Bum-Goo Cho

Numerical simulation of on thermal nanoimprint lithography (NIL) process

Nanoimprint lithography (NIL) relies on a direct mechanical deformation of the resist material and can therefore achieve resolutions beyond the limitations which are set by a light diffraction or a beam scattering. In addition, NIL is expected to realize a low cost and high-throughput production. In this work, we modeled the NIL process and employed commercially available software, COMSOL Multi-physics, for the implementation of our model. In this paper, we report the stress distribution of the polymer deformation process on the imprinting pressure.

Atomistic modeling on carbon co-implant with silicon pre-amorphization implant technique

In this paper, boron transient enhanced diffusion in silicon pre-amorphization implant (PAI) and carbon co-implant PAI is investigated via kinetic Monte Carlo approach. The damages induced by Si-PAI and carbon co-implant are calculated. Boron implantation and subsequent annealing are thereafter performed. The simulation implies that carbon co-implant PAI reduces the amount of interstitial near the surface when compared with Si-PAI and that carbon co-implant with silicon PAI reduced TED effectively.

Ab-initio Calculations of Stress Effects on Indium Diffusion in Uniaxally Strained Silicon

This paper investigates tensile uniaxial strain effects on indium atom migration for researching shallow junction devices by using ab-initio calculation. This study reveals which tensile strain on silicon substrate affect the total and migration energy of In-Si complexes.