Brenden Wiggins

Single crystal of LiInSe2 semiconductor for neutron detector

Single crystals of semiconductor-grade lithium indium selenide (LiInSe2) were grown using the vertical Bridgman method. The orthorhombic structure of the materials was verified using powder x-ray diffraction. The room temperature band gap of the crystal was found to be 2.85 eV using optical absorption measurements. Resistivity of LiInSe2, obtained using current-voltage measurements, has semiconducting nature (decreases with increasing temperature) and is in order of 1010 Ω·cm. Photoconductivity measurement showed the photocurrent peak at 445 nm. Nuclear radiation devices were fabricated, and alpha particle detection was observed, suggesting that this material could be a candidate for neutron detection applications.

Defects in 6LiInSe2 neutron detector investigated by photo-induced current transient spectroscopy and photoluminescence

6LiInSe2 is a promising thermal neutron semiconductor detector material. The performance of the detector is affected by the carrier mobility-lifetime products. Therefore, defects that function as carrier recombination centers need to be identified. In this letter, characterization of defect levels in 6LiInSe2 by photo-induced current transient spectroscopy (PICTS) and photoluminescence is reported. PICTS measurements revealed electron-related defects located at 0.22, 0.36, and 0.55 eV and hole-related defects at 0.19, 0.30, and 0.73 eV. Free exciton and donor-acceptor pairs (DAP) emissions were observed. The PICTS defect level values are consistent with those extracted from DAP transitions.

Instrument Development and Gamma Spectroscopy With Strontium Iodide

Development of the Europium-doped Strontium Iodide scintillator, SrI2(Eu), involves advances in crystal growth, optics and readout methodology for prototype detectors. We have demonstrated energy resolution of 3% at 662 keV for a 26 cm3 SrI2(Eu) crystal, which is equivalent to the performance obtained with Cerium-doped Lanthanum Bromide of equivalent size. Compared to standard analog readout, use of a digital readout method allows improved energy resolution to be obtained with large volume SrI2(Eu) crystals. Comparative gamma spectra acquired with LaBr3(Ce) and NaI(Tl) quantitatively depict the value of the high resolution of SrI2(Eu) in discriminating closely spaced gamma lines for radioisotope identification applications.

Investigation of non-uniformity and inclusions in 6LiInSe2 utilizing laser induced breakdown spectroscopy (LIBS)

Impurity analysis and compositional distribution studies have been conducted on a crystal of LiInSe2, a compound semiconductor which recently has been shown to respond to ionizing radiation. IR microscopy and laser induced breakdown spectroscopy (LIBS) revealed the presence of inclusions within the crystal lattice. These precipitates were revealed to be alkali and alkaline earth elemental impurities with non-uniform spatial distribution in the crystal. LIBS compositional maps correlate the presence of these impurities with visual color differences in the crystal as well as a significant shift of the band gap. Further, LIBS revealed variation in the ratio of I-III-VI2 elemental constituents throughout the crystal. Analysis of compositional variation and impurities will aid in discerning optimal synthesis and crystal growth parameters to maximize the mobility-lifetime product and charge collection efficiency in the LiInSe2 crystal. Preliminary charge trapping calculations have also been conducted with the Monte Carlo N-particle eXtended (MCNPx) package indicating preferential trapping of holes during irradiation with thermal neutrons.

Neutron Imaging with Timepix Coupled Lithium Indium Diselenide

The material lithium indium diselenide, a single crystal neutron sensitive semiconductor, has demonstrated its capabilities as a high resolution imaging device. The sensor was prepared with a 55 μ m pitch array of gold contacts, designed to couple with the Timepix imaging ASIC. The resulting device was tested at the High Flux Isotope Reactor, demonstrating a response to cold neutrons when enriched in 95% 6 Li. The imaging system performed a series of experiments resulting in a <200 μ m resolution limit with the Paul Scherrer Institute (PSI) Siemens star mask and a feature resolution of 34 μ m with a knife-edge test. Furthermore, the system was able to resolve the University of Tennessee logo inscribed into a 3D printed 1 cm 3 plastic block. This technology marks the application of high resolution neutron imaging using a direct readout semiconductor.

Investigation of a Lithium Indium Diselenide detector for neutron transmission imaging

The development of a thermal neutron imaging sensor constructed with semiconducting lithium indium diselenide is presented. Both a computational and experimental investigation were conducted. In the computational investigation, it is shown that the imaging potential of Lithium Indium Diselenid (LISe) is excellent, even when using a large pixel pitch through the use of super sampling. In the experimental investigation, it was found that a single pixel LISe detector using detector super sampling shows a spatial variation in the count rate, which is a clear sign of imaging capability. However, a good image was not obtained in the first experiment and may be caused by a variety of experimental conditions. Finally, a search is still underway to find a suitable contact metal with good mechanical adhesion for wedge bonding.

Characterization of lithium indium diselenide

Lithium indium diselenide (6LiInSe2) has drawn interest in recent years as a thermal neutron detector due to its high volumetric thermal neutron detection efficiency. Enriched in 6Li, the single crystalline semiconductor can reach thermal neutron detection efficiencies approaching 80% at thickness of 0.5 cm. With a Q-value of 4.78 MeV, the material also offers neutrongamma discrimination capabilities. Identification and implementation of a contact scheme that is both robust and reproducible is important for its commercial potential. Thorough testing of a myriad of contact schemes yielded a viable Ohmic contact with sufficient adhesion to endure gold wire wedge bonding. Furthermore, characterization of the semiconducting properties, such as the charge carrier mobility-lifetime constant of this material as a radiation detector is important to identify the application space of this material. Using the single charge carrier approximation to the Hecht relation, the electron mobility-lifetime product was found to be on the order of 3.8-90 cm2/V with a mean ionization energy of 400 eV/e-h pair.