Byoungnam Park

Over 40 cd/A Efficient Green Quantum Dot Electroluminescent Device Comprising Uniquely Large-Sized Quantum Dots

Green CdSe@ZnS quantum dots (QDs) of 9.5 nm size with a composition gradient shell are first prepared by a single-step synthetic approach, and then 12.7 nm CdSe@ZnS/ZnS QDs, the largest among ZnS-shelled visible-emitting QDs available to date, are obtained through the overcoating of an additional 1.6 nm thick ZnS shell. Two QDs of CdSe@ZnS and CdSe@ZnS/ZnS are incorporated into the solution-processed hybrid QD-based light-emitting diode (QLED) structure, where the QD emissive layer (EML) is sandwiched by poly(9-vinlycarbazole) and ZnO nanoparticles as hole and electron-transport layers, respectively. We find that the presence of an additional ZnS shell makes a profound impact on device performances such as luminance and efficiencies. Compared to CdSe@ZnS QD-based devices the efficiencies of CdSe@ZnS/ZnS QD-based devices are overwhelmingly higher, specifically showing unprecedented values of peak current efficiency of 46.4 cd/A and external quantum efficiency of 12.6%. Such excellent results are likely attributable to a unique structure in CdSe@ZnS/ZnS QDs with a relatively thick ZnS outer shell as well as a well-positioned intermediate alloyed shell, enabling the effective suppression of nonradiative energy transfer between closely packed EML QDs and Auger recombination at charged QDs.

Ambipolar rubrene thin film transistors

We report ambipolar field-effect transistors fabricated from rubrene thin films on SiO2∕Si substrates. The mobilities of both holes and electrons were extremely low, ranging from 2.2×10−6to8.0×10−6cm2∕Vs, due to disorder in the films. Rubrene forms three-dimensional circular islands even at extremely low coverages and x-ray diffraction observations suggest that the film is amorphous. The formation of the conducting channel of the transistor follows the geometric percolation of rubrene islands.

Orientation of pentacene molecules on SiO2: From a monolayer to the bulk

Near edge x-ray absorption fine structure (NEXAFS) spectroscopy is used to study the orientation of pentacene molecules within thin films on SiO2 for thicknesses ranging from monolayers to the bulk (150 nm). The spectra exhibit a strong polarization dependence of the pi* orbitals for all films, which indicates that the pentacene molecules are highly oriented. At all film thicknesses the orientation varies with the rate at which pentacene molecules are deposited, with faster rates favoring a thin film phase with different tilt angles and slower rates leading to a more bulklike orientation. Our NEXAFS results extend previous structural observations to the monolayer regime and to lower deposition rates. The NEXAFS results match crystallographic data if a finite distribution of the molecular orientations is included. Damage to the molecules by hot electrons from soft x-ray irradiation eliminates the splitting between nonequivalent pi* orbitals, indicating a breakup of the pentacene molecule.

Anisotropic Assembly of Conjugated Polymer Nanocrystallites for Enhanced Charge Transport

The anisotropic assembly of P3HT nanocrystallites into longer nanofibrillar structures was demonstrated via sequential UV irradiation after ultrasonication to the pristine polymer solutions. The morphology of resultant films was studied by atomic force microscopy (AFM), and quantitative analysis of intra- and intermolecular ordering of polymer chains was performed by means of static absorption spectroscopy and quantitative modeling. Consequently, the approach to treat the precursor solution enhanced intra- and intermolecular ordering and reduced the incidence of grain boundaries within P3HT films, which contributed to the excellent charge carrier transport characteristics of the corresponding films (μ ≈ 12.0 × 10(-2) cm(2) V(-1) s(-1) for 96% RR P3HT).

Photoinduced Anisotropic Assembly of Conjugated Polymers in Insulating Polymer Blends

Low-dose UV irradiation of poly(3-hexylthiophene) (P3HT)-insulating polymer (polystyrene (PS) or polyisobutylene (PIB)) blend solutions led to the formation of highly ordered P3HT nanofibrillar structures in solidified thin films. The P3HT nanofibers were effectively interconnected through P3HT islands phase-separated from insulating polymer regions in blend films comprising a relatively low fraction of P3HT. Films prepared with a P3HT content as low as 5 wt % exhibited excellent macroscopic charge transport characteristics. The impact of PS on P3HT intramolecular and intermolecular interactions was systematically investigated. The presence of PS chains appeared to assist in the UV irradiation process of the blend solutions to facilitate molecular interactions of the semiconductor component, and to enhance P3HT chain interactions during spin coating because of relatively unfavorable P3HT-PS chain interactions. However, P3HT lamellar packing was hindered in the presence of PS chains, because of favorable hydrophobic interactions between the P3HT hexyl substituents and the PS chains. As a result, the lamellar packing d-spacing increased, and the coherence length corresponding to the lamellar packing decreased, as the amount of PS in the blend films increased.

Enhanced hole mobility in ambipolar rubrene thin film transistors on polystyrene

We report amorphous rubrene thin film transistors with a polystyrene intermediate layer on the SiO2 gate dielectric that have hole mobilities up to 0.01cm2∕Vs. This improvement by two orders of magnitude over devices formed on SiO2 alone occurs without the crystallization of rubrene. The enhanced charge transport is a result of the more planar growth and subsequent better geometrical connection of the first molecular layers of rubrene. Ambipolar conduction in the rubrene suggests that polystyrene minimizes the concentration of interfacial electron trap states.

Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation

Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors.

Exciton dissociation and charge trapping at poly(3-hexylthiophene)/phenyl-C61-butyric acid methyl ester bulk heterojunction interfaces: Photo-induced threshold voltage shifts in organic field-effect transistors and solar cells

Photoinduced charge transfer at an electron donor/acceptor interface is one of the most crucial processes in determining the power conversion efficiency of organic solar cell devices. Here, we address exciton dissociation and charge carrier trapping at poly(3-hexylthiophene) (P3HT)/phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction interfaces electrically using a field effect transistor (FET). With a P3HT/PCBM composite film, we elucidated exciton dissociation and charge carrier recombination assisted by localized electronic states at the P3HT/PCBM interface via photoinduced threshold voltage shift measurements with respect to wavelength using FETs in combination with organic solar cell devices. Interestingly, the combination of light coupled with a significant quantity of PCBM within the film was required to observe ambipolar charge transport in P3HT/PCBM FETs. This phenomenon was addressed by filling of electron traps associated with PCBM under illumination and formation of the conducting p...

Rheological properties of Ag suspended fluid for inkjet printing

Rheological characterization of inks for the inkjet printing application has been considered to be essential with dissemination of applying the inkjet printing technology into many related industries. In this study, the high concentrated Ag suspension was prepared using poly(acrylic acid) as both a polyelectrolyte and a polymeric dispersant, and rheological properties of the suspension such as shear stress, shear viscosity, and dynamic moduli were examined using a rotational rheometer. The difference of rheological properties was investigated with different concentrations of the polyelectrolyte. The shear thinning effects and yield behavior of suspension were analyzed using rheological constitutive equations of state.

Control of Molecular Ordering, Alignment, and Charge Transport in Solution-Processed Conjugated Polymer Thin Films

Morphology of conjugated polymers is a critical factor that significantly affects intrinsic charge transport characteristics and in turn performance of polymer-based devices. Morphological defects including misaligned crystalline grains and grain boundaries significantly impede efficient charge hopping between transport sites, resulting in degradation of device performance. Therefore, one important challenge is to control morphology of active polymer thin-films for achieving high performance flexible electronic devices. In the past decade, significant progress has been achieved in morphology control of conjugated polymer thin-films using solution-based processing techniques. This review focuses on recent advances in processing strategies that can tune the morphologies and thus impact charge transport properties of conjugated polymer thin films. Of the available processing strategies, polymer solution treatments and film deposition techniques will be mainly highlighted. The correlation between processing conditions, active layer morphologies, and device performance will be also be discussed.