Binni Varghese

Microstructuring of Graphene Oxide Nanosheets Using Direct Laser Writing

Graphene(G),a single atomiclayer ofaromatic carbon atoms,has attracted much attention recently owing to its fascinating properties such as massless fermions, ballistic electronic transport, and ultrahigh electron mobility. [1] Currently, there are many approaches to the synthesis of graphene ranging from chemical vapor deposition from hydrocarbon to solution phase methods involving the chemical exfoliation of graphite. [2] One commonly used solution-processing route to graphene involved the chemical reduction of graphene oxide (GO). GO is produced by the oxidative treatment of graphite. [2] The basal planes of GO are decorated with epoxide and hydroxyl groups, while carboxylic and carbonyl groups are located at the edges. These oxygen functionalities render GO hydrophilic and improve its solubility, however they destroy the aromaticity of the graphene framework. As a result, GO is insulating, and a chemical reduction and thermal annealing treatment is needed before electronic conductivity could be recovered. The presence of oxygen functional groups also reduces the thermal stability of GO relative to that of G, since GO can be thermally pyrolized at high temperatures and transformed into volatile carbonaceous oxides. The thermal instability of GO motivates us to consider a strategy for the microstructuing of GO nanosheets using laser-assisted etching. The microstructuring of GO is relevant to the challenges of lithographically patterning G, since GO and G are interconvertible to some extent. Recently, promising approaches for the patterned assemblies of G on substrates have been developed. [3–8] Micro-contact printing using molecular templates was used to transfer GO sheets onto the pre-defined areas of the substrate surfaces via electrostatic attachment. [3] Large-scale G films were recently synthesized on patterned nickel layers using chemical vapor deposition. [7] All the patterning methods reported so far involved conventional lithographic techniques or employment of masks for the definition of patterns on substrates. To date, there are few demonstrations of a maskless, direct ‘‘writing’’ pattern on G-related materials using electron beam or optical methods.

Structure-Mechanical Property of Individual Cobalt Oxide Nanowires

We present a comprehensive approach to address the correlation between mechanical properties of nanowires (NWs) with their characteristic size, microstructure, and chemical composition. Using this technique, the Youngs modulus of Co3O4 NWs with different sizes was evaluated. Thermal annealing in inert atmosphere was found to induce chemical reduction of as-grown Co3O4 NWs into CoO NWs without modifying their geometrical shape. Both Co3O4 and CoO NWs exhibited a size-dependent variation in Youngs modulus.

Oxide nanowire networks and their electronic and optoelectronic characteristics

Oxide nanowire networks or oxide nanonets leverage some of the exceptional functionalities of one-dimensional nanomaterials along with the fault tolerance and flexibility of interconnected nanowires to creating exciting opportunities in large-area electronics as well as green energy systems. This paper reviews the electronic and optoelectronic properties of these networks and highlights their potential applications in field-effect transistors, optoelectronic devices, and solar cells. Techniques to grow nanowires and their subsequent integration into networks using contact printing and electrospinning are described. Electrical properties of field-effect transistors fabricated from contact printed nanowire networks are discussed, and means of integration of the nanowire networks of heterogenous materials that enable ambipolar device operation are outlined. Photocurrent properties of these nanowires are described, including the dye sensitization of large-bandgap SnO(2) nanowires. The final section deals with the advantages of employing nanowire networks in dye-sensitized solar cells and the dependence of solar cell performance on morphology and surface area.

Electrical and photoresponse properties of Co3O4 nanowires

Electrical and photocurrent characteristics of single Co3O4 nanowire devices were studied systematically. Current-voltage characteristics’ measurements and impedance spectroscopy of single Co3O4 nanowire devices were performed and analysed using possible mechanism. Photoresponses of individual nanowires were obtained by global irradiation of laser beams with photon energies above band gap and at sub-band gap of the nanowires. The magnitude of photocurrent and its response time revealed that defect level excitations significantly contribute to the photoresponse of Co3O4 nanowires. In addition, the electrically Ohmic nature of the nanowire/Pt contact and p-type conductivity of Co3O4 nanowire is extracted from the current-voltage characteristics and spatially resolved photocurrent measurements.

Probing the photoresponse of individual Nb2O5 nanowires with global and localized laser beam irradiation

Photoresponse of isolated Nb(2)O(5) nanowires (NW) padded with platinum (Pt) at both ends were studied with global irradiation by a laser beam and localized irradiation using a focused laser beam. Global laser irradiation on individual NW in ambient and vacuum conditions revealed photocurrent contributions with different time characteristics (rapid and slowly varying components) arising from defect level excitations, thermal heating effect, surface states and NW-Pt contacts. With a spot size of < 1 µm, localized irradiation highlighted the fact that the measured photocurrent in this single NW device (with and without applied bias) depended sensitively on the photoresponse at the NW-Pt contacts. At applied bias, unidirectional photocurrent was observed and higher photocurrent was achieved with localized laser irradiation at reverse-biased NW-Pt contacts. At zero bias, the opposite polarity of photocurrents was detected when the two NW-Pt contacts were subjected to focused laser beam irradiation. A reduced Schottky barrier/width resulting from an increase in charge carriers and thermoelectric effects arising from the localized thermal heating due to focused laser beam irradiation were proposed as the mechanisms dictating the photocurrent at the NW-Pt interface. Comparison of photocurrents generated upon global and localized laser irradiation showed that the main contribution to the photocurrent was largely due to the photoresponse of the NW-Pt contacts.

Noise Characterization of Perpendicular Recording Media by Cluster Size Measurements

New methodology to obtain reliable correlation between magnetic cluster details measured using magnetic force microscopy (MFM) and noise in perpendicular recording media is reported. In addition to the ac demagnetized state, which is often studied by several researchers, magnetic clusters were examined at two other magnetic states of the recording medium to obtain details on thermally unstable and relatively nonreversible clusters that would increase noise and bit-error rates. The proposed method was employed to study magnetic clusters of media samples fabricated at different conditions. Measurements on various samples demonstrated that the MFM can be used to understand the thermally unstable and irreversible clusters in a perpendicular recording medium. A direct correlation between the signal-to-noise ratio of the medium measured using spin-stand and magnetic cluster details from MFM images is obtained. The trend can also be used to understand and distinguish the source of noise (such as writing issues or the media microstructure issues).

Equiatomic CoPt thin films with extremely high coercivity

In this paper, magnetic and structural properties of near-equiatomic CoPt thin films, which exhibited a high coercivity in the film-normal direction—suitable for perpendicular magnetic recording media applications—are reported. The films exhibited a larger coercivity of about 6.5 kOe at 8 nm. The coercivity showed a monotonous decrease as the film thickness was increased. The transmission electron microscopy images indicated that the as fabricated CoPt film generally consists of a stack of magnetically hard hexagonal-close-packed phase, followed by stacking faults and face-centred-cubic phase. The thickness dependent magnetic properties are explained on the basis of exchange-coupled composite media. Epitaxial growth on Ru layers is a possible factor leading to the unusual observation of magnetically hard hcp-phase at high concentrations of Pt.

Microstructure investigations of hcp phase CoPt thin films with high coercivity

CoPt films have been grown in the past with a high anisotropy in L11 or L10 phase, and a high coercivity is observed only in L10 CoPt films. Recently, we have grown CoPt films which exhibited a high coercivity without exhibiting an ordered phase. In this study, high resolution transmission electron microscopy (HRTEM) investigations have been carried out to understand the strong thickness and deposition pressure dependent magnetic properties. HRTEM studies revealed the formation of an initial growth layer in a metastable hexagonal (hcp) CoPt with high anisotropy. This phase is believed to be aided by the heteroepitaxial growth on Ru as well as the formation of Ru-doped CoPt phase. As the films grew thicker, transformation from hcp phase to an energetically favourable face-centered cubic (fcc) phase was observed. Stacking faults were found predominantly at the hcp-fcc transformation region of the CoPt film. The higher coercivity of thinner CoPt film is attributed to relatively less fcc fraction, less stacking faults, and to the isolated grain structure of these films compared to the thicker films.

Physical and Electrical Properties of Single Zn2SnO4 Nanowires

Electrical characterizations of single Zn2SnO4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn2SnO4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices.

Investigations of stacking fault density in perpendicular recording media

In magnetic recording media, the grains or clusters reverse their magnetization over a range of reversal field, resulting in a switching field distribution. In order to achieve high areal densities, it is desirable to understand and minimize such a distribution. Clusters of grains which contain stacking faults (SF) or fcc phase have lower anisotropy, an order lower than those without them. It is believed that such low anisotropy regions reverse their magnetization at a much lower reversal field than the rest of the material with a larger anisotropy. Such clusters/grains cause recording performance deterioration, such as adjacent track erasure and dc noise. Therefore, the observation of clusters that reverse at very low reversal fields (nucleation sites, NS) could give information on the noise and the adjacent track erasure. Potentially, the observed clusters could also provide information on the SF. In this paper, we study the reversal of nucleation sites in granular perpendicular media based on a magneti...