Bin-Bin Zhang
Nanjing University
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Publication
Featured researches published by Bin-Bin Zhang.
Journal of Applied Physics | 2013
Nian X. Sun; Song-Tao Dong; Bin-Bin Zhang; Y. B. Chen; Jian Zhou; Shan-Tao Zhang; Zheng-Bin Gu; Shu-Hua Yao; Yan-Feng Chen
Alkaline-earth elements isovalently substituted into a [Bi2AE2O4][CoO2]y (AE2 = Ca2, Sr2, and CaSr) single crystal with a layered structure were grown by the optical floating zone method. Structural characterization by X-ray diffraction and electron microscopy showed that the layers were oriented perpendicular to the c-axis, as well as the growth of direction was parallel to the ab-plane. The thermoelectric properties, including the Seebeck effect, electrical conductivity and thermal conductivity were investigated. The results of the thermoelectric measurements showed that the full substitution of Ca for Sr in [Bi2Sr2−xCaxO4][CoO2]y has the best overall thermoelectric performance. Compared with the other two cases studied, the full Ca substituted crystal [Bi2Ca2O4][CoO2]y exhibits both reduced resistivity and thermal conductivity, but not a reduced Seebeck coefficient. The enhanced thermoelectric property in [Bi2Ca2O4][CoO2]y is mainly due to lower structural symmetry, which is confirmed by electron micro...
Physical Review Letters | 2016
Xiang-Bing Li; Wen-Kai Huang; Yang-Yang Lv; Kai-Wen Zhang; Chao-Long Yang; Bin-Bin Zhang; Y. B. Chen; Shu-Hua Yao; Jian Zhou; Ming-Hui Lu; Li Sheng; Shao-Chun Li; Jin-Feng Jia; Qi-Kun Xue; Yan-Feng Chen; D. Y. Xing
We report an atomic-scale characterization of ZrTe
Applied Physics Letters | 2016
Yang-Yang Lv; Bin-Bin Zhang; Xiao Li; Shu-Hua Yao; Y. B. Chen; Jian Zhou; Shan-Tao Zhang; Ming-Hui Lu; Yan-Feng Chen
_5
Physical Review B | 2015
Lunyong Zhang; Qi-Feng Liang; Ye Xiong; Bin-Bin Zhang; Lei Gao; Handong Li; Y. B. Chen; Jian Zhou; Shan-Tao Zhang; Zheng-Bin Gu; Shu-Hua Yao; Zhiming Wang; Yuan Lin; Yan-Feng Chen
by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe
Journal of the Physical Society of Japan | 2014
Lunyong Zhang; Y. B. Chen; Bin-Bin Zhang; Jian Zhou; Shan-Tao Zhang; Zheng-Bin Gu; Shu-Hua Yao; Yan-Feng Chen
_5
Scientific Reports | 2016
Yang-Yang Lv; Bin-Bin Zhang; Xiao Li; Bin Pang; Fan Zhang; Dajun Lin; Jian Zhou; Shu-Hua Yao; Y. B. Chen; Shan-Tao Zhang; Ming-Hui Lu; Zhongkai Liu; Yulin Chen; Yan-Feng Chen
is a two dimensional topological insulator. It is also found that an applied magnetic field induces energetic splitting and spatial separation of the topological edge states, which can be attributed to a strong link between the topological edge states and bulk topology. The perfect surface steps and relatively large bandgap make ZrTe
Scientific Reports | 2017
Yang-Yang Lv; Lin Cao; Xiao Li; Bin-Bin Zhang; Kang Wang; Bin Pang; Ligang Ma; Dajun Lin; Shu-Hua Yao; Jian Zhou; Y. B. Chen; S. Dong; Wenchao Liu; Ming-Hui Lu; Yulin Chen; Yan-Feng Chen
_5
CrystEngComm | 2015
S. Dong; Yang-Yang Lv; Bin-Bin Zhang; Fan Zhang; Shu-Hua Yao; Y. B. Chen; Jian Zhou; Shan-Tao Zhang; Zheng-Bin Gu; Yan-Feng Chen
be a potential candidate for future fundamental studies and device applications.
Applied Physics Letters | 2014
Song-Tao Dong; Bin-Bin Zhang; Lunyong Zhang; Y. B. Chen; Shu-Hua Yao; Jian Zhou; Shan-Tao Zhang; Zheng-Bin Gu; Yan-Feng Chen
Recently, the extremely large magnetoresistance (MR) observed in transition metal telluride, like WTe2, attracted much attention because of the potential applications in magnetic sensor. Here, we report the observation of extremely large magnetoresistance as 3.0 × 104% measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (∼1.4 × 104%) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the magnetic sensors.
AIP Advances | 2012
Shu-Hua Yao; Bin-Bin Zhang; Jian Zhou; Y. B. Chen; Shan-Tao Zhang; Zheng-Bin Gu; S. Dong; Yan-Feng Chen
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