Byong Man Kim
Samsung
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Byong Man Kim.
Applied Physics Letters | 2000
Insang Song; Byong Man Kim; Gwangseo Park
A Josephson junction was fabricated by inducing a selective surface modification on a YBa2Cu3O7−y strip with an atomic force microscope (AFM). The surface modification in the field of conductive AFM tip results in the controlled growth of protrusions across the entire strip. By properly regulating the extent of AFM modification, we achieved a Josephson junction. The self-radiation power of about 50 pW at a resonant frequency of 22 GHz was detected from this junction, which is in excellent agreement with the Josephson frequency-voltage relationship.
Applied Physics Letters | 2009
Byong Man Kim; Donald Edward Adams; Quan Tran; Qing Ma; Valluri Rao
A scanning probe charge-detection technique based on direct piezoelectric effect is demonstrated to read alternating bit polarizations in a ferroelectric media The bit signal is generated by spatially modulating charges interacting with a probe tip scanning in contact with the media. A periodicity of the bits is used with an appropriate scan speed to modulate the signal frequency. A signal-to-noise ratio of 10 dB has been achieved for a contact force of 100 nN. The modulation of the bit signal frequency into the 2 kHz data rate is achieved by coupling 0.4 μm spacing between alternating polarizations with scanning speed of 1.6 mm/s.
Japanese Journal of Applied Physics | 2001
Byong Man Kim; Yo-Sep Min; Nae-Sung Lee; Jung Hyun Sok; Moon Kyung Kim; Soo Doo Chae; Won Il Ryu; Hee Soon Chae
We report on a reversible polymerization of ambient carbonaceous deposits on the surface of gold microstrips by means of a voltage-biased atomic force microscope tip in air. This approach is found capable of controlled writing, erasing, and rewriting of carbon-rich deposits with sizes in nanometer regime. Physical mechanism for this reversible patterning is proposed to be the current-induced electrochemical process. In addition, we introduce a novel nanomachining technique based on an electric field enhanced cutting process.
Archive | 2010
Nickolai Belov; Donald Edward Adams; Peter David Ascanio; Tsung-Kuan Chou; John Heck; Byong Man Kim; Gordon Knight; Qing Ma; Jong-Seung Park; Valluri Rao; Robert N. Stark; Ghassan Tchelepi
The paper provides an overview of a probe storage device development. The main results are related to successful development of ferroelectric memory, MEMS micro-mover with large range of motion and an array of cantilevers with sharp tips (read–write heads), demonstrating wear resistance of the tips, integration of memory material into the MEMS process, integration of MEMS cantilever process with CMOS, development of analog front end electronics, including read channel and servo system, and a controller for a storage device.
Molecular Crystals and Liquid Crystals | 2001
Byong Man Kim; Mi Young Kim; Yo-Sep Min; Moon Kyung Kim; Jung Hyun Sok; Jo-won Lee
Abstract We report on a reversible patterning of ambient carbon-rich deposits on a gold surface by using a voltage-biased atomic force microscope tip in air. This approach is capable of controlled writing, erasing, and rewriting of carbon-rich deposits with sizes in nanometer regime. Physical mechanism for this reversible patterming is proposed to be the current-induced electrochemical process.
Archive | 2007
Valluri Rao; Li-Peng Wang; Qing Ma; Byong Man Kim
Microelectronic Engineering | 2010
John Heck; Donald Edward Adams; Nickolai Belov; Tsung-Kuan A. Chou; Byong Man Kim; Kevin Kornelsen; Qing Ma; Valluri Rao; Simone Severi; Dean Spicer; Ghassan Tchelepi; Ann Witvrouw
Chemical Vapor Deposition | 2001
Yo-Sep Min; Young-Jin Cho; Daesig Kim; Jung-hyun Lee; Byong Man Kim; Sun Kwon Lim; Ik Mo Lee; Wan In Lee
Archive | 2008
Byong Man Kim; Jingwei Li; Pu Yu; Donald Edward Adams; Ying-Hao Chu; Yevgeny V. Anoikin; R. Ramesh; Li-Peng Wang
Archive | 2007
Byong Man Kim; Donald Edward Adams; Brett Eldon Huff; Yevgeny V. Anoikin; Robert N. Stark