C B M Andersson

The electronic structure of In- and As-terminated InAs(001) surfaces

Abstract The InAs(001) 2 × 4 and 4 × 2 surfaces have been investigated by angle-resolved photoemission. The X 3 and X 5 points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Г-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions [110] and [110], three surface induced states were identified on both the InAs(001)4 × 2 and the InAs(001)2 × 4 surface.

Sputtered and annealed InAs(111) : an unreconstructed surface

The electronic structure of the InAs(111)1 × 1 surface has been investigated by angle resolved photoelectron spectroscopy along the symmetry lines ΓK, ΓM, and ΓM′ of the surface Brillouin zone. The bulk valence band structure was calculated using a combination of the linear augmented plane-wave method and the relativistic augmented plane-wave method. We have projected the theoretical bulk band structure onto the surface Brillouin zone to separate surface states from surface resonances. Two surface related structures, S1 and S2, have been observed and their Ei(k‖) dispersions are established. Both S1 and S2 show the symmetry of the 1 × 1 surface Brillouin zone, which is consistent with the observed 1 × 1 LEED pattern. We identify S1 as the As-derived dangling bond state, and S2 is associated with the backbonds connecting the As atoms in the surface layer with the underlying In layer.

Surface atomic structure of InAs(1̄1̄1̄)2 × 2 and InSb(1̄1̄1̄)2 × 2 studied by core level spectroscopy

Abstract Surface sensitive high resolution core level spectroscopy has been applied to the molecular beam epitaxy grown InAs ( 1 1 1 )2 × 2 and InSb ( 1 1 1 )2 × 2 surfaces. For both systems the In 4d core level consists of one dominating component while the Group V core levels are deconvoluted into four components. This analysis is consistent with a surface model where the topmost layer consists entirely of arsenic or antimony. In this model, Group V atoms form trimers bound to Group V atoms in the first double layer, leaving a single Group V rest atom per unit cell.

Bulk and surface electronic structure of InAs(110)

The InAs(110) cleavage surface has been investigated by angle-resolved photoelectron spectroscopy. A separation between the In 4d(5/2) bulk component and the valence band maximum of 16.8 eV is found to be consistent with normal emission spectra. Experimental energy band dispersions, E-i(k), for the four bulk valence bands are established along the Sigma-line of the bulk Brillouin zone. A bulk band structure calculation utilizing the augmented plane-wave method is made. The experimental and calculated E-i(k) dispersions are found to be in good agreement with each other. E-i(k(parallel to)) dispersions for two surface-related structures are established along the lines -(M) over bar and (Y) over bar-(M) over bar of the surface Brillouin zone

Surface atomic structure of InAs((111)over-bar)2x2 and InSb((111)over-bar)2x2 studied by core level spectroscopy

Abstract Surface sensitive high resolution core level spectroscopy has been applied to the molecular beam epitaxy grown InAs ( 1 1 1 )2 × 2 and InSb ( 1 1 1 )2 × 2 surfaces. For both systems the In 4d core level consists of one dominating component while the Group V core levels are deconvoluted into four components. This analysis is consistent with a surface model where the topmost layer consists entirely of arsenic or antimony. In this model, Group V atoms form trimers bound to Group V atoms in the first double layer, leaving a single Group V rest atom per unit cell.

Surface atomic structure of and studied by core level spectroscopy

Abstract Surface sensitive high resolution core level spectroscopy has been applied to the molecular beam epitaxy grown InAs ( 1 1 1 )2 × 2 and InSb ( 1 1 1 )2 × 2 surfaces. For both systems the In 4d core level consists of one dominating component while the Group V core levels are deconvoluted into four components. This analysis is consistent with a surface model where the topmost layer consists entirely of arsenic or antimony. In this model, Group V atoms form trimers bound to Group V atoms in the first double layer, leaving a single Group V rest atom per unit cell.