Biao Jin

Time-dependent spin-polarized transport through a resonant tunneling structure with multiterminals

The spin-dependent transport of the electrons tunneling through a resonant tunneling structure with ferromagnetic multi-terminal under dc and ac fields is explored by means of the nonequilibrium Green function technique. A general formulation for the time-dependent current and the time-averaged current is established. As its application the systems with two and three terminals in noncollinear configurations of the magnetizations under dc and ac biases are investigated, respectively. The asymmetric factor of the relaxation times for the electrons with different spin in the central region is uncovered to bring about various behaviours of the TMR. The present three-terminal device is different from that discussed in literature, which is coined as a spin transistor with source. The current-amplification effect is found. In addition, the time-dependent spin transport for the two-terminal device is studied. It is found that the photonic sidebands provide new channels for the electrons tunneling through the barriers, and give rise to new resonances of the TMR, which is called as the photon-asisted spin-dependent tunneling. The asymmetric factor of the relaxation times is observed to lead to additional resonant peaks besides the photon-asisted resonances.

Effect of spin-flip scattering on electrical transport in magnetic tunnel junctions

Abstract By means of the nonequilibrium Green function technique, the effect of spin-flip scatterings on the spin-dependent electrical transport in ferromagnet–insulator–ferromagnet (FM–I–FM) tunnel junctions is investigated. It is shown that Jullieres formula for the tunnel conductance must be modified when including the contribution from the spin-flip scatterings. It is found that the spin-flip scatterings could lead to an angular shift of the tunnel conductance, giving rise to the junction resistance not being the largest when the orientations of magnetizations in the two FM electrodes are antiparallel, which may offer an alternative explanation for such a phenomenon observed previously in experiments in some FM–I–FM junctions. The spin-flip assisted tunneling is also observed.

Spin-flip scattering effect on the current-induced spin torque in ferromagnet–insulator–ferromagnet tunnel junctions

Abstract We have investigated the current-induced spin transfer torque of a ferromagnet–insulator–ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τRx/Ie (τRx is the spin-transfer torque acting on the right ferromagnet and Ie is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τRx/Ie is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τRx/Ie versus the relevant orientation for different molecular fields.

Time-dependent spintronic transport and current-induced spin transfer torque in magnetic tunnel junctions

The responses of the electrical current and the current-induced spin transfer torque (CISTT) to an ac bias in addition to a dc bias in a magnetic tunnel junction are investigated by means of the time-dependent nonequilibrium Green function technique. The time-averaged current (time-averaged CISTT) is formulated in the form of a summation of dc current (dc CISTT) multiplied by the product of Bessel functions with the energy levels shifted by mh ω 0 . The tunneling current can be viewed to occur between the photonic sidebands of the two ferromagnets. The electrons can pass through the barrier easily under high frequencies but difficultly under low frequencies. The tunnel magnetoresistance almost does not vary with an ac field. It is found that the spin transfer torque, still being proportional to the electrical current under an ac bias, can be changed by varying frequency. Low frequencies could yield a rapid decrease of the spin transfer torque, while a large ac signal leads to a decrease of both the electrical current and the spin torque. If only an ac bias is present, the spin transfer torque is sharply enhanced at the particular amplitude and frequency of the ac bias. A nearly linear relation between such an amplitude and frequency is observed.

First- and second-order phase transitions, Fulde-ferrel inhomogeneous state, and quantum criticality in ferromagnet/superconductor double tunnel junctions

First- and second-order phase transitions, Fulde-Ferrel (FF) inhomogeneous superconducting (SC) state and quantum criticality in ferromagnet/superconductor/ferromagnet double tunnel junctions are investigated. For the antiparallel alignment of magnetizations, it is shown that a first-order phase transition from the homogeneous BCS state to the inhomogeneous FF state occurs at a certain bias voltage

Fulde-Ferrel-Larkin-Ovchinnikov inhomogeneous superconducting state and phase transitions induced by spin accumulation in a ferromagnet-dx2−y2-wave superconductor-ferromagnet tunnel junction

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EFFECT OF IMPURITIES AND EFFECTIVE MASSES ON SPIN-DEPENDENT ELECTRICAL TRANSPORT IN FERROMAGNET-NORMAL METAL-FERROMAGNET HYBRID JUNCTIONS

; while the transitions from the BCS state and the FF state to the normal state at

Spin-polarized transport in ferromagnet–marginal Fermi liquid systems

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Quasiparticle charge imbalance, first-order phase transition and quantum criticality in ferromagnet∕superconductor∕ferromagnet double-tunnel junctions

are of the second-order. A phase diagram for the central superconductor is presented. In addition, a quantum critical point (QCP),

Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

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