Blair Morrison

Frequency agile microwave photonic notch filter with anomalously high stopband rejection.

We report a novel class microwave photonic (MWP) notch filter with a very narrow isolation bandwidth (10 MHz), an ultrahigh stopband rejection (>60 dB), a wide frequency tuning (1-30 GHz), and flexible bandwidth reconfigurability (10-65 MHz). This performance is enabled by a new concept of sideband amplitude and phase controls using an electro-optic modulator and an optical filter. This concept enables energy efficient operation in active MWP notch filters, and opens up a pathway toward enabling low-power nanophotonic devices as high-performance RF filters.

Si3N4 ring resonator-based microwave photonic notch filter with an ultrahigh peak rejection

We report a simple technique in microwave photonic (MWP) signal processing that allows the use of an optical filter with a shallow notch to exhibit a microwave notch filter with anomalously high rejection level. We implement this technique using a low-loss, tunable Si₃N₄ optical ring resonator as the optical filter, and achieved an MWP notch filter with an ultra-high peak rejection > 60 dB, a tunable high resolution bandwidth of 247-840 MHz, and notch frequency tuning of 2-8 GHz. To our knowledge, this is a record combined peak rejection and resolution for an integrated MWP filter.

Nonlinear Integrated Microwave Photonics

Harnessing nonlinear optical effects in a photonic chip scale has been proven useful for a number of key applications in optical communications. Microwave photonics can also benefit from the adoption of such a technology, creating a new concept of nonlinear integrated microwave photonics. Here, we discuss the potential of on-chip nonlinear processing towards the creation of robust and multifunctional microwave photonic (MWP) processors. We also highlight key recent results in the field, including frequency agile MWP filters and ultrawideband signal generators.

Tailoring of the Brillouin gain for on-chip widely tunable and reconfigurable broadband microwave photonic filters

An unprecedented Brillouin gain of 44 dB in a photonic chip enables the realization of broadly tunable and reconfigurable integrated microwave photonic filters. More than a decade bandwidth reconfigurability from 30 up to 440 MHz, with a passband ripple <1.9  dB is achieved by tailoring the Brillouin pump. The filter central frequency is continuously tuned up to 30 GHz with no degradation of the passband response, which is a major improvement over electronic filters. Furthermore, we demonstrate pump tailoring to realize multiple bandpass filters with different bandwidths and central frequencies, paving the way for multiple on-chip microwave filters and channelizers.

Tunable narrowband microwave photonic filter created by stimulated Brillouin scattering from a silicon nanowire.

We demonstrate the first, to the best of our knowledge, functional signal processing device based on stimulated Brillouin scattering in a silicon nanowire. We use only 1 dB of on-chip stimulated Brillouin scattering gain to create an RF photonic notch filter with 48 dB of suppression, 98 MHz linewidth, and 6 GHz frequency tuning. This device has potential applications in on-chip microwave signal processing and establishes the foundation for the first CMOS-compatible high-performance RF photonic filter.

Advanced Integrated Microwave Signal Processing With Giant On-Chip Brillouin Gain

Processing of microwave signals using photonics has several key advantages for applications in wireless communications. However, to bring photonic-based microwave signal processing to the mainstream requires a reduction of the form factor. Integration is a route for achieving high-performance, low-cost, and small-footprint microwave photonic devices. A high on-chip stimulated Brillouin scattering (SBS) gain is essential for synthesizing several key functionalities for advanced integrated microwave signal processing. We have optimized our on-chip SBS platform to achieve a record on-chip gain of 52 dB. In this paper, we discuss the implications of this giant gain from the viewpoint of new enabled technologies. The giant gain can be distributed over wide frequencies, which can be exploited for the realization of reconfigurable microwave bandpass, bandstop, and multiband filters. High gain also enables the demonstration of low-threshold on-chip lasers, which can be of relevance for a low-noise radio-frequency signal generation. These wide ranges of functionalities are made possible by the breakthrough on-chip gain makes Brillouin-based microwave photonic signal processing a promising approach for real-world implementation in the near future.

Low-error and broadband microwave frequency measurement in a silicon chip

Instantaneous frequency measurement (IFM) of microwave signals is a fundamental functionality for applications ranging from electronic warfare to biomedical technology. Photonic techniques, and nonlinear optical interactions in particular, have the potential to broaden the frequency measurement range beyond the limits of electronic IFM systems. The key lies in efficiently harnessing optical mixing in an integrated nonlinear platform, with low losses. In this work, we exploit the low loss of a 35 cm long, thick silicon waveguide, to efficiently harness Kerr nonlinearity, and demonstrate the first on-chip four-wave mixing (FWM) based IFM system. We achieve a large 40 GHz measurement bandwidth and record-low measurement error. Finally, we discuss the future prospect of integrating the whole IFM system on a silicon chip to enable the first reconfigurable, broadband IFM receiver with low-latency.

Compact Brillouin devices through hybrid integration on silicon

A range of unique capabilities in optical and microwave signal processing and generation have been demonstrated using stimulated Brillouin scattering (SBS). The need to harness SBS in mass-manufacturable integrated circuits has led to a focus on silicon-based material platforms. Remarkable progress in silicon-based Brillouin waveguides has been made, but results have been hindered by nonlinear losses present at telecommunications wavelengths. Here, we report on a new approach to surpass this issue through the integration of a high Brillouin gain material, As2S3, onto a silicon-based chip. We fabricated a compact spiral device within a silicon circuit, achieving an order-of-magnitude improvement in Brillouin amplification. To establish the flexibility of this approach, we fabricated a ring resonator with free spectral range precisely matched to the Brillouin shift, enabling the first demonstration, to our knowledge, of Brillouin lasing in a planar integrated circuit. Combining active photonic components with the SBS devices shown here will enable the creation of compact, mass-manufacturable optical circuits with enhanced functionalities.

Stimulated Brillouin Scattering in Photonic Integrated Circuits: Novel Applications and Devices

The last few years have seen major progress in harnessing on-chip photon-phonon interactions, leading to a wide range of demonstrations of new functionalities. Utilizing not only the optical response of a nonlinear waveguide-but also acoustic resonances-enables the realization of microwave devices with unprecedented performance, otherwise hard to achieve in all-optical processing schemes or electronically. Here, we overview on-chip stimulated Brillouin scattering (SBS) with special emphasis on microwave sources and microwave signal processing schemes. We review the different material platforms and structures for on-chip SBS, ranging from chalcogenide rib waveguides to hybrid silicon/silicon-nitride structures, high-Q photonic-phononic silica microresonators, and suspended silicon nanowires. We show that the paradigm shift in SBS research-from long length of fibers to chip-scale devices-is now moving toward fully integrated photonic-phononic CMOS chips.

Microwave photonic notch filter using on-chip stimulated Brillouin scattering

We report the first integrated tunable microwave photonic notch filter based on on-chip stimulated Brillouin scattering. The notch filter has a high-resolution with 3-dB and 6-dB bandwidths of 126 MHz and 78 MHz, respectively. The filter has a notch depth of 20 dB, and the notch frequency can be continuously tuned over a range of 2 8 GHz, which is limited only by the current measurement setup.