Benoit Corraze

Localization, Coulomb interactions, and electrical heating in single-wall carbon nanotubes/polymer composites

Low-field and high-field transport properties of carbon nanotubes/polymer composites are investigated for different tube fractions. Above the percolation threshold

Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators

{f}_{c}\ensuremath{\sim}0.33%,

Electric‐Pulse‐driven Electronic Phase Separation, Insulator–Metal Transition, and Possible Superconductivity in a Mott Insulator

transport is due to hopping of localized charge carriers with a localization length

Resistive switching at the nanoscale in the Mott insulator compound GaTa4Se8.

\ensuremath{\xi}\ensuremath{\sim}10\ensuremath{-}30 \mathrm{nm}.

First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8.

Coulomb interactions associated with a soft gap

Ultrafast Formation of a Charge Density Wave State in 1T-TaS_{2}: Observation at Nanometer Scales Using Time-Resolved X-Ray Diffraction.

{\ensuremath{\Delta}}_{\mathrm{CG}}\ensuremath{\sim}2.5 \mathrm{meV}

P-type transparent conductors Sr1−xNaxFCuS and SrF1−xOxCuS: design, synthesis and physical properties

are present at low temperature close to

Avalanche breakdown in GaTa4Se8−xTex narrow-gap Mott insulators

{f}_{c}.

Electric Transport Properties and Percolation in Carbon Nanotubes / PMMA Composites

We argue that it originates from the Coulomb charging energy effect which is partly screened by adjacent bundles. The high-field conductivity is described within an electrical heating scheme. All the results suggest that using composites close to the percolation threshold may be a way to access intrinsic properties of the nanotubes by experiments at a macroscopic scale.

Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications

A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.