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Dive into the research topics where Binhe Wu is active.

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Featured researches published by Binhe Wu.


Journal of Physics D | 2008

A novel nanostructure and multiferroic properties in Pb(Zr0.52Ti0.48)O3/CoFe2O4 nanocomposite films grown by pulsed-laser deposition

Jinxing Zhang; Jiyan Dai; Wei Lu; H.L.W. Chan; Binhe Wu; Dalai Li

Multiferroic nanocomposite thin films containing Pb(Zr(0.52)Ti(0.48))O(3) (PZT) and CoFe(2)O(4)(CFO) with a novel nanostructure are deposited on (1 0 0)-oriented Nb-doped SrTiO(3) (STO) substrates by pulsed-laser deposition. Structural characterizations show that only PZT and CFO phases exist in the composite films, and the perovskite-structured PZT nano-pyramids with diameters of 50-100 nm are randomly embedded in the spinel-structured polycrystalline CFO matrix. Ferroelectric and magnetic hysteresis loops are simultaneously observed at room temperature. Magnetic-field-dependent capacitance measurement reveals an increase in capacitance of about 1.46% with an applied magnetic field. The multiferroic properties in the nanocomposite are also characterized by ferroelectric and magnetic domain imaging in the local areas of the sample.


Applied Physics Letters | 2002

Sulphur passivation of the InGaAsSb/GaSb photodiodes

Binhe Wu; Guanqun Xia; Z. F. Li; Jian Zhou

Sulphur passivation effects on InGaAsSb/GaSb mesa-type photodiodes were investigated. Measurement results showed zero-bias resistance increased up to 40 times and reverse currents decreased greatly, as a result of sulphur passivation. Current–voltage characteristics showed no sign of degradation of InGaAsSb surface. Auger electron spectroscopy and x-ray photoelectron spectroscopy results demonstrated that the passivation layer is not in the form of S compounds but S element, S8 or Sn.


Scientific Reports | 2015

In Situ Atom Scale Visualization of Domain Wall Dynamics in VO2 Insulator-Metal Phase Transition

Xinfeng He; Tao Xu; Xiaofeng Xu; Yijie Zeng; Jing-Jing Xu; Litao Sun; Chunrui Wang; Huaizhong Xing; Binhe Wu; Aijiang Lu; Dingquan Liu; Xiaoshuang Chen; Junhao Chu

A domain wall, as a device, can bring about a revolution in developing manipulation of semiconductor heterostructures devices at the atom scale. However, it is a challenge for these new devices to control domain wall motion through insulator-metal transition of correlated-electron materials. To fully understand and harness this motion, it requires visualization of domain wall dynamics in real space. Here, domain wall dynamics in VO2 insulator-metal phase transition was observed directly by in situ TEM at atom scale. Experimental results depict atom scale evolution of domain morphologies and domain wall exact positions in (202) and (040) planes referring to rutile structure at 50°C. In addition, microscopic mechanism of domain wall dynamics and accurate lattice basis vector relationship of two domains were investigated with the assistance of X-ray diffraction, ab initio calculations and image simulations. This work offers a route to atom scale tunable heterostructure device application.


Journal of Physics: Condensed Matter | 2007

Fluctuation electron microscopy of Al-based metallic glasses: effects of minor alloying addition and structural relaxation on medium-range structural homogeneity

Jie Wen; Hong Yang; Hui-qun Guo; Binhe Wu; M. L. Sui; J.Q. Wang; E. Ma

Al-based metallic glasses with relatively high glass-forming ability have been studied using fluctuation electron microscopy (FEM). These glasses exhibited well-defined glass transition and remained fully amorphous throughout the FEM experiments. Peaks were observed in the normalized intensity variance curves, evolving with sample composition and thermal history, while diffraction patterns remained identical. Specifically, minor alloying of Co into the Al85Ni5Y10 glass improved its medium-range homogeneity. This is in accord with, and partly explains, the increase in the glass-forming ability. After annealing of Al85Ni5Y8Co2 below its glass transition temperature, FEM suggests structural homogenization or intensified medium-range fluctuations, depending on the annealing temperature. Such dissolution versus growth of quenched-in heterogeneity accompanying structural relaxation was not detectable using other techniques.


Journal of Applied Physics | 2003

Simulation of semiconductor intersubband Raman laser

Binhe Wu; J. C. Cao; Guanqun Xia

A Raman laser [Liu et al., Appl. Phys. Lett. 78, 3580 (2001)] that operated on quantum well intersubband transitions was reported recently. Properties of this optically pumped double quantum well structure are investigated numerically in this article. The carrier lifetime of each subband in the structure is calculated and the pump-induced carrier distributions for each subband are obtained. Using the density matrix method we calculate the stimulated Raman gain and find that it does not always increase linearly with the pumping intensity as the former analysis suggested, but, rather, only when the pumping intensity is low. When the pumping intensity is high, the Raman gain saturates. The calculated results are qualitatively in agreement with the experimental ones of Liu et al.


Journal of Applied Physics | 2010

The resonant tunneling through a graphene multiquantum well system

G. Xu; Xg Xu; Binhe Wu; JC(重点实验室) Cao; Chao Zhang

The transport properties of a graphene multiquantum well system are investigated numerically using transfer-matrix method. There are transmission gaps for electrons and holes in the transmission spectra at tilted incidence. In the transmission gaps, a few resonant tunneling peaks appear, defined as transmission windows, which are related with the bound states in the quantum wells. Unlike conventional semiconductor nanostructures, the location and the width of the transmission windows are sensitive not only to the quantum well width but also the incident angle. The number of the quantum wells determines the fine structure of the transmission windows. The anisotropic property is affected in the following way: the increase in well width makes the nonzero-transmission incident angle range decrease, and the interference effect is enhanced as the well number increases. Tiny oscillation of the conductance and fine structures in the middle energy range are due to the resonant tunneling induced by the multiquantum...


Applied Physics Letters | 2015

Negative capacitance switching via VO2 band gap engineering driven by electric field

Xinfeng He; Jing Xu; Xiaofeng Xu; Congcong Gu; Fei Chen; Binhe Wu; Chunrui Wang; Huaizhong Xing; Xiaoshuang Chen; Junhao Chu

We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO2 layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO2 band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO2 can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.


Journal of Applied Physics | 2003

Sulfur-passivation mechanism analysis of GaInAsSb photodetectors

Z. F. Li; Guanqun Xia; Binhe Wu; Wenkui Huang; Zongquan Cheng

Sulfur passivation of GaInAsSb photodetectors was studied in terms of Auger electron spectroscopy and x-ray photoelectron spectroscopy. The experimental results showed that Sb–S and In–S bonds exist on the sulfur-passivated GaInAsSb surfaces. The reverse dark current of the photodetectors was reduced and the peak detectivity reached 2.83×1010 cm Hz1/2 W−1 after passivation.


Journal of Physics: Condensed Matter | 2004

Phonon-assisted transport through a single quantum dot with impurity scattering effects

Binhe Wu; Juncheng Cao

In this paper, we calculate the current and shot noise for electrons transporting through a single quantum dot with phonon and impurity scatterings. By iteratively calculating the surface Green function, we obtain the self-energy due to coupling between the quantum dot and the semi-infinite leads. Significant couplings to the localized phonon modes and impurity states are included in our model exactly. Our results show that the resonance transmission coefficient and differential conductance split into small peaks in the presence of dot–impurity interaction. Satellite peaks caused by phonon emission (absorption) appear in our results too. As the numerical results, impurity states have weak influence on the suppression of shot noise. On the other hand, shot noise in the conductor will be enhanced if the phonon mode effects are included in our calculations.


Journal of Applied Physics | 2014

Twinning effect on photoluminescence spectra of ZnSe nanowires

Jing Xu; Chunrui Wang; Binhe Wu; Xiaofeng Xu; Xiaoshuang Chen; Hongseok Oh; Hyeonjun Baek; Gyu-Chul Yi

Bandgap engineering in a single material along the axial length of nanowires may be realized by arranging periodic twinning, whose twin plane is vertical to the axial length of nanowires. In this paper, we report the effect of twin on photoluminescence of ZnSe nanowires, which refers to the bandgap of it. The exciton-related emission peaks of transverse twinning ZnSe nanowires manifest a 10-meV-blue-shift in comparison with those of longitudinal twinning ZnSe nanowires. The blue-shift is attributed to quantum confinement effect, which is influenced severely by the proportion of wurtzite ZnSe layers in ZnSe nanowires.

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Xiaoshuang Chen

Chinese Academy of Sciences

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Juncheng Cao

Chinese Academy of Sciences

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Guanqun Xia

Chinese Academy of Sciences

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G. Xu

Chinese Academy of Sciences

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Jian Zhou

Chinese Academy of Sciences

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