Byeonghoon Kim

Magnetic Characteristics of Copper Ion-Modified DNA Thin Films

We developed a new method of fabricating a divalent copper ion (Cu2+) modified DNA thin film on a glass substrate and studied its magnetic properties. We evaluated the coercive field (Hc), remanent magnetization (Mr), susceptibility (χ), and thermal variation of magnetization with varying Cu2+ concentrations [Cu2+] resulting in DNA thin films. Although thickness of the two dimensional DNA thin film with Cu2+ in dry state was extremely thin (0.6 nm), significant ferromagnetic signals were observed at room temperature. The DNA thin films with a [Cu2+] near 5 mM showed the distinct S-shape hysteresis with appreciable high Hc, Mr and χ at low field (≤600 Oe). These were primarily caused by the presence of small magnetic dipoles of Cu2+ coordination on the DNA molecule, through unpaired d electrons interacting with their nearest neighbors and the inter-exchange energy in the magnetic dipoles making other neighboring dipoles oriented in the same direction.

A novel nanometric DNA thin film as a sensor for alpha radiation

The unexpected nuclear accidents have provided a challenge for scientists and engineers to develop sensitive detectors, especially for alpha radiation. Due to the high linear energy transfer value, sensors designed to detect such radiation require placement in close proximity to the radiation source. Here we report the morphological changes and optical responses of artificially designed DNA thin films in response to exposure to alpha radiation as observed by an atomic force microscope, a Raman and a reflectance spectroscopes. In addition, we discuss the feasibility of a DNA thin film as a radiation sensing material. The effect of alpha radiation exposure on the DNA thin film was evaluated as a function of distance from an 241Am source and exposure time. Significant reflected intensity changes of the exposed DNA thin film suggest that a thin film made of biomolecules can be one of promising candidates for the development of online radiation sensors.

DNA nanotechnology: a future perspective.

In addition to its genetic function, DNA is one of the most distinct and smart self-assembling nanomaterials. DNA nanotechnology exploits the predictable self-assembly of DNA oligonucleotides to design and assemble innovative and highly discrete nanostructures. Highly ordered DNA motifs are capable of providing an ultra-fine framework for the next generation of nanofabrications. The majority of these applications are based upon the complementarity of DNA base pairing: adenine with thymine, and guanine with cytosine. DNA provides an intelligent route for the creation of nanoarchitectures with programmable and predictable patterns. DNA strands twist along one helix for a number of bases before switching to the other helix by passing through a crossover junction. The association of two crossovers keeps the helices parallel and holds them tightly together, allowing the assembly of bigger structures. Because of the DNA molecules unique and novel characteristics, it can easily be applied in a vast variety of multidisciplinary research areas like biomedicine, computer science, nano/optoelectronics, and bionanotechnology.

Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors

A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was developed. The IGZO TFT had a field-effect mobility (μFET) of 0.07 cm2/Vs and an on-current (Ion) value of about 2.68 μA. A dry-wet method was employed to immobilize double-crossover (DX) DNA onto the IGZO surface. After DX DNA immobilization, significant decreases in μFET (0.02 cm2/Vs) and Ion (0.247 μA) and a positive shift of threshold voltage were observed. These results were attributed to the negatively charged phosphate groups on the DNA backbone, which generated electrostatic interactions in the TFT device.A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was developed. The IGZO TFT had a field-effect mobility (μFET) of 0.07 cm2/Vs and an on-current (Ion) value of about 2.68 μA. A dry-wet method was employed to immobilize double-crossover (DX) DNA onto the IGZO surface. After DX DNA immobilization, significant decreases in μFET (0.02 cm2/Vs) and Ion (0.247 μA) and a positive shift of threshold voltage were observed. These results were attributed to the negatively charged phosphate groups on the DNA backbone, which generated electrostatic interactions in the TFT device.

A two-dimensional DNA lattice implanted polymer solar cell

A double crossover tile based artificial two-dimensional (2D) DNA lattice was fabricated and the dry-wet method was introduced to recover an original DNA lattice structure in order to deposit DNA lattices safely on the organic layer without damaging the layer. The DNA lattice was then employed as an electron blocking layer in a polymer solar cell causing an increase of about 10% up to 160% in the power conversion efficiency. Consequently, the resulting solar cell which had an artificial 2D DNA blocking layer showed a significant enhancement in power conversion efficiency compared to conventional polymer solar cells. It should be clear that the artificial DNA nanostructure holds unique physical properties that are extremely attractive for various energy-related and photonic applications.

Energy Band Gap and Optical Transition of Metal Ion Modified Double Crossover DNA Lattices

We report on the energy band gap and optical transition of a series of divalent metal ion (Cu(2+), Ni(2+), Zn(2+), and Co(2+)) modified DNA (M-DNA) double crossover (DX) lattices fabricated on fused silica by the substrate-assisted growth (SAG) method. We demonstrate how the degree of coverage of the DX lattices is influenced by the DX monomer concentration and also analyze the band gaps of the M-DNA lattices. The energy band gap of the M-DNA, between the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), ranges from 4.67 to 4.98 eV as judged by optical transitions. Relative to the band gap of a pristine DNA molecule (4.69 eV), the band gap of the M-DNA lattices increases with metal ion doping up to a critical concentration and then decreases with further doping. Interestingly, except for the case of Ni(2+), the onset of the second absorption band shifts to a lower energy until a critical concentration and then shifts to a higher energy with further increasing the metal ion concentration, which is consistent with the evolution of electrical transport characteristics. Our results show that controllable metal ion doping is an effective method to tune the band gap energy of DNA-based nanostructures.

A 2D DNA lattice as an ultrasensitive detector for beta radiations.

There is growing demand for the development of efficient ultrasensitive radiation detectors to monitor the doses administered to individuals during therapeutic nuclear medicine which is often based on radiopharmaceuticals, especially those involving beta emitters. Recently biological materials are used in sensors in the nanobio disciplines due to their abilities to detect specific target materials or sites. Artificially designed two-dimensional (2D) DNA lattices grown on a substrate were analyzed after exposure to pure beta emitters, (90)Sr-(90)Y. We studied the Raman spectra and reflected intensities of DNA lattices at various distances from the source with different exposure times. Although beta particles have very low linear energy transfer values, the significant physical and chemical changes observed throughout the extremely thin, ∼0.6 nm, DNA lattices suggested the feasibility of using them to develop ultrasensitive detectors of beta radiations.

Electrical responses of artificial DNA nanostructures on solution-processed In-Ga-Zn-O thin-film transistors with multistacked active layers.

We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use of multistacked active layers. Our IGZO TFT had a turn-on voltage (V(on)) of -0.8 V and a subthreshold swing (SS) value of 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the IGZO surface, after which an anomalous hump effect accompanying a significant decrease in V(on) (-13.6 V) and degradation of SS (1.29 V/decade) was observed. This sensing behavior was attributed to the middle interfaces of the multistacked active layers and the negatively charged phosphate groups on the DNA backbone, which generated a parasitic path in the TFT device. These results compared favorably with those reported for conventional field-effect transistor-based DNA sensors with remarkable sensitivity and stability.

Growth and restoration of a T-tile-based 1D DNA nanotrack

We designed an artificial one-dimensional DNA nanotrack that contains two T-motifs. It can be fabricated in a free solution and with a mica-assisted growth process. Also, we introduced a dry and wet method for the restoration of DNA nanostructures in order for them to be used in multiple applications.

Ternary and senary representations using DNA double-crossover tiles

The information capacity of DNA double-crossover (DX) tiles was successfully increased beyond a binary representation to higher base representations. By controlling the length and the position of DNA hairpins on the DX tile, ternary and senary (base-3 and base-6) digit representations were realized and verified by atomic force microscopy. Also, normal mode analysis was carried out to study the mechanical characteristics of each structure.