Brian Youngblood

Nanowire spin torque oscillator driven by spin orbit torques

Spin torque from spin current applied to a nanoscale region of a ferromagnet can act as negative magnetic damping and thereby excite self-oscillations of its magnetization. In contrast, spin torque uniformly applied to the magnetization of an extended ferromagnetic film does not generate self-oscillatory magnetic dynamics but leads to reduction of the saturation magnetization. Here we report studies of the effect of spin torque on a system of intermediate dimensionality--a ferromagnetic nanowire. We observe coherent self-oscillations of magnetization in a ferromagnetic nanowire serving as the active region of a spin torque oscillator driven by spin orbit torques. Our work demonstrates that magnetization self-oscillations can be excited in a one-dimensional magnetic system and that dimensions of the active region of spin torque oscillators can be extended beyond the nanometre length scale.

Reduction of phase noise in nanowire spin orbit torque oscillators

Spin torque oscillators (STOs) are compact, tunable sources of microwave radiation that serve as a test bed for studies of nonlinear magnetization dynamics at the nanometer length scale. The spin torque in an STO can be created by spin-orbit interaction, but low spectral purity of the microwave signals generated by spin orbit torque oscillators hinders practical applications of these magnetic nanodevices. Here we demonstrate a method for decreasing the phase noise of spin orbit torque oscillators based on Pt/Ni80Fe20 nanowires. We experimentally demonstrate that tapering of the nanowire, which serves as the STO active region, significantly decreases the spectral linewidth of the generated signal. We explain the observed linewidth narrowing in the framework of the Ginzburg-Landau auto-oscillator model. The model reveals that spatial non-uniformity of the spin current density in the tapered nanowire geometry hinders the excitation of higher order spin-wave modes, thus stabilizing the single-mode generation regime. This non-uniformity also generates a restoring force acting on the excited self-oscillatory mode, which reduces thermal fluctuations of the mode spatial position along the wire. Both these effects improve the STO spectral purity.

Magnetic phase transitions in Ta/CoFeB/MgO multilayers

We study thin films and magnetic tunnel junction nanopillars based on Ta/Co20Fe60B20/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co20Fe60B20/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low temperatures to a conductive weak ferromagnet at high temperatures. This interfacial magnetic oxide is expected to have significant impact on the magnetic properties of CoFeB-based multilayers used in spin torque memories.

Signal propagation in dipole coupled nanomagnets for logic applications

As conventional Silicon-based transistors reach their scaling limits, novel devices for performing computations have emerged as alternatives to continue the improvements in information technology that have benefited society over the past 40 years. One candidate that has shown great promise recently is a device that performs logical computations using dipole coupled nanomagnets. In this paper, we discuss recent advances that have led to a greater understanding of signal propagation in nanomagnet arrays. In particular, we highlight recent experimental work towards the imaging of a propagating magnetic cascade.

Highly Textured IrMn 3 (111) Thin Films Grown by Magnetron Sputtering

Non-collinear spin ground states in metallic antiferromagnets can give rise to anomalous Hall effect, which enables magnetic state readout in antiferromagnetic spintronic devices. Here we report growth of highly textured films of a non-collinear antiferromagnet IrMn3 on MgO(111) substrates by magnetron sputtering. The films consist of epitaxial (111) twin domains rotated by 60 degrees within the film plane. The films exhibit partial L12 ordering that supports the non-collinear T1 spin structure predicted to give rise to anomalous Hall effect. An MgO buffer layer evaporated onto the substrate increases the L12 order parameter from 0.4 to 0.75 but destroys the (111) crystallographic texture.