Bibhu P. Swain

Investigation of electronic configuration and plasmon loss spectra in Au-catalyzed silicon nanowire networks

The present study investigated the effect of a silane flow rate on chemical bonding structures of silicon nanowires (SiNWs) synthesized by atmospheric pressure chemical vapor deposition. The structural and chemical bonding structures were studied by Raman spectroscopy, Fourier transform infrared spectroscopy, and field emission scanning electron microscopy. The peak at 500 cm−1 in Raman spectra indicated the nanocrystalline SiNWs with outer matrix of a-Si/SiO2. X-ray photoelectron spectroscopy has been used to study the electronic structure and plasmon energy of SiNWs. The electronic environments of core orbital spectra of Si(2p) and O(1s) have been analyzed by the binding energy between constituent atoms. The plasmon spectra from different nanowires were estimated from curve fitting techniques with varying SiH4 flow rate. The peak at 17 eV is due to the Si plasmon in core SiNWs while the peak for interstitial Au appeared at ∼10 eV.

XRR and SAXS Study of Hydrogenated Amorphous Silicon Oxycarbide (a-SiOC:H) Films

Thin films of hydrogenated silicon-oxycarbide (a-SiOCx:H) have largely replaced pure silicon oxide films as back end of line (BEOL) processing in Ultra Large Scale Integrate Circuit (ULSI). A single chamber system for hot wire chemical vapor deposition (HWCVD) was employed to deposit different films of a-SiOCx:H with 0.5 < x < 0.8. All films were characterized by infrared spectroscopy and X-ray photoelectron spectroscopy (XPS) to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity (XRR) and Small angle X- ray scattering (SAXS) to determine the porosity and inhomogeneities (clustering) in the films.

Effect of Residual Stress on P Doped Nano-Crystalline Silicon Deposited by HWCVD Films

p doped nano-crystal l ine si l icon (nc-Si) were deposi ted by hot wire chemical vapour deposi t ion (HWCVD) using SiH4 , H2 and B2H6 precursors. nc-Si was characterized by XRD, Raman and residual st ress. Residual stress of nc-Si were measure by Sin2ψ vs d method. As deposi ted fi lms show tensi le st ress and decreases from 2500 MPa to 250 MPa wi th increase of B2H6 f low rate f rom 0.01 to 5 %. Crystal l ine f ract ion of p doped nc-Si decreases f rom 35 to 57% as wi th increase of B2H6 concent rat ion