Brian J. LeRoy

Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics of the low-density region at the Dirac point has been difficult because of disorder that leaves the graphene with local microscopic electron and hole puddles. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance. Here we use scanning tunnelling microscopy to show that graphene conforms to hBN, as evidenced by the presence of Moiré patterns. However, contrary to predictions, this conformation does not lead to a sizeable band gap because of the misalignment of the lattices. Moreover, local spectroscopy measurements demonstrate that the electron-hole charge fluctuations are reduced by two orders of magnitude as compared with those on silicon oxide. This leads to charge fluctuations that are as small as in suspended graphene, opening up Dirac point physics to more diverse experiments.Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point[1, 2]. However, accessing the physics of the low density region at the Dirac point has been difficult because of the presence of disorder which leaves the graphene with local microscopic electron and hole puddles[3–5], resulting in a finite density of carriers even at the charge neutrality point. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult[6, 7]. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance[8]. In this letter, we use scanning tunneling microscopy to show that graphene conforms to hBN, as evidenced by the presence of Moiré patterns in the topographic images. However, contrary to recent predictions[9, 10], this conformation does not lead to a sizable band gap due to the misalignment of the lattices. Moreover, local spectroscopy measurements demonstrate that the electron-hole charge fluctuations are reduced by two orders of magnitude as compared to those on silicon oxide. This leads to charge fluctuations which are as small as in suspended graphene[6], opening up Dirac point physics to more diverse experiments than are possible on freestanding devices. ∗Electronic address: leroy@physics.arizona.edu

Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure

Graphene, Gapped and Butterflied The remarkable transport properties of graphene, such as the high electron mobility, make it a promising material for electronics. However, unlike semiconductors such as silicon, graphenes electronic structure lacks a band gap, and a transistor made out of graphene would not have an “off” state. Hunt et al. (p. 1427, published online 16 May; see the Perspective by Fuhrer) modulated the electronic properties of graphene by building a heterostructure consisting of a graphene flake resting on hexagonal boron nitride (hBN), which has the same honeycomb structure as graphene, but consists of alternating boron and nitrogen atoms instead of carbons. The natural mismatch between the graphene and hBN lattices led to a moire pattern with a large wavelength, causing the opening of a band gap, the formation of an elusive fractional quantum Hall state, and, at high magnetic fields, a fractal phenomenon in the electronic structure called the Hofstadter butterfly. A band gap is observed in a monolayer graphene–hexagonal boron nitride heterostructure. [Also see Perspective by Fuhrer] van der Waals heterostructures constitute a new class of artificial materials formed by stacking atomically thin planar crystals. We demonstrated band structure engineering in a van der Waals heterostructure composed of a monolayer graphene flake coupled to a rotationally aligned hexagonal boron nitride substrate. The spatially varying interlayer atomic registry results in both a local breaking of the carbon sublattice symmetry and a long-range moiré superlattice potential in the graphene. In our samples, this interplay between short- and long-wavelength effects resulted in a band structure described by isolated superlattice minibands and an unexpectedly large band gap at charge neutrality. This picture is confirmed by our observation of fractional quantum Hall states at ±53 filling and features associated with the Hofstadter butterfly at ultrahigh magnetic fields.

Emergence of superlattice Dirac points in graphene on hexagonal boron nitride

It is well known that graphene deposited on hexagonal boron nitride produces moire patterns in scanning tunnelling microscopy images. The interaction that produces this pattern also produces a commensurate periodic potential that generates a set of Dirac points that are different from those of the graphene lattice itself.

Coherent branched flow in a two-dimensional electron gas.

Semiconductor nanostructures based on two-dimensional electron gases (2DEGs) could form the basis of future devices for sensing, information processing and quantum computation. Although electron transport in 2DEG nanostructures has been well studied, and many remarkable phenomena have already been discovered (for example, weak localization, quantum chaos, universal conductance fluctuations), fundamental aspects of the electron flow through these structures have so far not been clarified. However, it has recently become possible to image current directly through 2DEG devices using scanning probe microscope techniques. Here, we use such a technique to observe electron flow through a narrow constriction in a 2DEG—a quantum point contact. The images show that the electron flow from the point contact forms narrow, branching strands instead of smoothly spreading fans. Our theoretical study of this flow indicates that this branching of current flux is due to focusing of the electron paths by ripples in the background potential. The strands are decorated by interference fringes separated by half the Fermi wavelength, indicating the persistence of quantum mechanical phase coherence in the electron flow. These findings may have important implications for a better understanding of electron transport in 2DEGs and for the design of future nanostructure devices.Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG nanostructures and many remarkable phenomena have been discovered (e.g. weak localization, quantum chaos, universal conductance fluctuations)1,2 - yet a fundamental aspect of these devices, namely how electrons move through them, has never been clarified. Important details about the actual pattern of electron flow are not specified by statistical measures such as the mean free path. Scanned probe microscope (SPM) measurements allow spatial investigations of nanostructures, and it has recently become possible to directly image electron flow through 2DEG devices using newly developed SPM techniques3-13. Here we present SPM images of electron flow from a quantum point contact (QPC) which show unexpected dynamical channeling - the electron flow forms persistent, narrow, branching channels rather than smoothly spreading fans. Theoretical study of this flow, including electron scattering by impurities and donor atoms, shows that the channels are not due to deep valleys in the potential, but rather are caused by the indirect cumulative effect of small angle scattering. Surprisingly, the channels are decorated by interference fringes well beyond where the simplest thermal averaging arguments suggest they should be found. These findings may have important implications for 2DEG physics and for the design of future nanostructure devices.

Electrical generation and absorption of phonons in carbon nanotubes

The interplay between discrete vibrational and electronic degrees of freedom directly influences the chemical and physical properties of molecular systems. This coupling is typically studied through optical methods such as fluorescence, absorption and Raman spectroscopy. Molecular electronic devices provide new opportunities for exploring vibration–electronic interactions at the single molecule level. For example, electrons injected from a scanning tunnelling microscope tip into a metal can excite vibrational excitations of a molecule situated in the gap between tip and metal. Here we show how current directly injected into a freely suspended individual single-wall carbon nanotube can be used to excite, detect and control a specific vibrational mode of the molecule. Electrons tunnelling inelastically into the nanotube cause a non-equilibrium occupation of the radial breathing mode, leading to both stimulated emission and absorption of phonons by successive electron tunnelling events. We exploit this effect to measure a phonon lifetime of the order of 10 ns, corresponding to a quality factor of well over 10,000 for this nanomechanical oscillator.

Graphene on hexagonal boron nitride.

The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements.

Spatially resolved spectroscopy of monolayer graphene on SiO2

We carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on

Response of graphene to femtosecond high-intensity laser irradiation

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2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron and hole puddles that arise due to long-range intravalley scattering from intrinsic ripples in graphene and random-charged impurities. At low energy, we observe short-range intervalley scattering which we attribute to lattice defects. Our results demonstrate that the electronic properties of graphene are influenced by intrinsic ripples, defects, and the underlying

Lithography-Free Fabrication of High Quality Substrate- Supported and Freestanding Graphene Devices

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