Biaolin Peng
Hong Kong Polytechnic University
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Publication
Featured researches published by Biaolin Peng.
ACS Applied Materials & Interfaces | 2015
Biaolin Peng; Qi Zhang; Xing Li; Tieyu Sun; Huiqing Fan; Shanming Ke; Mao Ye; Yu Wang; Wei Lu; Hanben Niu; Xierong Zeng; Haitao Huang
A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.
Advanced electronic materials | 2015
Biaolin Peng; Qi Zhang; Xing Li; Tieyu Sun; Huiqing Fan; Shanming Ke; Mao Ye; Yu Wang; Wei Lu; Hanben Niu; J. F. Scott; Xierong Zeng; Haitao Huang
Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here, it is demonstrated that a giant electric energy density (154 J cm−3, three times the highest value of lead-based systems and five times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability, and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3 (BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion, and the coexistence of the FE/AFE phases near the morphotropic phase boundary. The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.
Journal of Materials Chemistry C | 2016
Mao Ye; Tao Li; Qiu Sun; Zhikai Liu; Biaolin Peng; Chuanwei Huang; Peng Lin; Shanming Ke; Xierong Zeng; Xiang Peng; Lang Chen; Haitao Huang
A negative electrocaloric effect (ECE) in 4 mol% Eu-doped PbZrO3 antiferroelectric (AFE) thin films prepared by using a sol–gel method is investigated via indirect measurements. Temperature dependent P–E hysteresis loops were measured. A giant negative electrocaloric temperature change of over 6.6 K was observed. These results raised hopes for the enhancement of the cooling efficiency in combination with positive ECE.
Journal of Applied Physics | 2012
Qiang Li; Huiqing Fan; Wanqi Jie; Biaolin Peng; Changbai Long
Low frequency dielectric dispersion behavior of the indium doped cadmium zinc telluride single crystal has been investigated. The temperature dependent of dielectric loss shows a broadening peak at high temperatures, which is attributed to thermally activated relaxation process. The large dielectric permittivity can be attributed to the influence of the dc conductivity and the predominance of the dc conduction in low frequency region overshadows the true behavior of the imaginary part of dielectric permittivity. The contribution of dc conduction and ac conduction has also been studied. A polaron theory indicates that the dielectric relaxation of the indium doped cadmium zinc telluride crystal at high temperature is associated with the hopping localized cadmium vacancies and telluride antisites defects. The hopping energy increases from 1.204 eV at 499 K to 1.267 eV at 534 K monotonically, which is close to the thermal activation energy 1.541 eV and dc conductivity activation energy 1.239 eV.
Transactions on Electrical and Electronic Materials | 2015
Huiqing Fan; Biaolin Peng; Qi Zhang
(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (i = 75%, E = 560 kV/ cm ) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (AT = 45.3 K and AS = 46.9 JKkg at 598 kVcm) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented Pb0.8Ba0.2ZrO3 (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.
Advanced Functional Materials | 2013
Biaolin Peng; Huiqing Fan; Qi Zhang
Journal of the American Ceramic Society | 2013
Biaolin Peng; Huiqing Fan; Qi Zhang
Journal of Alloys and Compounds | 2015
Biaolin Peng; Qi Zhang; Xing Li; Tieyu Sun; Shanming Ke; Mao Ye; Yu Wang; Wei Lu; Hanben Niu; Xierong Zeng; Huiqing Fan; Haitao Huang
Journal of Alloys and Compounds | 2015
Xiaobin Yan; Biaolin Peng; Xuefeng Lu; Qizheng Dong; Wensheng Li
Ceramics International | 2015
Biaolin Peng; Qi Zhang; Shanming Ke; Tao Li; Hanben Niu; Xierong Zeng; Huiqing Fan; Haitao Huang