Bipin Bhola

Multi-level multi-thermal-electron FDTD simulation of plasmonic interaction with semiconducting gain media: applications to plasmonic amplifiers and nano-lasers

Interactions between a semiconducting gain medium and confined plasmon-polaritons are studied using a multilevel multi-thermal-electron finite-difference time-domain (MLMTE-FDTD) simulator. We investigated the amplification of wave propagating in a plasmonic metal-semiconductor-metal (MSM) waveguide filled with semiconductor gain medium and obtained the conditions required to achieve net optical gain. The MSM gain waveguide is used to form a plasmonic semiconductor nano-ring laser(PSNRL) with an effective mode volume of 0.0071 microm3, which is about an order of magnitude smaller than the smallest demonstrated integrated photonic crystal based laser cavities. The simulation shows a lasing threshold current density of 1kA/cm2 for a 300 nm outer diameter ring cavity with 80 nm-wide ring. This current density can be realistically achieved in typical III-V semiconductor, which shows the experimental feasibility of the proposed PSNRL structure.

Photo-Stability Measurement of Electro-Optic Polymer Waveguides With High Intensity at 1550-nm Wavelength

Photo-stability measurements of electro-optic polymer inverted ridge waveguides, fabricated from AJ-CKL1, AJ416 and LPD-80, are conducted up to 30, 100, and 100 mW of input power coupled into the waveguides respectively. These experiments are performed in a N2 atmosphere to exclude absorbed O2. AJ416 and LPD-80 are found to be stable up to at least 1 MW/cm2 at 1550 nm. In contrast, photo-degradation was observed in an ambient atmosphere with 1 mW (LPD-80) and 10 mW (AJ-CKL1) coupled into the waveguides.

FDTD simulation of semiconductor plasmonic nano-ring laser at 1550nm based on realistic semiconductor gain model

We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-level multi-electron FDTD model.

Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model

We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multi-level multi-electron (MLME) system. We show how this MLME-FDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.

Mode Analysis of Plasmonic Waveguiding Structures for Laser Applications

Mode simulations for surface plasmonic nano-waveguides are presented for applications in developing nanometer sized laser cavities. The structure considered is a semiconductor quantum well sandwiched between metal layers. The simulations show that the plasmonic waveguide follow the dispersion relations of a conventional dielectric waveguide. An estimate for the gain requirement on the quantum well structure is also provided.

Mode Dispersion Relations for Quantum Well Assisted Surface Plasmonic Structures

In this paper, a plasmonic waveguiding structure is presented for effectively compensating the propagation losses of a plasmonic waveguide structure by utilizing a metallic strip sandwiched in between two quantum wells. The mode dispersion relations of the plasmonic waveguide are calculated and the gain requirement on the quantum well structure is also presented.

High-Speed Resonant Microdisk Photodetectors Heterogeneouly Integrated to Si-Wire Waveguide

Etched-mesa micro-disk resonant photo-detector heterogeneously integrated to Si-wire waveguide by oxide-to-oxide bonding has been proposed and analyzed by 3D-FDTD simulation. The 3 mum-, 5 mum- and 8 mum-diameter devices give free-spectral-ranges of 9.4THz, 5.8THz and 3.3THz, respectively. 3 mum- and 5 mum-diameter photo-detector potentially can give bandwidths better than 100 GHz.