Byeol Han

Atomic Layer Deposition of Silicon Oxide Thin Films by Alternating Exposures to Si2Cl6 and O3

We report the process for the atomic layer deposition (ALD) of silicon dioxide thin films on a silicon wafer by alternating exposures to Si 2 Cl 6 and O 3 . The deposition was governed by a self-limiting ALD reaction at 403-453°C, and the growth rate at 453°C was saturated at 0.32 nm/cycle for Si 2 Cl 6 exposures over 1 X 10 8 L. However, at 471°C or higher temperatures, the thermal decomposition of Si 2 Cl 6 and the oxidation of Si by O 3 dominated the deposition, resulting in high growth rates and Si-rich films. The ALD films exhibited excellent electrical properties that were equivalent to those of low-pressure chemical vapor deposition films.

Atomic layer deposition of cobalt oxide thin films using cyclopentadienylcobalt dicarbonyl and ozone at low temperatures

The authors report the atomic layer deposition (ALD) of cobalt oxide thin films at 50–150 °C using alternating exposures to cyclopentadienylcobalt dicarbony [CpCo(CO)2] and ozone. The growth rates were 0.08–0.11 nm/cycle and the ALD cobalt oxide films showed excellent step coverage. With increasing substrate temperature to 200 °C, however, the growth rate sharply increased and cobalt-rich film was deposited owing to thermal decomposition of the cobalt precursor. The reaction of the cobalt precursor molecule with the growing film surface was investigated by in situ quartz crystal microbalance (QCM), and the QCM result also indicates that CpCo(CO)2 thermally decomposes to cobalt on the growth surface at 200 °C.

Atomic layer deposition of copper thin film using Cu II (diketoiminate) 2 and H 2

We report for the first time the atomic layer deposition (ALD) of Cu film using alternating exposures to Cu^II(diketoiminate)<inf>2</inf> and H<inf>2</inf>. The influences of deposition temperature on the properties of the deposited film were investigated at 140–220°C. Minimum sheet resistance and continuous film surface on Pt substrate were obtained at 180–200°C. The resistivity of 17-nm-thick ALD Cu film was ∼7 µΩ·cm.