C. Alonso-Ramos

Suspended silicon mid-infrared waveguide devices with subwavelength grating metamaterial cladding.

We present several fundamental photonic building blocks based on suspended silicon waveguides supported by a lateral cladding comprising subwavelength grating metamaterial. We discuss the design, fabrication, and characterization of waveguide bends, multimode interference devices and Mach-Zehnder interferometers for the 3715 - 3800 nm wavelength range, demonstrated for the first time in this platform. The waveguide propagation loss of 0.82 dB/cm is reported, some of the lowest loss yet achieved in silicon waveguides for this wavelength range. These results establish a direct path to ultimately extending the operational wavelength range of silicon wire waveguides to the entire transparency window of silicon.

High-directionality fiber-chip grating coupler with interleaved trenches and subwavelength index-matching structure.

We present the first experimental demonstration of a new fiber-chip grating coupler concept that exploits the blazing effect by interleaving the standard full (220 nm) and shallow etch (70 nm) trenches in a 220 nm thick silicon layer. The high directionality is obtained by controlling the separation between the deep and shallow trenches to achieve constructive interference in the upward direction and destructive interference toward the silicon substrate. Utilizing this concept, the grating directionality can be maximized independent of the bottom oxide thickness. The coupler also includes a subwavelength-engineered index-matching region, designed to reduce the reflectivity at the interface between the injection waveguide and the grating. We report a measured fiber-chip coupling efficiency of -1.3  dB, the highest coupling efficiency achieved to date for a surface grating coupler in a 220 nm silicon-on-insulator platform fabricated in a conventional dual-etch process without high-index overlays or bottom mirrors.

Germanium-on-silicon Vernier-effect photonic microcavities for the mid-infrared.

We present Vernier-effect photonic microcavities based on a germanium-on-silicon technology platform, operating around the mid-infrared wavelength of 3.8 μm. Cascaded racetrack resonators have been designed to operate in the second regime of the Vernier effect, and typical Vernier comb-like spectra have been successfully demonstrated with insertion losses of ∼5  dB, maximum extinction ratios of ∼23  dB, and loaded quality factors higher than 5000. Furthermore, an add-drop racetrack resonator designed for a Vernier device has been characterized, exhibiting average insertion losses of 1 dB, extinction ratios of up to 18 dB, and a quality factor of ∼1700.

Broadband fiber-chip zero-order surface grating coupler with 0.4 dB efficiency

Surface grating couplers enable efficient coupling of light between optical fibers and nanophotonic waveguides. However, in conventional grating couplers, the radiation angle is intrinsically wavelength dependent, thereby limiting their operation bandwidth. In this Letter, we present a zero-order surface grating coupler in silicon-on-insulator which overcomes this limitation by operating in the subwavelength regime. By engineering the effective refractive index of the grating region, both high coupling efficiency and broadband operation bandwidth are achieved. The grating is assisted by a silicon prism on top of the waveguide, which favors upward radiation and minimizes power losses to substrate. Using a linear apodization, our design achieves a coupling efficiency of 91% (-0.41  dB) and a 1-dB bandwidth of 126 nm.

Analysis of silicon-on-insulator slot waveguide ring resonators targeting high Q-factors

Vertical slot waveguide micro-ring resonators in silicon photonics have already been demonstrated in previous works and applied to several schemes, including sensing and hybrid nonlinear optics. Their performances, first quantified by the reachable Q-factors, are still perceived to be restrained by larger intrinsic propagation losses than those suffered by simple Si wire waveguides. In this Letter, the optical loss mechanisms of slot waveguide micro-ring resonators are thoroughly investigated with a special focus on the coupler loss contribution that turns out to be the key obstacle to achieving high Q-factors. By engineering the coupler design, slotted ring resonators with a 50 μm radius are experienced with a loaded Q-factor up to 10 times improvement from Q=3,000 to Q=30,600. The intrinsic losses due to the light propagation in the bent slot ring itself are proved to be as low as 1.32±0.87  dB/cm at λ=1,550  nm. These investigations of slot ring resonators open high performance potentials for on-chip nonlinear optical processing or sensing in hybrid silicon photonics.

Single-etch subwavelength engineered fiber-chip grating couplers for 1.3 µm datacom wavelength band

We report, for the first time, on the design and experimental demonstration of fiber-chip surface grating couplers based on subwavelength grating engineered nanostructure operating in the low fiber chromatic dispersion window (around 1.3 μm wavelengths), which is of great interest for short-reach data communication applications. Our coupler designs meet the minimum feature size requirements of large-volume deep-ultraviolet stepper lithography processes. The fiber-chip couplers are implemented in a standard 220-nm-thick silicon-on-insulator (SOI) platform and are fabricated by using a single etch process. Several types of couplers are presented, specifically the uniform, the apodized, and the focusing designs. The measured peak coupling efficiency is -2.5 dB (56%) near the central wavelength of 1.3 μm. In addition, by utilizing the technique of the backside substrate metallization underneath the grating couplers, the coupling efficiency of up to -0.5 dB (89%) is predicted by Finite Difference Time Domain (FDTD) calculations.

Germanium-on-silicon mid-infrared grating couplers with low-reflectivity inverse taper excitation

A broad transparency range of its constituent materials and compatibility with standard fabrication processes make germanium-on-silicon (Ge-on-Si) an excellent platform for the realization of mid-infrared photonic circuits. However, the comparatively large Ge waveguide thickness and its moderate refractive index contrast with the Si substrate hinder the implementation of efficient fiber-chip grating couplers. We report for the first time, to the best of our knowledge, a single-etch Ge-on-Si grating coupler with an inversely tapered access stage, operating at a 3.8 μm wavelength. Optimized grating excitation yields a coupling efficiency of -11  dB (7.9%), the highest value reported for a mid-infrared Ge-on-Si grating coupler, with reflectivity below -15  dB (3.2%). The large periodicity of our higher-order grating design substantially relaxes the fabrication constraints. We also demonstrate that a focusing geometry allows a 10-fold reduction in inverse taper length, from 500 to 50 μm.

Integration of Carbon Nanotubes in Silicon Strip and Slot Waveguide Micro-Ring Resonators

Silicon photonics has emerged as a very promising technology platform for the implementation of high-performance, low-cost, ultra-compact circuits that can monolithically cointegrate electronic, opto-electronic and optic functionalities. However, Si neither has efficient light emission or detection in the telecom wavelength range, nor exhibits efficient electro-optic Pockels effect, hindering the implementation of integrated active devices like sources, detectors, or modulators. Current approaches relay on different materials to provide active functionalities in Si photonics, resulting in highly complex integration schemes that compromise cost-effectiveness. Semiconducting single-wall carbon nanotubes (SWNTs) are capable of emitting and detecting near-infrared light at room temperature and exhibit intrinsically fast electro-optic effects. They have also proven promising uses in micro-electronic devices, making them an ideal material to provide active functionalities in the Si photonic platform. In this work, we propose and experimentally validate the possible use of slot photonic waveguides to improve interaction between SWNTs and Si waveguide modes. Fabricated Si slot micro-ring shown an experimental ~ 60% photo-luminescence improvement compared to previous demonstration based on Si strip waveguide resonators. These results prove the potential of Si slot waveguides for the implementation of efficient SWNT-based Si photonic devices.

Group IV mid-­infrared photonics

In this paper we present SOI, suspended Si, and Ge-on-Si photonic platforms and devices for the mid-infrared. We demonstrate low loss strip and slot waveguides in SOI and show efficient strip-slot couplers. A Vernier configuration based on racetrack resonators in SOI has been also investigated. Mid-infrared detection using defect engineered silicon waveguides is reported at the wavelength of 2-2.5 μm. In order to extend transparency of Si waveguides, the bottom oxide cladding needs to be removed. We report a novel suspended Si design based on subwavelength structures that is more robust than previously reported suspended designs. We have fabricated record low loss Ge-on-Si waveguides, as well as several other passive devices in this platform. All optical modulation in Ge is also analyzed.

A general approach for robust integrated polarization rotators

Integrated polarization rotators suffer from very high sensitivity to fabrication errors. A polarization rotator scheme that substantially increases fabrication tolerances is proposed. In the proposed scheme, two tunable polarization phase shifters are used to connect three rotator waveguide sections. By means of properly setting the polarization phase shifters, fabrication errors are compensated and perfect polarization rotation is achieved. Analytical conditions are shown that determine the maximum deviation that can be corrected with the proposed scheme. A design example is discussed, where the thermo-optic effect is used to provide the required tunable polarization phase shifting. Calculated 40dB extinction ratio is shown in presence of fabrication errors that would yield a 4dB extinction ratio in the conventional approach.