Biao Nie

Monolayer Graphene Film on ZnO Nanorod Array for High‐Performance Schottky Junction Ultraviolet Photodetectors

A new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free-standing ZnO nanorod (ZnONR) array with a layer of transparent monolayer graphene (MLG) film. The single-crystalline [0001]-oriented ZnONR array has a length of about 8-11 μm, and a diameter of 100∼600 nm. Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs. By studying the I-V characteristics in the temperature range of 80-300 K, the barrier heights of the MLG film/ZnONR array Schottky barrier are estimated at different temperatures. Interestingly, the heterojunction diode with typical rectifying characteristics exhibits a high sensitivity to UV light illumination and a quick response of millisecond rise time/fall times with excellent reproducibility, whereas it is weakly sensitive to visible light irradiation. It is also observed that this UV photodetector (PD) is capable of monitoring a fast switching light with a frequency as high as 2250 Hz. The generality of the above results suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices.

Monolayer Graphene/Germanium Schottky Junction As High-Performance Self-Driven Infrared Light Photodetector

We report on the simple fabrication of monolayer graphene (MLG)/germanium (Ge) heterojunction for infrared (IR) light sensing. It is found that the as-fabricated Schottky junction detector exhibits obvious photovoltaic characteristics, and is sensitive to IR light with high Ilight/Idark ratio of 2 × 10(4) at zero bias voltage. The responsivity and detectivity are as high as 51.8 mA W(-1) and 1.38 × 10(10) cm Hz(1/2) W(-1), respectively. Further photoresponse study reveals that the photovoltaic IR detector displays excellent spectral selectivity with peak sensitivity at 1400 nm, and a fast light response speed of microsecond rise/fall time with good reproducibility and long-term stability. The generality of the above results suggests that the present MLG/Ge IR photodetector would have great potential for future optoelectronic device applications.

Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

Monolayer graphene film/silicon nanowire array Schottky junction solar cells

Schottky junction solar cells were constructed by combining the monolayer graphene (MLG) films and the Si nanowire (SiNW) arrays. Pronounced photovoltaic characteristics were investigated for devices with both p-MLG/n-SiNWs and n-MLG/p-SiNWs structures. Due to the balance between light absorption and surface carrier recombination, devices made of SiNW arrays with a medium length showed better performance and could be further improved by enhancing the MLG conductivity via appropriate surface treatment or doping. Eventually, a photoconversion efficiency up to 2.15% is obtained by the means of filling the interspace of SiNW array with graphene suspension.

Electrochemical doping of anatase TiO2 in organic electrolytes for high-performance supercapacitors and photocatalysts

In this article, we report a facile electrochemical method to modify anatase TiO2 by cathodically biasing TiO2 in an ethylene glycol electrolyte. The resulting black TiO2 is highly stable with a significantly narrower bandgap and higher electrical conductivity. Furthermore, largely improved photoconversion efficiency (increased from 48% to 72% in the visible region, and from nearly 0% to 7% in the UV region), photocatalytic efficiency, and charge-storage capability (∼42 fold increase) are achieved for the treated TiO2.

Schottky solar cells based on graphene nanoribbon/multiple silicon nanowires junctions

We report the construction of Schottky solar cells based on graphene nanoribbon/multiple silicon nanowires (SiNWs) junctions. Only a few (∼10) SiNWs were involved to miniaturize the solar cell for nanoscale power source applications. It was found that doping level of the SiNWs played an important role in determining the device performance. By increasing the doping level, solar cell with open circuit voltage of 0.59 V and energy conversion efficiency of 1.47% were achieved under AM 1.5G illumination. The large effective junction area of the radial Schottky junction was responsible for the high device performance.We report the construction of Schottky solar cells based on graphene nanoribbon/multiple silicon nanowires (SiNWs) junctions. Only a few (∼10) SiNWs were involved to miniaturize the solar cell for nanoscale power source applications. It was found that doping level of the SiNWs played an important role in determining the device performance. By increasing the doping level, solar cell with open circuit voltage of 0.59 V and energy conversion efficiency of 1.47% were achieved under AM 1.5G illumination. The large effective junction area of the radial Schottky junction was responsible for the high device performance.

Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application

p-type ZnSe nanowires (NWs) with tunable electrical conductivity were fabricated on a large scale by evaporating a mixed powder composed of ZnSe and Sb in different ratios. According to the structural characterization, the Sb-doped ZnSe NWs are of single crystalline form and grow along the [001] direction. The presence of Sb in the ZnSe NWs was confirmed by XPS spectra. Electrical measurement of a single ZnSe:Sb NW based back-gate metal-oxide field-effect-transistor reveals that all the doped NWs exhibit typical p-type conduction characteristics, and the conductivity can be tuned over eight orders of magnitude, from 6.36 × 10(-7) S cm(-1) for the undoped sample to ∼37.33 S cm(-1) for the heavily doped sample. A crossed p-n nano-heterojunction photodetector made from the as-doped nanostructures displays pronounced rectification behavior, with a rectification ratio as high as 10(3) at ±5 V. Remarkably, it exhibits high sensitivity to ultraviolet light illumination with good reproducibility and quick photoresponse. Finally, the work mechanism of such a p-n junction based photodetector was elucidated. The generality of the above result suggests that the as-doped p-type ZnSe NWs will find wide application in future optoelectronics devices.

p-CdTe nanoribbon/n-silicon nanowires array heterojunctions: photovoltaic devices and zero-power photodetectors

Nano-heterojunction composed of single Sb-doped p-type CdTe nanoribbon (CdTeNR) and n-type silicon nanowires (SiNWs) array was successfully fabricated. The p–n heterojunction exhibited excellent rectifying behavior with a rectification ratio of 105 at ±2 V in the dark. Due to the matched band gap of CdTeNR with SiNWs, as well as the efficient light absorption of the SiNWs array, pronounced photovoltaic characteristics with energy conversion efficiency up to 2.1% under AM 1.5 G was achieved. Furthermore, the heterojunction device could serve as high-performance zero-power photodetector operated in the visible to near-infrared (NIR) range with good stability, high sensitivity, and fast response speed. It is expected that the p-CdTeNR/n-SiNWs array heterojunctions will find important applications in future nano-optoelectronic devices.

Flexible CuS nanotubes–ITO film Schottky junction solar cells with enhanced light harvesting by using an Ag mirror

Here we report the fabrication of a novel photovoltaic device based on CuS nanotubes (CuSNTs) and indium tin oxide (ITO) Schottky junctions. Large-quantity synthesis of CuSNTs was accomplished via a solution-based sacrificial template method under moderate conditions, while ITO Schottky contacts were fabricated via micro-fabrication and pulsed laser deposition (PLD). Upon light illumination, CuSNTs-ITO Schottky junctions exhibited pronounced photovoltaic behavior, giving rise to a power conversion efficiency of 1.17% on a conventional SiO(2)/Si substrate. Furthermore, by utilizing PET as the substrate, transparent and flexible CuSNTs-ITO solar cells were constructed and showed performance close to their device counterparts on a rigid substrate. Notably, it was found that the flexible devices were robust against tensile strain and could stand a bending angle up to ∼95°. To enhance the light absorption of the devices, an Ag mirror layer was deposited on the rear side of the PET substrate so as to allow multiple reflection and absorption of the incident light. As a result, the flexible devices showed a substantial performance improvement, yielding an efficiency of ∼2%. Our results demonstrate that low-cost and environmentally friendly CuSNTs-ITO solar cells are promising candidates for new-generation photovoltaic devices.

High-speed ultraviolet-visible-near infrared photodiodes based on p-ZnS nanoribbon–n-silicon heterojunction

Ag-doped p-type ZnS nanoribbons (NRs) with a high hole concentration of 5.1 × 1018 cm−3 and high carrier mobility of 154.0 cm2 V−2 s−1 were synthesized by using silver sulfide (Ag2S) as the Ag source. Excellent ohmic contact to p-ZnS NR with specific contact resistivity as low as 5.6 × 10−7 Ω cm2 was achieved by using bilayer Cu (4 nm)–Au electrode, which according to the depth profiling X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analysis can help to form a thin Cu2S interfacial layer between the electrode. Based on the high quality ZnS NRs and achievement on ohmic contact, p–n photodiodes have been constructed from the p-ZnS nanoribbon (NR)–n-Si heterojunction with a response speed as high as ∼48 μs (rise time). Furthermore, the device also exhibits stable optoelectrical properties with high sensitivity to UV-visible-NIR light and an enhancement of responsivities of 1.1 × 103 AW−1 for 254 nm under a reverse bias of 0.5 V. These generality of the above results shows that the p-ZnS NR–n-Si heterojunction will have potential applications in future high-performance photodetectors.