Byungmin Ahn

InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays

Uniform GaN nanorod arrays are grown vertically by selective area growth on (left angle bracket 0001 right angle bracket) substrates. The GaN nanorods present six nonpolar {1⁻100} facets, which serve as growth surfaces for InGaN-based light-emitting diode quantum well active regions. Compared to growth on the polar {0001} plane, the piezoelectric fields in the multiple quantum wells (MQWs) can be eliminated when they are grown on nonpolar planes. The capability of growing ordered GaN nanorod arrays with different rod densities is demonstrated. Light emission from InGaN/GaN MQWs grown on the nonpolar facets is investigated by photoluminescence. Local emission from MQWs grown on different regions of GaN nanorods is studied by cathodoluminescence (CL). The core-shell structure of MQWs grown on GaN nanorods is investigated by cross-sectional transmission electron microscopy in both axial and radial directions. The results show that the active MQWs are predominantly grown on nonpolar planes of GaN nanorods, consistent with the observations from CL. The results suggest that GaN nanorod arrays are suitable growth templates for efficient light-emitting diodes.

Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets

We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy. Owing to the high aspect ratio of the GaN nanosheet structure, the MQWs predominantly grow on nonpolar GaN planes. The results suggest that GaN nanosheets provide a conduction path for device fabrication and also a growth template to reduce the piezoelectric field inside the active region of InGaN-based light emitting diodes.

Thermal stability in nanostructured Al-5083/SiCp composites fabricated by cryomilling

Abstract Nanostructured Al-5083/SiCp composites, which consist of an ultrafine grained Al-5083 matrix reinforced with nanosized SiC particles, were fabricated via a cryomilling plus consolidation process. The thermal stability of these composites was studied by investigating the effects of annealing temperature on tensile properties and Vickers hardness of the composites and grain growth in the Al-5083 matrixes, with the annealing temperature ranging up to 873 K. The experimental results indicate that, after annealing at temperatures up to 773 K (0·90 T m, where T m is 862 K, the melting onset temperature of the Al-5083 matrixes), the strength of the composites did not decrease significantly, while the grain size of the Al-5083 matrixes did not show a noticeable increase. The grains in some areas of the Al-5083 matrixes did not grow even after annealing at 873 K (1·01 T m). The high thermal stability is attributed to the dispersion of native oxide particles observed at the lamellar interfaces created by cryomilling.

Focused Ion Beam Engineered Whispering Gallery Mode Resonators with Open Cavity Structure

We report the realization of an open cavity whispering gallery mode optical resonator, in which the circulating light traverses a free space gap. We utilize focused ion beam microfabrication to precisely cut a 10 μm wide notch into the perimeter of a crystalline disc. We have shown that this modified resonator structure supports high quality modes, and demonstrated qualify factor, Q ~/= 10(6), limited by the notch surface roughness due to the ion milling process. Furthermore, we investigated the spatial profile of the modes inside the open cavity with a microfabricated probe mechanism. This new type of resonator structure facilitates interaction of the cavitys optical field with mechanical resonators as well as individual atoms or molecules.

Effect of Mg composition on sintering behaviors and mechanical properties of Al–Cu–Mg alloy

Abstract Al–3Cu–Mg alloy was fabricated by the powder metallurgy (P/M) processes. Air-atomized powders of each alloying element were blended with various Mg contents (0.5%, 1.5%, and 2.5%, mass fraction). The compaction pressure was selected to achieve the elastic deformation, local plastic deformation, and plastic deformation of powders, respectively, and the sintering temperatures for each composition were determined, where the liquid phase sintering of Cu is dominant. The microstructural analysis of sintered materials was performed using optical microscope (OM) and scanning electron microscope (SEM) to investigate the sintering behaviors and fracture characteristics. The transverse rupture strength (TRS) of sintered materials decreased with greater Mg content (Al–3Cu–2.5Mg). However, Al–3Cu–0.5Mg alloy exhibited moderate TRS but higher specific strength than Al–3Cu without Mg addition.

Influence of hot isostatic pressing on microstructure and mechanical behaviour of nanostructured Al alloy

Abstract Aluminium alloy AA 5083 [Al–4·4Mg–0·7Mn–0·15Cr (wt-%)], powder was ball milled in liquid nitrogen via the cryomilling method to obtain a nanocrystalline (NC) structure. Samples of the powder were hot vacuum degassed to remove interstitial contaminants, then consolidated by hot isostatic pressing (HIPing) at six temperatures (from 0·46Tm to 0·89Tm), before being high strain rate forged (HSRF) to produce plate material. The microstructure was analysed at the different processing stages. The compressive properties of the as HIPed material, plus tensile properties of the final product were studied. Despite grain growth during HIPing, an ultrafine grain (UFG) structure was retained in the consolidated material, which consequently had increased strength over conventionally processed AA 5083. As the HIP temperature was increased, the density increased. Strength changes were minimal in compression and tension with varying HIP temperature, once near full density was attained at 275°C (∼0·64TM). Yield strength data indicate negligible variation in the grain size of the materials.

The Role of Charge Balance and Excited State Levels on Device Performance of Exciplex-based Phosphorescent Organic Light Emitting Diodes

The design of novel exciplex-forming co-host materials provides new opportunities to achieve high device performance of organic light emitting diodes (OLEDs), including high efficiency, low driving voltage and low efficiency roll-off. Here, we report a comprehensive study of exciplex-forming co-host system in OLEDs including the change of co-host materials, mixing composition of exciplex in the device to improve the performance. We investigate various exciplex systems using 5-(3–4,6-diphenyl-1,3,5-triazin-2-yl)phenyl-3,9-diphenyl-9H-carbazole, 5-(3–4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-9-phenyl-9H-3,9′-bicarbazole, and 2-(3-(6,9-diphenyl-9H-carbazol-4-yl)phenyl)-4-phenylbenzo[4,5]thieno[3,2-d]pyrimidine, as electron transporting (ET: electron acceptor) hosts and 9,9′-dipenyl-9H, 9′H-3,3′-bicarbazole and 9-([1,1′-biphenyl]-4-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole as hole transporting (HT: electron donor) hosts. As a result, a very high current efficiency of 105.1 cd/A at 103 cd/m2 and an extremely long device lifetime of 739 hrs (t95: time after 5% decrease of luminance) are achieved which is one of the best performance in OLEDs. Systematic approach, controlling mixing ratio of HT to ET host materials is suggested to select the component of two host system using energy band matching and charge balance optimization method. Furthermore, our analysis on exciton stability also reveal that lifetime of OLEDs have close relationship with two parameters; singlet energy level difference of HT and ET host and difference of singlet and triplet energy level in exciplex.

Evolution of hardness, microstructure, and strain rate sensitivity in a Zn-22% Al eutectoid alloy processed by high-pressure torsion

Severe plastic deformation (SPD) is an attractive processing method for refining microstructures of metallic materials to give ultrafine grain sizes within the submicrometer to even the nanometer levels. Experiments were conducted to discuss the evolution of hardness, microstructure and strain rate sensitivity, m, in a Zn-22% Al eutectoid alloy processed by high- pressure torsion (HPT). The data from microhardness and nanoindentation hardness measurements revealed that there is a significant weakening in the Zn-Al alloy during HPT despite extensive grain refinement. Excellent room-temperature (RT) plasticity was observed in the alloy after HPT from nanoindentation creep in terms of an increased value of m. The microstructural changes with increasing numbers of HPT turns show a strong correlation with the change in the m value. Moerover, the excellent RT plasticity in the alloy is discussed in terms of the enhanced level of grain boundary sliding and the evolution of microsturucture.

Plasmon-enhanced ZnO nanorod/Au NPs/Cu2O structure solar cells: Effects and limitations

Cu-based compounds can be a good candidate for a low cost solar cell material. In particular, CuxO (x : 1–2) has a good visible light absorbing bandgap at 1–2 eV. As for using nanostructures in solar cell applications, metal nanoparticle-induced localized plasmon resonance is a promising way to increase light absorbance, which can help improve the efficiency of solar cells. We fabricated ZnO nanorod/Au nanoparticles/Cu2O nanostructures to study their solar cell performance. ZnO nanorods and Cu2O layer were synthesized by the electrodeposition method. Size-controlled Au nanoparticles were deposited using E-beam evaporator for localized surface plasmon resonance (LSPR) effect. By inserting Au plasmon nanoparticles and annealing Au NPs in solar cells, we could tune the maximum incident photon-to-current efficiency wavelength. However, the potential well formed by Au NP at the ZnO/Cu2O junction leads to charge-trapping, based on the constructed electronic band analysis. LSPR-induced hot carrier generation is proposed to promote carrier transport further in the presence of Au NPs.

Photochemical tuning of ultrathin TiO2/p-Si p-n junction properties via UV-induced H doping

We report a modified TiO2/p-Si electronic structure that uses ultraviolet exposure for the incorporation of H. This structure was characterized using various photoelectron spectroscopic techniques. The ultraviolet (UV) exposure of the TiO2 surface allowed the Fermi energy level to be tuned by the insertion of H radicals, which induced changes in the heterojunction TiO2/p-Si diode properties. The UV exposure of the TiO2 surface was performed in air. On UVexposure, a photochemical reaction involving the incorporation of UV-induced H radicals led to the creation of a surface Ti-O-OH group and caused interstitial H doping (Ti-H-O) in the bulk, which modified the electronic structures in different ways, depending on the location of the H. On the basis of the band alignment determined using a combined spectroscopic analysis, it is suggested that the UV-induced H incorporation into the TiO2 could be utilized for the systematic tuning of the heterojunction property for solar cells, photocatalytic applications, and capacitors.