Brian Puchala

Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires.

We report that Sb-decorated head-to-head (H-H) basal plane inversion domain boundaries (b-IDBs) lead to stable p-type conduction in Sb-doped ZnO nanowires (NWs) due to Sb and O codoping. Aberration-corrected Z-contrast scanning transmission electron microscopy shows that all of the Sb in the NWs is incorporated into H-H b-IDBs just under the (0001) NW growth surfaces and the (0001) bottom facets of interior voids. Density functional theory calculations show that the extra basal plane of O per H-H b-IDB makes them electron acceptors. NWs containing these defects exhibited stable p-type behavior in a single NW FET over 18 months. This new mechanism for p-type conduction in ZnO offers the potential of ZnO NW based p-n homojunction devices.

An energy basin finding algorithm for kinetic Monte Carlo acceleration

We present an energy basin finding algorithm for identifying the states in absorbing Markov chains used for accelerating kinetic Monte Carlo (KMC) simulations out of trapping energy basins. The algorithm saves groups of states corresponding to basic energy basins in which there is (i) a minimum energy saddle point and (ii) in moving away from the minimum the saddle point energies do not decrease between successive moves. When necessary, these groups are merged to help the system escape basins of basins. Energy basins are identified either as the system visits states, or by exploring surrounding states before the system visits them. We review exact and approximate methods for accelerating KMC simulations out of trapping energy basins and implement them within our algorithm. Its flexibility to store varying numbers of states, and ability to merge sets of saved states as the program runs, allows it to efficiently escape complicated trapping energy basins. Through simulations of vacancy-As cluster dissolution in Si, we demonstrate our algorithm can be several orders of magnitude faster than standard KMC simulations.

The continuum elastic and atomistic viewpoints on the formation volume and strain energy of a point defect

We discuss the roles of continuum linear elasticity and atomistic calculations in determining the formation volume and the strain energy of formation of a point defect in a crystal. Our considerations bear special relevance to defect formation under stress. The elasticity treatment is based on the Greens function solution for a center of contraction or expansion in an anisotropic solid. It makes possible the precise definition of a formation volume tensor and leads to an extension of Eshelbys [Proc. R. Soc. London Ser. A 241 (1226), 376] result for the work done by an external stress during the transformation of a continuum inclusion. Parameters necessary for a complete continuum calculation of elastic fields around a point defect are obtained by comparing with an atomistic solution in the far field. However, an elasticity result makes it possible to test the validity of the formation volume that is obtained via atomistic calculations under various boundary conditions. It also yields the correction term for formation volume calculated under these boundary conditions. Using two types of boundary conditions commonly employed in atomistic calculations, a comparison is also made of the strain energies of formation predicted by continuum elasticity and atomistic calculations. The limitations of the continuum linear elastic treatment are revealed by comparing with atomistic calculations of the formation volume and strain energies of small crystals enclosing point defects.

Elastic effects on relaxation volume tensor calculations

Relaxation volume tensors quantify the effect of stress on diffusion of crystal defects. Continuum linear elasticity predicts that calculations of these parameters using periodic boundary conditions do not suffer from systematic deviations due to elastic image effects and should be independent of the supercell size or symmetry. In practice, however, calculations of formation volume tensors of the

Collecting and Analyzing Microstructures in Three Dimensions: A Fully Automated Approach

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Thermodynamics of the Zr-O system from first-principles calculations

interstitial in Stillinger--Weber silicon demonstrate that changes in bonding at the defect affect the elastic moduli and result in system-size dependent relaxation volumes. These vary with the inverse of the system size. Knowing the rate of convergence permits accurate estimates of these quantities from modestly sized calculations. Furthermore, within the continuum linear elasticity assumptions, the average stress can be used to estimate the relaxation volume tensor from constant volume calculations.