Bentley N. Scott

Octave band varactor-tuned GaAs FET oscillators

A varactor-tuned 7.3-15.6GHz GaAs FET oscillator, with 4mW output power, will be discussed. Hyperabrupt GaAs tuning varactors were used in the gate and source networks.

A Family of Four Monolithic VCO MIC's Covering 2-18 GHz

Four GaAs monolithic voltage controlled oscillator chips were designed and fabricated which cover the 2-4 GHz, 4-7 GHz, 7-12 GHz, and 12-18 GHz bands. Minimum output power of the four bands was +12 dBm in the 12-18 GHz band with a maximum output power of +20 dBm in the 7-12 GHz band. Typical power flatness was +-5 dBm in any band. The monolithic chips include a FET, two varactors, gate and source inductors, bypass capacitors, and bias resistors. The paper will discuss design considerations and performance.

X-band GaAs monolithic voltage controlled oscillator

A monolithic 8.8-10GHz GaAs FET voltage-controlled oscillator, with the MESFET, tuning varactors, bypass capacitors, tuning inductors and isolation resistors, fully integrated on a single 1.1mm × 1.2mm chip, will be covered.

Fabrication Techniques for X-Band Monolithic VCOs

Monolithic GaAs FET VCOs have been designed and fabricated utilizing a submicron-gate FET, wide-capacitance-ratio varactor diodes, MIM capacitors, microstripline inductors, resistors and air-bridge interconnections on a single GaAs chip. Design considerations and fabrication techniques for each of these components are given.

A GaAs monolithic voltage controlled oscillator

A monolithic voltage-controlled oscillator covering the 11.5- 20.0GHz band continuously, with an average power output of + 12.8dBm, will be described. A (1.1 × 1.3)mm2chip contains a 300μm wide FET, RF bypass capacitors, gate and source inductors and two planar high capacitance ratio varactors.

GaAs switched geometry oscillator for X and Ku bands

A single oscillator circuit using an FET pair with RF coupled, dc isolated gates, which is capable of operating at two widely separated but selectable frequencies, will be presented. Unswitched, the oscillations are at 200GHz, and when the second FET is pinched off, the output frequency changes to 12.5GHz.