Byung-ki Cheong

Characteristics of hydrogen co-doped ZnO : Al thin films

ZnO films co-doped with H and Al (HAZO) were prepared by sputtering ZnO targets containing 1 wt% Al2O3 on Corning glass at a substrate temperature of 150 °C with Ar and H2/Ar gas mixtures. The effects of hydrogen addition to Al-doped ZnO (AZO) films with low Al content on the electrical, the optical and the structural properties of the as-grown films as well as the vacuum- and air-annealed films were examined. Secondary ion mass spectroscopy analysis showed that the hydrogen concentration increased with increasing H2 in sputter gas. For the as-deposited films, the free carrier number increased with increasing H2. The Hall mobility increased at low hydrogen content, reaching a maximum before decreasing with a further increase of H2 content in sputter gas. Annealing at 300 °C resulted in the removal of hydrogen, causing a decrease in the carrier concentration. It was shown that hydrogen might exist as single isolated interstitial hydrogen bound with oxygen, thereby acting like an anionic dopant. Also, it was shown that the addition of hydrogen to ZnO films doped with low metallic dopant concentration could yield transparent conducting films with very low absorption loss as well as with proper electrical properties, which is suitable for thin film solar cell applications.

An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode

Fluctuations (or drifts) in switching voltages such as programming set/reset voltages and threshold voltage pose serious obstacles to the reliable operation of electrical phase change memory devices. Using a phase change memory device having a GeSb2Te4 phase change material and TiN electrode, these fluctuations are demonstrated to result from device resistances varying with programming cycles. Fluctuating resistances appear to stem primarily from large contact resistances at the interface between the phase change material and the TiN electrode and from inhomogeneous phase distribution across the GeSb2Te4 layer due to unsuccessful heat confinement near the interface with TiN. Oxidation of a TiN electrode surface (via thermal annealing at 350°C under an atmospheric gas mixture of 97.9vol% N2 and 2.1vol% O2) is very effective in the reduction of fluctuations in device resistances and switching voltages hence the resulting increase in the programming cycles by two orders of magnitude. From a high resolution t...

Mechanical and adhesion properties of Al/AlN multilayered thin films

Abstract An investigation was conducted on the mechanical properties of compositionally modulated Al/AlN thin films deposited by r.f. magnetron sputtering on Si(100) substrates. The films were made to have modulation periods ranging from 40 to 200 nm. The volume fraction of Al was varied from 0.125 to 0.625 for films with the minimum modulation period of 40 nm, but it was set to 0.5 otherwise. Hardness and adhesion of the deposited films were examined by nanoindentation and scratch test method, respectively. Residual stress of monolithic Al and AlN films with varying thickness and multilayered films was also measured by a conventional beam-bending technique. As compared with a monolithic AlN film, films of various modulation periods with the Al volume fraction of 0.5 were found to have lower hardness. On the other hand, high hardness comparable to and 12% higher than that of monolithic AlN film was registered for films that have the modulation period of 40 nm and the Al volume fraction 0.125 and 0.25, respectively. All the modulated films were found to have critical loads almost twice as high as that of a single AlN film, except the one with the lowest Al volume fraction. From the scratch test, a cohesive failure was observed for films with alternating layers in residual stress state of opposite signs whereas an adhesive failure was noticed otherwise. These observations indicate that a load-carrying capacity of a modulated film depends not only on the modulation period and individual layer thickness but on the residual stress states of alternating layers.

Optical properties of Au nanocluster embedded dielectric films

Abstract Composite films of Au and dielectric material (TiO2 and/or mixed ZnS–SiO2) with a wide range of Au fractions were fabricated through a co-sputtering method utilizing a multi-target sputtering system. The optical absorption spectra of these composite films demonstrated an absorption peak due to surface plasmon resonance of embedded Au nanoclusters. It was found that, depending on the dielectric matrix, Au concentration, and post-deposition annealing, the wavelength of the surface plasmon resonance of nanoclusters shifted by 130 nm: from 550 to 680 nm. The third-order non-linear susceptibility χ(3) of these composite films, which also originates from field enhancement due to the surface plasmon resonance, demonstrated a corresponding variation.

Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films

The density-of-state effective masses of impurity doped polycrystalline ZnO thin films were measured by the method of four coefficients technique. By applying the first-order non-parabolicity approximation, the polaron effective mass and the bare band mass at the conduction band minimum, together with the corresponding non-parabolicity parameters, were analysed successfully. The determined perpendicular polaron mass of 0.29 me and the bare band mass of 0.247 me at the conduction band minimum corresponded very well to the previous results obtained for ZnO single crystals. The non-parabolicity parameter of 0.457 eV−1 derived for the polaron effective mass was larger than 0.33 eV−1 which was obtained for the bare band mass due to the increasing function of the Frohlich coupling constant with respect to the bare band mass in polycrystalline ZnO films.

Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x

An approach is proposed to develop recording materials for high speed phase change optical data storage. It utilizes a thin film alloy mixture between a stoichiometric GeSbTe alloy and an additive ternary telluride alloy. Selection rules for an additive alloy are suggested. For a test, (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x thin films are deposited by co-sputtering and their structural and thermal properties are studied. Ge1Sb2Te4 and Sn1Bi2Te4 are found to form a completely soluble pseudo-binary system, whose crystalline lattice parameters obey Vegard’s rule over the entire range of x (0<x<1). Furthermore, the alloy mixtures display an increasing tendency for crystallization with Sn1Bi2Te4 content. Dynamic tests of disk samples are made to show the effectiveness of the approach for high speed erasure.

A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling

Using a phase-change memory (PCM) device composed of Ge2Sb2e5 (GST), we studied the mechanism of the SET-stuck failure (SSF), a constantly low-resistance state during write/erase (W/E) cycling. The SSF state was characterized with increased RESET current and decreased threshold voltage, which were thought to be due to depletion of Ge and enrichment of Sb inside the active volume of GST. Moreover, we found that device characteristics of an SSF-PCM could be recovered by reversing bias polarity and the repaired device could endure many W/E cycles, implying that field-induced ion migration was the major cause of the SSF of a PCM.

Threshold resistive and capacitive switching behavior in binary amorphous GeSe

A threshold switching (TS) event in a binary amorphous GeSe film placed between Pt top and bottom electrodes was examined. This GeSe film exhibits fast (<40 ns) TS behavior. The observed TS of the resistance was found to be accompanied with the TS of the capacitance. A mechanism for the TS of the GeSe film was suggested by revisiting the previous controversy about the thermal versus non-thermal electronic mechanism. The non-thermal electronic mechanism envisaging the double-injection of electronic carriers can qualitatively account for the measured threshold resistive and capacitive switching, whereas the TS behavior simulated using the thermal mechanism is inconsistent with the experimental observation.

Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing

We investigated the bias polarity dependence of the characteristics of a phase change memory device and found that the device showed higher resistance both at programed and erased states, extended erasing time, and higher threshold voltage (Vth) under negative bias than those under the conventional positive bias. Taking advantage of this dependence, we were able to obtain four highly distinguishable resistance states in such a reproducible manner that may be utilized for a reliable multilevel storage. We explain this polarity dependence in terms of the difference in the density of trap states at the interfaces between the phase change material and electrodes.

Lower voltage operation of a phase change memory device with a highly resistive TiON layer

The electrical switching behaviors of an offset-type phase change memory device with a highly resistive TiON layer were investigated, where the TiON layer (7 nm thick) was formed at a 70 nm wide contact between Ge1Sb2Te4 and TiN layers. Reversible transitions between crystalline (set) and amorphous (reset) phases were found to occur at relatively lower reset and set voltages, as compared with a device having no TiON layer. These results hold a high promise for a low-power operation of a phase change memory device.