Bui D. Hoi
University of Education, Winneba
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Publication
Featured researches published by Bui D. Hoi.
Journal of Applied Physics | 2018
Chuong V. Nguyen; Nguyen N. Hieu; Do Muoi; C.A. Duque; E. Feddi; Hieu V. Nguyen; Le T.T. Phuong; Bui D. Hoi; Huynh V. Phuc
In this work, using the compact density matrix approach, we study the linear and nonlinear magneto-optical properties of monolayer molybdenum disulfide (MoS2) via an investigation of the absorption coefficients (MOACs) and refractive index changes (RICs). The results are presented as functions of photon energy and external magnetic field. Our results show that the MOACs and the RICs appear as a series of peaks in the inter-band transitions between Landau levels, while the intra-band transitions result in only one peak. Because of the strong spin-orbit coupling, the peaks caused by the spin-up and -down states are different. With the increase in the magnetic field, both MOACs and RICs give a blue-shift and reduce in their amplitudes. These results suggest a potential application of monolayer MoS2 in the optoelectronic technology, magneto-optical, valleytronic, and spintronic devices.In this work, using the compact density matrix approach, we study the linear and nonlinear magneto-optical properties of monolayer molybdenum disulfide (MoS2) via an investigation of the absorption coefficients (MOACs) and refractive index changes (RICs). The results are presented as functions of photon energy and external magnetic field. Our results show that the MOACs and the RICs appear as a series of peaks in the inter-band transitions between Landau levels, while the intra-band transitions result in only one peak. Because of the strong spin-orbit coupling, the peaks caused by the spin-up and -down states are different. With the increase in the magnetic field, both MOACs and RICs give a blue-shift and reduce in their amplitudes. These results suggest a potential application of monolayer MoS2 in the optoelectronic technology, magneto-optical, valleytronic, and spintronic devices.
Journal of Electronic Materials | 2018
Huynh V. Phuc; Nguyen N. Hieu; Bui D. Hoi; Nguyen Van Hieu; Tran V. Thu; Nguyen M. Hung; V. V. Ilyasov; N. A. Poklonski; Chuong V. Nguyen
In this paper, we studied the electronic properties, effective masses, and carrier mobility of monolayer
Journal of Electronic Materials | 2018
Huynh V. Phuc; Vu V. Tuan; Nguyen N. Hieu; V. V. Ilyasov; Igor A. Fedorov; Bui D. Hoi; Le T.T. Phuong; Nguyen Van Hieu; E. Feddi; Chuong V. Nguyen
AIP Advances | 2018
Khang D. Pham; Huynh V. Phuc; Nguyen N. Hieu; Bui D. Hoi; Chuong V. Nguyen
hbox {MoS}_2
Superlattices and Microstructures | 2017
Huynh V. Phuc; Nguyen N. Hieu; Bui D. Hoi; Le T.T. Phuong; Nguyen Van Hieu; Chuong V. Nguyen
Surface Science | 2018
Huynh V. Phuc; Nguyen N. Hieu; Bui D. Hoi; Le T.T. Phuong; Chuong V. Nguyen
MoS2 using density functional theory calculations. The carrier mobility was considered by means of ab initio calculations using the Boltzmann transport equation coupled with deformation potential theory. The effects of mechanical biaxial strain on the electronic properties, effective mass, and carrier mobility of monolayer
Superlattices and Microstructures | 2018
Nguyen N. Hieu; V. V. Ilyasov; Tuan V. Vu; N. A. Poklonski; Huynh V. Phuc; Le T.T. Phuong; Bui D. Hoi; Chuong V. Nguyen
Physical Chemistry Chemical Physics | 2018
Huynh V. Phuc; Nguyen N. Hieu; Bui D. Hoi; Chuong V. Nguyen
hbox {MoS}_2
Superlattices and Microstructures | 2018
Khang D. Pham; Nguyen N. Hieu; V. V. Ilyasov; Huynh V. Phuc; Bui D. Hoi; E. Feddi; Nguyen V. Thuan; Chuong V. Nguyen
Physica E-low-dimensional Systems & Nanostructures | 2019
N.V.Q. Binh; Nguyen N. Hieu; Chuong V. Nguyen; Huynh V. Phuc; Bui D. Hoi; Le T.T. Phuong; Tran Cong Phong
MoS2 were also investigated. It is demonstrated that the electronic properties, such as band structure and density of state, of monolayer