C. Feng
University of Jinan
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Featured researches published by C. Feng.
Materials Technology | 2015
C. Feng; C.H. Yang; H.T. Sui; F.J. Geng
Abstract 0·7Na0·5Bi0·5TiO3–0·3Bi(Fe0·95Mn0·05)O3 (NBT–BFOMn) and (Na0·5Bi0·5)TiO3 (NBT) thin films were fabricated on LaNiO3(l 00)/Si substrate by metal organic decomposition. Both films crystallise into the single perovskite structures with strong (l 00) diffraction peaks. The leakage current of NBT–BFOMn can be suppressed due to the decrease in the content for oxygen vacancies and the formation of defect complexes. Compared with the round shaped polarisation–electric field loop for pure NBT, much improved ferroelectric property with a remnent polarisation Pr of 28 μC cm−2 and coercive field Ec of 152 kV cm−1 at 630 kV cm−1 has been obtained for NBT–BFOMn thin film. In addition, the higher change of relative dielectric content ϵr variation versus voltage indicates the enhancement in the ferroelectric nature of NBT–BFOMn thin film. The ϵr and dissipation factor tanδ on frequency for NBT–BFOMn show small dispersion tendency with ϵr of 370 and tanδ of 0·167 at 100 kHz.
Materials Research Express | 2016
C. Feng; C.H. Yang; F.J. Geng; Panpan Lv; Q. Yao
A series of Mn doped Na1/2Bi1/2TiO3 (NBT) thin films with dopant concentrations from 0 to 4 at% (NBTMn x , x = 0, 0.01, 0.02, 0.04) were fabricated on the indium tin oxide/glass substrates by chemical solution deposition. The effects of Mn doping content on crystalline, ferroelectric and dielectric properties were investigated. All thin films exhibit phase-pure polycrystalline perovskite structures. For the insulating measurement, at low electric field, space charge limited conduction or a grain boundary limited behavior is responsible for the leakage behavior of NBTMn x thin films, whereas at the high electric field, the dominant mechanism is changed to the interface-limited Fowler–Nordheim tunneling except NBTMn0.04. The leakage current density is reduced by more than three orders of magnitude in NBTMn0.02 compared with that of NBT thin film. Also, the enhanced ferroelectric properties of NBTMn0.02 thin film can be observed in polarization–electric filed hysteresis loop with P r of 38 μC cm−2, which is consistent with the result of the normalized capacitance–voltage curve. The dielectric constant and dissipation factor of NBTMn0.02 thin film are 501 and 0.04, respectively at 100 kHz. These electrical property improvements are attributed to the decrease of oxygen vacancy-induced leakage current.
Surface Review and Letters | 2014
Huiting Sui; Changhong Yang; Gaoyun Wang; C. Feng
For chemical solution decomposition process, the precursor solution is a basic factor affecting the quality of the deposited-film. In this paper, we choose (l00)-oriented 0.7[(Bi0.95Ce0.05)0.5Na0.5(Ti0.99Fe0.01)O3]-0.3BiFe0.97Mn0.03O3(0.7NBTCeFe-0.3BFOMn) thin films prepared by various precursor solutions for investigation. The roles of precursor solution modification on crystallinity, ferroelectric and dielectric properties are characterized. With the addition of polyethylene glycol into the solution, phase-pure perovskite structure can be obtained. Furthermore, when the volume ratio for the solvents (ethylene glycol to acetic acid) is modified as 2:1, enhanced ferroelectricity can be achieved with a remanent polarization (Pr) of 27.5 μC/cm2, which coincides well with the capacitance–voltage curve with relatively sharp feature. Also, the 0.7NBTCeFe-0.3BFOMn film exhibits a dielectric constant (er) of 576 and dielectric loss (tan δ) of 0.123 at 100 kHz.
Materials Letters | 2015
Huiting Sui; Changhong Yang; Fangjun Geng; C. Feng
Ceramics International | 2015
C. Feng; C.H. Yang; H.T. Sui; F.J. Geng; Y.J. Han
Ceramics International | 2015
C. Feng; C.H. Yang; S.X Li; Y.J. Han; X.Q. Hu; F.Y. Jiao; J. Qian; X.B. Du
Journal of Alloys and Compounds | 2014
H.T. Sui; Changhong Yang; Mingshi Zhao; Weiqiang Lin; C. Feng
Ceramics International | 2015
C.H. Yang; H.T. Sui; H.T. Wu; C. Feng; F.J. Geng; Yao Yao
Journal of Sol-Gel Science and Technology | 2016
Panpan Lv; C.H. Yang; F.J. Geng; C. Feng; X. M. Jiang; Guangda Hu
Ceramics International | 2016
Panpan Lv; C.H. Yang; F.J. Geng; C. Feng; X. M. Jiang; Guangda Hu