Byung-Joon Baek

Numerical analysis for the growth of GaN layer in MOCVD reactor

The axi-symmetric vertical reactor is a classical reactor configuration for the growth of compound semiconductors by MOCVD. In the present study, the modified reactor is developed to produce uniform and large-volume epitaxial deposition of gallium nitride (GaN). A comprehensive knowledge of the flow, thermal and concentration fields, as well as gas surface reaction, is necessary to develop a CVD reactor. The full elliptic governing equations for continuity, momentum, energy and chemical species are solved numerically. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactant, and deposition rate uniformity. As results, inlet flow rate, inclination angle of wall and inlet design are proposed for optimum operational conditions.

Dynamic spectro-polarimeter based on a modified Michelson interferometric scheme

A simple dynamic spectro-polarimeter based on a modified Michelson interferometric scheme is described. The proposed system can extract a spectral Stokes vector of a transmissive anisotropic object. Detail theoretical background is derived and experiments are conducted to verify the feasibility of the proposed novel snapshot spectro-polarimeter. The proposed dynamic spectro-polarimeter enables us to extract highly accurate spectral Stokes vector of any transmissive anisotropic object with a frame rate of more than 20Hz.

A Study on the Reactor Configuration and Thermal Conditions for the Growth of High Quality Thin Film of GaN Layer

Numerical calculation has been performed to investigate the transport phenomena in the horizontal reactor which has two different gas inlets for MOCVD(metalorganic chemical vapor deposition). The full elliptic governing equations for continuity, momentum, energy and chemical species are solved by using the commercial code FLUENT. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactants. The numerical simulations demonstrate that flow rate of each species, inlet geometry of the reactor, and its distance from the susceptor as well as the inclination of upper wall of reactor can be used effectively to optimize reactor performance. The commonly used idealized boundary conditions are also investigated to predict flow phenomena in the actual deposition system.