Beom-Goo Kang

Structural and Electrical Characterization of a Block Copolymer‐Based Unipolar Nonvolatile Memory Device

Electronic devices based on a series of synthesized block copolymers are demonstrated. In particular, a block copolymer system with a lamellar structure exhibits unipolar switching behavior. This study provides a simple strategy based on the adjustment of the block ratio in block copolymers to control the polymer morphology and thus the electrical and switching properties of polymer-based memory devices.

Thermally cross-linkable hole transporting polymer synthesized by living anionic polymerization for effective electron blocking and reduction of exciton quenching in multilayer polymer light emitting diodes

A new cross-linkable polymer (d-PBAB), which has triphenylamine as the hole transporting moiety and ethynyl group as the thermal cross-linker, was synthesized by a living anionic polymerization and deprotection process. The thermally cross-linked d-PBAB layer had a smooth surface and excellent solvent resistance. The PLED fabricated with cross-linked d-PBAB as hole transporting layer (HTL) showed approximately one and half times higher luminance and four times higher luminous efficiency than those obtained from PLED with PEDOT:PSS. This is ascribed to better abilities of cross-linked d-PBAB to block electrons and prevent exciton quenching than those of PEDOT:PSS at the emitting layer (EML) interface. These results strongly suggested that cross-linked d-PBAB can be a promising material to replace conventional PEDOT:PSS.