride thin films reveals strong spatial inhomogeneities of the superconducting gap Delta in the density of states. Upon increasing disorder, we observe suppression of the superconducting critical temperature Tc towards zero, enhancement of spatial fluctuations in Delta, and growth of the Delta/Tc ratio. These findings suggest that local superconductivity survives across the disorder-driven superconductor-insulator transition.

Localization of preformed Cooper pairs in disordered superconductors

Disorder leads to localization of electrons at low temperatures, changing metals to insulators. In a superconductor the electrons are paired up, and scanning tunnelling microscopy shows that the pairs localize together rather than breaking up and forming localized single electrons in the insulating state.

Magnetotransport through graphene nanoribbons

We investigate magnetotransport through graphene nanoribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase in the conductance on a scale of a few tesla. This phenomenon is accompanied by a decrease in the energy scales associated to charging effects, and to hopping processes probed by temperature-dependent measurements. All the observations can be interpreted consistently in terms of strong-localization effects caused by the large disorder present, and exclude that the insulating state observed in nanoribbons can be explained solely in terms of a true gap between valence and conduction bands.

Pseudogap in a thin film of a conventional superconductor

A superconducting state is characterized by the gap in the electronic density of states, which vanishes at the superconducting transition temperature T(c). It was discovered that in high-temperature superconductors, a noticeable depression in the density of states, the pseudogap, still remains even at temperatures above T(c). Here, we show that a pseudogap exists in a conventional superconductor, ultrathin titanium nitride films, over a wide range of temperatures above T(c). Our study reveals that this pseudogap state is induced by superconducting fluctuations and favoured by two-dimensionality and by the proximity to the transition to the insulating state. A general character of the observed phenomenon provides a powerful tool to discriminate between fluctuations as the origin of the pseudogap state and other contributions in the layered high-temperature superconductor compounds.

Tunneling spectroscopy and vortex imaging in boron-doped diamond.

We present the first scanning tunneling spectroscopy study of single-crystalline boron-doped diamond. The measurements were performed below 100 mK with a low temperature scanning tunneling microscope. The tunneling density of states displays a clear superconducting gap. The temperature evolution of the order parameter follows the weak-coupling BCS law with Delta(0)/kBTc approximately 1.74. Vortex imaging at low magnetic field also reveals localized states inside the vortex core that are unexpected for such a dirty superconductor.

Metal-to-insulator transition and superconductivity in boron-doped diamond

The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron–phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon.

Superconducting diamagnetic fluctuations in ropes of carbon nanotubes

We report low-temperature magnetisation measurements on a large number of purified ropes of single wall carbon nanotubes. In spite of a large superparamagnetic contribution due to the small ferromagnetic catalytical particles still present in the sample, at low temperature (

Niobium-based superconducting nano-device fabrication using all-metal suspended masks

T<0.5K