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Dive into the research topics where Byong Man Kim is active.

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Featured researches published by Byong Man Kim.


Applied Physics Letters | 2000

Fabrication of a Josephson junction using an atomic force microscope

Insang Song; Byong Man Kim; Gwangseo Park

A Josephson junction was fabricated by inducing a selective surface modification on a YBa2Cu3O7−y strip with an atomic force microscope (AFM). The surface modification in the field of conductive AFM tip results in the controlled growth of protrusions across the entire strip. By properly regulating the extent of AFM modification, we achieved a Josephson junction. The self-radiation power of about 50 pW at a resonant frequency of 22 GHz was detected from this junction, which is in excellent agreement with the Josephson frequency-voltage relationship.


Applied Physics Letters | 2009

Scanning probe charge reading of ferroelectric domains

Byong Man Kim; Donald Edward Adams; Quan Tran; Qing Ma; Valluri Rao

A scanning probe charge-detection technique based on direct piezoelectric effect is demonstrated to read alternating bit polarizations in a ferroelectric media The bit signal is generated by spatially modulating charges interacting with a probe tip scanning in contact with the media. A periodicity of the bits is used with an appropriate scan speed to modulate the signal frequency. A signal-to-noise ratio of 10 dB has been achieved for a contact force of 100 nN. The modulation of the bit signal frequency into the 2 kHz data rate is achieved by coupling 0.4 μm spacing between alternating polarizations with scanning speed of 1.6 mm/s.


Japanese Journal of Applied Physics | 2001

In-Situ Electrical Study of a Reversible Surface Modification and a Nanomachining of Gold Microstrips by the Voltage-Biased Atomic Force Microscope Tip in Air

Byong Man Kim; Yo-Sep Min; Nae-Sung Lee; Jung Hyun Sok; Moon Kyung Kim; Soo Doo Chae; Won Il Ryu; Hee Soon Chae

We report on a reversible polymerization of ambient carbonaceous deposits on the surface of gold microstrips by means of a voltage-biased atomic force microscope tip in air. This approach is found capable of controlled writing, erasing, and rewriting of carbon-rich deposits with sizes in nanometer regime. Physical mechanism for this reversible patterning is proposed to be the current-induced electrochemical process. In addition, we introduce a novel nanomachining technique based on an electric field enhanced cutting process.


Archive | 2010

Nanochip: A MEMS-Based Ultra-High Data Density Memory Device

Nickolai Belov; Donald Edward Adams; Peter David Ascanio; Tsung-Kuan Chou; John Heck; Byong Man Kim; Gordon Knight; Qing Ma; Jong-Seung Park; Valluri Rao; Robert N. Stark; Ghassan Tchelepi

The paper provides an overview of a probe storage device development. The main results are related to successful development of ferroelectric memory, MEMS micro-mover with large range of motion and an array of cantilevers with sharp tips (read–write heads), demonstrating wear resistance of the tips, integration of memory material into the MEMS process, integration of MEMS cantilever process with CMOS, development of analog front end electronics, including read channel and servo system, and a controller for a storage device.


Molecular Crystals and Liquid Crystals | 2001

Reversible patterning of ambient carbon-rich deposits on a gold surface by means of a voltage-biased atomic force microscopy

Byong Man Kim; Mi Young Kim; Yo-Sep Min; Moon Kyung Kim; Jung Hyun Sok; Jo-won Lee

Abstract We report on a reversible patterning of ambient carbon-rich deposits on a gold surface by using a voltage-biased atomic force microscope tip in air. This approach is capable of controlled writing, erasing, and rewriting of carbon-rich deposits with sizes in nanometer regime. Physical mechanism for this reversible patterming is proposed to be the current-induced electrochemical process.


Archive | 2007

Method and media for improving ferroelectric domain stability in an information storage device

Valluri Rao; Li-Peng Wang; Qing Ma; Byong Man Kim


Microelectronic Engineering | 2010

Ultra-high density MEMS probe memory device

John Heck; Donald Edward Adams; Nickolai Belov; Tsung-Kuan A. Chou; Byong Man Kim; Kevin Kornelsen; Qing Ma; Valluri Rao; Simone Severi; Dean Spicer; Ghassan Tchelepi; Ann Witvrouw


Chemical Vapor Deposition | 2001

Liquid Source‐MOCVD of BaxSr1–xTiO3 (BST) Thin Films with a N‐alkoxy‐β‐ketoiminato Titanium Complex

Yo-Sep Min; Young-Jin Cho; Daesig Kim; Jung-hyun Lee; Byong Man Kim; Sun Kwon Lim; Ik Mo Lee; Wan In Lee


Archive | 2008

MEDIA WITH TETRAGONALLY-STRAINED RECORDING LAYER HAVING IMPROVED SURFACE ROUGHNESS

Byong Man Kim; Jingwei Li; Pu Yu; Donald Edward Adams; Ying-Hao Chu; Yevgeny V. Anoikin; R. Ramesh; Li-Peng Wang


Archive | 2007

METHODS OF TREATING A SURFACE OF A FERROELECTRIC MEDIA

Byong Man Kim; Donald Edward Adams; Brett Eldon Huff; Yevgeny V. Anoikin; Robert N. Stark

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