Bernard R. Matis

Surface Doping and Bandgap Tunability in Hydrogenated Graphene

We report the first observation of the n-type nature of hydrogenated graphene on SiO(2) and demonstrate the conversion of the majority carrier type from electrons to holes using surface doping. Density functional calculations indicate that the carrier type reversal is directly related to the magnitude of the hydrogenated graphenes work function relative to the substrate, which decreases when adsorbates such as water are present. Additionally, we show by temperature-dependent electronic transport measurements that hydrogenating graphene induces a band gap and that in the moderate temperature regime [220-375 K], the band gap has a maximum value at the charge neutrality point, is tunable with an electric field effect, and is higher for higher hydrogen coverage. The ability to control the majority charge carrier in hydrogenated graphene, in addition to opening a band gap, suggests potential for chemically modified graphene p-n junctions.

Hydrogenation and Fluorination of Graphene Models: Analysis via the Average Local Ionization Energy

We have investigated the use of the average local ionization energy, I[combining overline](S)(r), as a means for rapidly predicting the relative reactivities of different sites on two model graphene surfaces toward the successive addition of one, two, and three hydrogen or fluorine atoms. The I[combining overline](S)(r) results were compared with directly computed interaction energies, at the B3LYP/6-311G(d,p) level. I[combining overline](S)(r) correctly predicts that the edges of graphene sheets are more reactive than the interior portions. It shows that added hydrogens activate the adjoining (ortho) sites and deactivate those that are separated by one site (meta). Overall, I[combining overline](S)(r) is effective for rapidly (single calculations) estimating the relative site reactivities of these large systems, although it reflects only the system prior to an interaction and cannot take into account postinteraction factors, e.g., structural distortion.

Electronic Transport in Bilayer MoS2 Encapsulated in HfO2

The exact nature of the interface between a two-dimensional crystal and its environment can have a significant impact on the electronic transport within the crystal, and can place fundamental limitations on transistor performance and long-term functionality. Two-dimensional transition-metal dichalcogenides are a new class of transistor channel material with electronic properties that can be tailored through dielectric engineering of the material/environmental interface. Here, we report electrical transport measurements carried out in the insulating regime of bilayer molybdenum disulfide, which has been encapsulated within a high-κ hafnium oxide dielectric. Temperature- and carrier-density-dependent measurements show that for T < 130 K the transport is governed by resonant tunneling, and at T = 4.2 K the tunneling peak lineshape is well-fitted by a Lorentzian with an amplitude less than e2/h. Estimates of tunneling time give τ ∼ 1.2 ps corresponding to a frequency f ∼ 0.84 THz. The tunneling processes are observable up to T ∼ 190 K (more than a factor of 6 higher than that previously reported for MoS2 on SiO2) despite the onset of variable range hopping at T ∼ 130 K, demonstrating the coexistence of the two transport processes within the same temperature range. At constant temperature, varying the Fermi energy allows experimental access to each transport process. The results are interpreted in terms of an increase in charge carrier screening length and a decrease in electron-phonon coupling induced by the hafnium oxide. Our results represent the first demonstration of the intermediate tunneling-hopping transport regime in a two-dimensional material. The results suggest that interface engineering may be a macroscopic tool for controlling quantum transport within such materials as well as for increasing the operating temperatures for resonant-tunneling devices derived from such materials, with applications in high-frequency electronics and logic devices.

Evidence for Spin Glass Ordering Near the Weak to Strong Localization Transition in Hydrogenated Graphene.

We provide evidence that magnetic moments formed when hydrogen atoms are covalently bound to graphene exhibit spin glass ordering. We observe logarithmic time-dependent relaxations in the remnant magnetoresistance following magnetic field sweeps, as well as strong variances in the remnant magnetoresistance following field-cooled and zero-field-cooled scenarios, which are hallmarks of canonical spin glasses and provide experimental evidence for the hydrogenated graphene spin glass state. Following magnetic field sweeps, and over a relaxation period of several minutes, we measure changes in the resistivity that are more than 3 orders of magnitude larger than what has previously been reported for a two-dimensional spin glass. Magnetotransport measurements at the Dirac point, and as a function of hydrogen concentration, demonstrate that the spin glass state is observable as the zero-field resistivity reaches a value close to the quantum unit h/2e(2), corresponding to the point at which the system undergoes a transition from weak to strong localization. Our work sheds light on the critical magnetic-dopant density required to observe spin glass formation in two-dimensional systems. These findings have implications to the basic understanding of spin glasses as well the fields of two-dimensional magnetic materials and spintronics.

Energy Dissipation Pathways in Few-Layer MoS 2 Nanoelectromechanical Systems

Free standing, atomically thin transition metal dichalcogenides are a new class of ultralightweight nanoelectromechanical systems with potentially game-changing electro- and opto-mechanical properties, however, the energy dissipation pathways that fundamentally limit the performance of these systems is still poorly understood. Here, we identify the dominant energy dissipation pathways in few-layer MoS2 nanoelectromechanical systems. The low temperature quality factors and resonant frequencies are shown to significantly decrease upon heating to 293 K, and we find the temperature dependence of the energy dissipation can be explained when accounting for both intrinsic and extrinsic damping sources. A transition in the dominant dissipation pathways occurs at T ~ 110 K with relatively larger contributions from phonon-phonon and electrostatic interactions for T > 110 K and larger contributions from clamping losses for T < 110 K. We further demonstrate a room temperature thermomechanical-noise-limited force sensitivity of ~8 fN/Hz1/2 that, despite multiple dissipation pathways, remains effectively constant over the course of more than four years. Our results provide insight into the mechanisms limiting the performance of nanoelectromechanical systems derived from few-layer materials, which is vital to the development of next-generation force and mass sensors.