Byung Wook Hwang

Improvement of H2S Sensing Properties of SnO2-Based Thick Film Gas Sensors Promoted with MoO3 and NiO

The effects of the SnO2 pore size and metal oxide promoters on the sensing properties of SnO2-based thick film gas sensors were investigated to improve the detection of very low H2S concentrations (<1 ppm). SnO2 sensors and SnO2-based thick-film gas sensors promoted with NiO, ZnO, MoO3, CuO or Fe2O3 were prepared, and their sensing properties were examined in a flow system. The SnO2 materials were prepared by calcining SnO2 at 600, 800, 1,000 and 1,200 °C to give materials identified as SnO2(600), SnO2(800), SnO2(1000), and SnO2(1200), respectively. The Sn(12)Mo5Ni3 sensor, which was prepared by physically mixing 5 wt% MoO3 (Mo5), 3 wt% NiO (Ni3) and SnO2(1200) with a large pore size of 312 nm, exhibited a high sensor response of approximately 75% for the detection of 1 ppm H2S at 350 °C with excellent recovery properties. Unlike the SnO2 sensors, its response was maintained during multiple cycles without deactivation. This was attributed to the promoter effect of MoO3. In particular, the Sn(12)Mo5Ni3 sensor developed in this study showed twice the response of the Sn(6)Mo5Ni3 sensor, which was prepared by SnO2(600) with the smaller pore size than SnO2(1200). The excellent sensor response and recovery properties of Sn(12)Mo5Ni3 are believed to be due to the combined promoter effects of MoO3 and NiO and the diffusion effect of H2S as a result of the large pore size of SnO2.

Effects of Textural Properties on the Response of a SnO2-Based Gas Sensor for the Detection of Chemical Warfare Agents

The sensing behavior of SnO2-based thick film gas sensors in a flow system in the presence of a very low concentration (ppb level) of chemical agent simulants such as acetonitrile, dipropylene glycol methyl ether (DPGME), dimethyl methylphosphonate (DMMP), and dichloromethane (DCM) was investigated. Commercial SnO2 [SnO2(C)] and nano-SnO2 prepared by the precipitation method [SnO2(P)] were used to prepare the SnO2 sensor in this study. In the case of DCM and acetonitrile, the SnO2(P) sensor showed higher sensor response as compared with the SnO2(C) sensors. In the case of DMMP and DPGME, however, the SnO2(C) sensor showed higher responses than those of the SnO2(P) sensors. In particular, the response of the SnO2(P) sensor increased as the calcination temperature increased from 400 °C to 800 °C. These results can be explained by the fact that the response of the SnO2-based gas sensor depends on the textural properties of tin oxide and the molecular size of the chemical agent simulant in the detection of the simulant gases (0.1–0.5 ppm).

Effects of alkali-metal carbonates and nitrates on the CO2 sorption and regeneration of MgO-based sorbents at intermediate temperatures

The effects of alkali-metal carbonates and nitrates on the CO2 sorption and regeneration of MgO-based sorbents were investigated in the presence of 10 vol% CO2 and 10 vol% H2O in an intermediate temperature range, 300 to 450 °C. The CO2 capture capacities of the MgO-based sorbents promoted with Na2CO3 and K2CO3 were 9.7 and 45.0 mg CO2/g sorbent, respectively. On the other hand, a MgO-based sorbent promoted with both Na2CO3 and NaNO3 exhibited the highest CO2 capture capacity of 97.4mg CO2/g sorbent at 200 °C in 10 vol% CO2, which was almost ten-times greater than that of the MgO-based sorbent promoted with Na2CO3. The CO2 sorption rate of these sorbents was higher than that of the MgO-based sorbents promoted with alkali-metal nitrates due to the formation of Na2Mg(CO3)2 or K2Mg(CO3)2 by the alkali-metal carbonate and the eutectic reaction of the alkali-metal nitrates. In addition, the reproducibility problem of double-salt sorbents obtained by the precipitation method was completely resolved by impregnating MgO with alkali-metal carbonates and nitrates. Furthermore, we found that their desorption temperatures are lower than those of the MgO-based sorbents promoted with alkali-metal carbonates due to the eutectic reaction during the regeneration process.