Bernard Doudin

Magnetoelectronics with magnetoelectrics

Magnetoelectric films are proposed as key components for spintronic applications. The net magnetic moment created by an electric field in a magnetoelectric thin film influences the magnetization state of a neighbouring ferromagnetic layer through exchange coupling. Pure electrical control of magnetic configurations of giant magnetoresistance spin valves and tunnelling magnetoresistance elements is therefore achievable. Estimates based on documented magnetoelectric tensor values show that exchange fields reaching 100 mT can be obtained. We propose a mechanism alternative to current-induced magnetization switching, providing access to a wide range of device impedance values and opening the possibility of simple logic functions.

Light-triggered self-construction of supramolecular organic nanowires as metallic interconnects

The construction of soft and processable organic material able to display metallic conduction properties-a large density of freely moving charges-is a major challenge for electronics. Films of doped conjugated polymers are widely used as semiconductor devices, but metallic-type transport in the bulk of such materials remains extremely rare. On the other hand, single-walled carbon nanotubes can exhibit remarkably low contact resistances with related large currents, but are intrinsically very difficult to isolate and process. Here, we describe the self-assembly of supramolecular organic nanowires between two metallic electrodes, from a solution of triarylamine derivative, under the simultaneous action of light and electric field triggers. They exhibit a combination of large conductivity values (>5 × 10(3) S m(-1)) and a low interface resistance (<2 × 10(-4) Ω m). Moreover, the resistance of nanowires in series with metal interfaces systematically decreases when the temperature is lowered to 1.5 K, revealing an intrinsic metallic behaviour.

Conductivity in organic semiconductors hybridized with the vacuum field.

Much effort over the past decades has been focused on improving carrier mobility in organic thin-film transistors by optimizing the organization of the material or the device architecture. Here we take a different path to solving this problem, by injecting carriers into states that are hybridized to the vacuum electromagnetic field. To test this idea, organic semiconductors were strongly coupled to plasmonic modes to form coherent states that can extend over as many as 10(5) molecules and should thereby favour conductivity. Experiments show that indeed the current does increase by an order of magnitude at resonance in the coupled state, reflecting mostly a change in field-effect mobility. A theoretical quantum model confirms the delocalization of the wavefunctions of the hybridized states and its effect on the conductivity. Our findings illustrate the potential of engineering the vacuum electromagnetic environment to modify and to improve properties of materials.

Characterization of the native Cr2O3 oxide surface of CrO2

Using photoemission and inverse photoemission, we have been able to characterize the Cr2O3 oxide surface of CrO2 thin films. The Cr2O3 surface oxide exhibits a band gap of about 3 eV, although the bulk CrO2 is conducting. The thickness of this insulating Cr2O3 layer is twice the photoelectron escape depth which is about 2 nm thick. The effective Cr2O3 surface layer Debye temperature, describing motion normal to the surface, is about 370 K. From a comparison of CrO2 films grown by different techniques, with different Cr2O3 content, evidence is provided that the CrO2 may polarize the Cr2O3.

ARRAYS OF MULTILAYERED NANOWIRES (INVITED)

Multilayered Co/Cu wires with a diameter of 80 nm and a length of 6 μm were produced by electrodeposition in nanoporous polycarbonate membranes. Their magnetoresistance has been measured in a geometry where the current was perpendicular to the layer plane. The anisotropic part of the magnetoresistance was limited to 1.5%. The study, for layer thicknesses ranging from 3 to 100 nm interpreted in terms of the Valet and Fert model, gave estimates of the spin dependent bulk and interface resistivities and their change with temperature. The large Co bulk resistivity value, caused by a large amount of Cu impurities, limited the magnetoresistance in our samples to 20% at room temperature and 30% at 20 K. The Cu spin flip mean free path was found to be temperature independent and determined by scattering at Co impurities in the Cu layer. It was measured for two sets of samples with different amounts of Co impurities.

Electrically controlled exchange bias for spintronic applications

Exchange coupling between a magnetoelectric (111)-oriented Cr2O3 single crystal and a CoPt multilayer with perpendicular anisotropy exhibits an exchange bias field proportional to the applied axial electric field. Extrapolation from bulk to thin film magnetoelectric pinning system suggests promising spintronic applications due to coupling between the electric field-controlled magnetization and the magnetization of a neighbor ferromagnetic layer. Pure voltage control of magnetic configurations of tunneling magnetoresistance spin valves is an attractive alternative to current-induced magnetization switching.

Quantized magnetoresistance in atomic-size contacts.

When the dimensions of a metallic conductor are reduced so that they become comparable to the de Broglie wavelengths of the conduction electrons, the absence of scattering results in ballistic electron transport and the conductance becomes quantized. In ferromagnetic metals, the spin angular momentum of the electrons results in spin-dependent conductance quantization and various unusual magnetoresistive phenomena. Theorists have predicted a related phenomenon known as ballistic anisotropic magnetoresistance (BAMR). Here we report the first experimental evidence for BAMR by observing a stepwise variation in the ballistic conductance of cobalt nanocontacts as the direction of an applied magnetic field is varied. Our results show that BAMR can be positive and negative, and exhibits symmetric and asymmetric angular dependences, consistent with theoretical predictions.

Spin transition in arrays of gold nanoparticles and spin crossover molecules.

We investigate if the functionality of spin crossover molecules is preserved when they are assembled into an interfacial device structure. Specifically, we prepare and investigate gold nanoparticle arrays, into which room-temperature spin crossover molecules are introduced, more precisely, [Fe(AcS-BPP)2](ClO4)2, where AcS-BPP = (S)-(4-{[2,6-(dipyrazol-1-yl)pyrid-4-yl]ethynyl}phenyl)ethanethioate (in short, Fe(S-BPP)2). We combine three complementary experiments to characterize the molecule-nanoparticle structure in detail. Temperature-dependent Raman measurements provide direct evidence for a (partial) spin transition in the Fe(S-BPP)2-based arrays. This transition is qualitatively confirmed by magnetization measurements. Finally, charge transport measurements on the Fe(S-BPP)2-gold nanoparticle devices reveal a minimum in device resistance versus temperature, R(T), curves around 260-290 K. This is in contrast to similar networks containing passive molecules only that show monotonically decreasing R(T) characteristics. Backed by density functional theory calculations on single molecular conductance values for both spin states, we propose to relate the resistance minimum in R(T) to a spin transition under the hypothesis that (1) the molecular resistance of the high spin state is larger than that of the low spin state and (2) transport in the array is governed by a percolation model.

Distance dependence of the energy transfer rate from a single semiconductor nanostructure to graphene.

The near-field Coulomb interaction between a nanoemitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, (i) zero-dimensional CdSe/CdS nanocrystals and (ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing distances d, the energy transfer rate from individual nanocrystals to graphene decays as 1/d(4). In contrast, the distance dependence of the energy transfer rate from a two-dimensional nanoplatelet to graphene deviates from a simple power law but is well described by a theoretical model, which considers a thermal distribution of free excitons in a two-dimensional quantum well. Our results show that accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers and that energy transfer allows probing dimensionality effects at the nanoscale.

Oxidation of metals at the chromium oxide interface

Metal thin-film deposition, over the Cr2O3 surface of CrO2 thin-film substrates, exhibits a redox reaction at the interface. The transition metal forms an oxide in combination with the reduction of the near-surface chromium oxide to Cr2O3. The insulating barrier layer Cr2O3 increases with the formation of Pb3O4 in Pb/Cr2O3/CrO2 and CoO in Co/Cr2O3/CrO2 junctions, respectively.