Brian D. Gerardot

Optical pumping of a single hole spin in a quantum dot

The spin of an electron is a natural two-level system for realizing a quantum bit in the solid state. For an electron trapped in a semiconductor quantum dot, strong quantum confinement highly suppresses the detrimental effect of phonon-related spin relaxation. However, this advantage is offset by the hyperfine interaction between the electron spin and the 104 to 106 spins of the host nuclei in the quantum dot. Random fluctuations in the nuclear spin ensemble lead to fast spin decoherence in about ten nanoseconds. Spin-echo techniques have been used to mitigate the hyperfine interaction, but completely cancelling the effect is more attractive. In principle, polarizing all the nuclear spins can achieve this but is very difficult to realize in practice. Exploring materials with zero-spin nuclei is another option, and carbon nanotubes, graphene quantum dots and silicon have been proposed. An alternative is to use a semiconductor hole. Unlike an electron, a valence hole in a quantum dot has an atomic p orbital which conveniently goes to zero at the location of all the nuclei, massively suppressing the interaction with the nuclear spins. Furthermore, in a quantum dot with strong strain and strong quantization, the heavy hole with spin-3/2 behaves as a spin-1/2 system and spin decoherence mechanisms are weak. We demonstrate here high fidelity (about 99 per cent) initialization of a single hole spin confined to a self-assembled quantum dot by optical pumping. Our scheme works even at zero magnetic field, demonstrating a negligible hole spin hyperfine interaction. We determine a hole spin relaxation time at low field of about one millisecond. These results suggest a route to the realization of solid-state quantum networks that can intra-convert the spin state with the polarization of a photon.

A Coherent Single-Hole Spin in a Semiconductor

A Hole New Approach Quantum dots can behave as artificial atoms, exhibiting a ladder of quantized energy levels with the number of electrons added to the dot being controllable. They are thus being extensively studied for application in the likes of quantum information processing strategies. However, the electrons interact with their environment and quickly lose their coherence properties. Brunner et al. (p. 70; see the Perspective by Kolodrubetz and Petta) now show that if the charge of the dot is manipulated so that it is positive; that is, populated with a single hole, then the coherence properties of the dot can be extended. The strategy of using holes instead of electrons may provide a solution to the decoherence problem. Manipulating holes instead of electrons results in the enhancement of the coherence properties of quantum dots. Semiconductors have uniquely attractive properties for electronics and photonics. However, it has been difficult to find a highly coherent quantum state in a semiconductor for applications in quantum sensing and quantum information processing. We report coherent population trapping, an optical quantum interference effect, on a single hole. The results demonstrate that a hole spin in a quantum dot is highly coherent.

Voltage-controlled optics of a quantum dot

We show how the optical properties of a single semiconductor quantum dot can be controlled with a small dc voltage applied to a gate electrode. We find that the transmission spectrum of the neutral exciton exhibits two narrow lines with approximately 2 mueV linewidth. The splitting into two linearly polarized components arises through an exchange interaction within the exciton. The exchange interaction can be turned off by choosing a gate voltage where the dot is occupied with an additional electron. Saturation spectroscopy demonstrates that the neutral exciton behaves as a two-level system. Our experiments show that the remaining problem for manipulating excitonic quantum states in this system is spectral fluctuation on a mueV energy scale.

The nonlinear Fano effect

The Fano effect is ubiquitous in the spectroscopy of, for instance, atoms, bulk solids and semiconductor heterostructures. It arises when quantum interference takes place between two competing optical pathways, one connecting the energy ground state and an excited discrete state, the other connecting the ground state with a continuum of energy states. The nature of the interference changes rapidly as a function of energy, giving rise to characteristically asymmetric lineshapes. The Fano effect is particularly important in the interpretation of electronic transport and optical spectra in semiconductors. Whereas Fano’s original theory applies to the linear regime at low power, at higher power a laser field strongly admixes the states and the physics becomes rich, leading, for example, to a remarkable interplay of coherent nonlinear transitions. Despite the general importance of Fano physics, this nonlinear regime has received very little attention experimentally, presumably because the classic autoionization processes, the original test-bed of Fano’s ideas, occur in an inconvenient spectral region, the deep ultraviolet. Here we report experiments that access the nonlinear Fano regime by using semiconductor quantum dots, which allow both the continuum states to be engineered and the energies to be rescaled to the near infrared. We measure the absorption cross-section of a single quantum dot and discover clear Fano resonances that we can tune with the device design or even in situ with a voltage bias. In parallel, we develop a nonlinear theory applicable to solid-state systems with fast relaxation of carriers. In the nonlinear regime, the visibility of the Fano quantum interferences increases dramatically, affording a sensitive probe of continuum coupling. This could be a unique method to detect weak couplings of a two-level quantum system (qubits), which should ideally be decoupled from all other states.

Manipulating exciton fine structure in quantum dots with a lateral electric field

The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero.

Hybridization of electronic states in quantum dots through photon emission

The self-assembly of semiconductor quantum dots has opened up new opportunities in photonics. Quantum dots are usually described as ‘artificial atoms’, because electron and hole confinement gives rise to discrete energy levels. This picture can be justified from the shell structure observed as a quantum dot is filled either with excitons (bound electron–hole pairs) or with electrons. The discrete energy levels have been most spectacularly exploited in single photon sources that use a single quantum dot as emitter. At low temperatures, the artificial atom picture is strengthened by the long coherence times of excitons in quantum dots, motivating the application of quantum dots in quantum optics and quantum information processing. In this context, excitons in quantum dots have already been manipulated coherently. We show here that quantum dots can also possess electronic states that go far beyond the artificial atom model. These states are a coherent hybridization of localized quantum dot states and extended continuum states: they have no analogue in atomic physics. The states are generated by the emission of a photon from a quantum dot. We show how a new version of the Anderson model that describes interactions between localized and extended states can account for the observed hybridization.

Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes

The progressive stacking of chalcogenide single layers gives rise to two-dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet the properties of some members of the chalcogenide family remain unexplored. Indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. Here, we reveal the lattice dynamics, optical and electronic properties of atomically thin InSe flakes prepared by micromechanical cleavage. Raman active modes stiffen or soften in the flakes depending on which electronic bonds are excited. A progressive blue-shift of the photoluminescence peaks is observed for decreasing flake thickness (as large as 0.2 eV for three single layers). First-principles calculations predict an even larger increase in the bandgap, 0.40 eV, for three single layers, and as much as 1.1 eV for a single layer. These results are promising from the point of view of the versatility of this material for optoelectronic applications at the nanometer scale and compatible with Si and III-V technologies.

Photon statistics from coupled quantum dots

We present an optical study of two closely stacked self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between nonidentical quantum dots and that the interaction is instead dominated by dipole-dipole coupling and phonon-assisted energy transfer processes.

Photonic crystal microcavities with self-assembled InAs quantum dots as active emitters

We report the use of self-assembled InAs quantum dots as active emitters in a photonic crystal microcavity. We have fabricated defect microcavities by removing 37 and 61 air holes from a triangular lattice in a photonic crystal membrane, and obtained quality factors in excess of 1000.

Solid immersion lens applications for nanophotonic devices

Solid immersion lens (SIL) microscopy combines the advantages of conventional microscopy with those of near-field techniques, and is being increasingly adopted across a diverse range of technologies and applications. A comprehensive overview of the state-of-the-art in this rapidly expanding subject is therefore increasingly relevant. Important benefits are enabled by SIL-focusing, including an improved lateral and axial spatial profiling resolution when a SIL is used in laser-scanning microscopy or excitation, and an improved collection efficiency when a SIL is used in a light-collection mode, for example in fluorescence micro-spectroscopy. These advantages arise from the increase in numerical aperture (NA) that is provided by a SIL. Other SIL-enhanced improvements, for example spherical-aberration-free sub-surface imaging, are a fundamental consequence of the aplanatic imaging condition that results from the spherical geometry of the SIL. Beginning with an introduction to the theory of SIL imaging, the unique properties of SILs are exposed to provide advantages in applications involving the interrogation of photonic and electronic nanostructures. Such applications range from the sub-surface examination of the complex three-dimensional microstructures fabricated in silicon integrated circuits, to quantum photoluminescence and transmission measurements in semiconductor quantum dot nanostructures.