C. A. Balseiro

Electrical control of the chemical bonding of fluorine on graphene

We study the electronic structure of diluted F atoms chemisorbed on graphene using density functional theory calculations. We show that the nature of the chemical bonding of a F atom adsorbed on top of a C atom in graphene strongly depends on carrier doping. In neutral samples the F impurities induce a sp^3-like bonding of the C atom below, generating a local distortion of the hexagonal lattice. As the graphene is electron-doped, the C atom retracts back to the graphene plane and for high doping (10^14 cm^-2) its electronic structure corresponds to a nearly pure sp^2 configuration. We interpret this sp^3-sp^2 doping-induced crossover in terms of a simple tight binding model and discuss the physical consequences of this change.

Floquet chiral edge states in graphene

We report on the emergence of laser-induced chiral edge states in graphene ribbons. Insights on the nature of these Floquet states is provided by an analytical solution which is complemented with numerical simulations of the transport properties. Guided by these results we show that graphene can be used for realizing non-equilibrium topological states with striking tunability: While the laser intensity can be used to control their velocity and decay length, changing the laser polarization switches their propagation direction.

Multiterminal Conductance of a Floquet Topological Insulator

We report on simulations of the dc conductance and quantum Hall response of a Floquet topological insulator using Floquet scattering theory. Our results reveal that laser-induced edge states lead to quantum Hall plateaus once imperfect matching with the nonilluminated leads is lessened. The magnitude of the Hall plateaus, however, is not directly related to the number and chirality of all the edge states at a given energy, as usual. Instead, the plateaus are dominated by those edge states adding to the time-averaged density of states. Therefore, the dc quantum Hall conductance of a Floquet topological insulator is not directly linked to topological invariants of the full Floquet bands.

Irradiated graphene as a tunable Floquet topological insulator

In the presence of a circularly polarized mid-infrared radiation graphene develops dynamical band gaps in its quasienergy band structure and becomes a Floquet insulator. Here, we analyze how topologically protected edge states arise inside these gaps in the presence of an edge. Our results show that the gap appearing at

Localized spins on graphene.

\ensuremath{\hbar}\ensuremath{\Omega}/2

Transverse electron focusing in systems with spin-orbit coupling

, where

From single to multiple Ag-layer modification of Au nanocavity substrates: a tunable probe of the chemical surface-enhanced Raman scattering mechanism.

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Spin accumulation and equilibrium currents at the edge of 2DEGs with spin-orbit coupling

is the photon energy, is bridged by two chiral edge states whose propagation direction is set by the direction of the polarization of the radiation field. Therefore, both the propagation direction and the energy window where the states appear can be controlled externally. We present both analytical and numerical calculations that fully characterize these states. This is complemented by simple topological arguments that account for them and by numerical calculations for the case of the semi-infinite sample, thereby eliminating finite-size effects.

Anomalous Josephson Current in Junctions with Spin Polarizing Quantum Point Contacts

The problem of a magnetic impurity, atomic or molecular, absorbed on top of a carbon atom in otherwise clean graphene is studied using the numerical renormalization group. The spectral, thermodynamic, and scattering properties of the impurity are described in detail. In the presence of a small magnetic field, the low-energy electronic features of graphene make it possible to inject spin-polarized currents through the impurity using a scanning tunneling microscope. Furthermore, the impurity scattering becomes strongly spin dependent and for a finite impurity concentration it leads to spin-polarized bulk currents and a large magnetoresistance. In gated graphene the impurity spin is Kondo screened at low temperatures. However, at temperatures larger than the Kondo temperature, the anomalous magnetotransport properties are recovered.

Magnetic structure of hydrogen-induced defects on graphene

We study the transverse electron focusing in a two-dimensional electron gas with Rashba spin-orbit coupling. We show that the interplay between the external magnetic field and the spin-orbit coupling gives two branches of states with different cyclotron radius within the same energy window. This effect generates a splitting of the first focusing peak in two contributions. Each one of these contributions is spin polarized. The surface reflection mixes the two branches and the second focusing peak does not present the same effect. While for GaAs/ AlGaAs heterostructures the effect is small, in systems like InSb/ InAlSb the effect should be clearly observed.