C. Fukunaga

Development of novel fabrication techniques for a silicon micro-vertex detector unit using the Flip-Chip bonding method

Full-size models of a detector unit for a silicon micro-vertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film (ACF) was examined. The structure using the new type ACF and improved fabrication process provide a sufficient electrical connection and good reliability for the detector unit. >

Performance of a double-sided silicon microstrip detector with a wide-pitch N-side readout using a field-plate and a multi P-stop structure

The previous prototype of the double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by oxide-nitride-oxide (ONO) dielectric film showed band-to-band tunneling (BBT) current at the field-plate structure for the N/sup +/ strip, which represented a limitation to the biasing configuration. We report improved characteristics of the modified field-plate structure and the wide-pitch n-side readout using a multi p-stop structure combined thereon.

Evaluation of silicon micro strip detectors with large read-out pitch

For the development of the silicon micro strip detector with the pitch of the readout strips as large as 250 /spl mu/m on ohmic side, we made samples with different structures. Charge collection was evaluated to optimize the width of implant strips, aluminum read-out strips, and/or the read-out scheme among strips.

Test of a double-sided double-metal silicon microstrip detector with an ONO insulator

A double-sided double-metal silicon microstrip detector with an ONO (SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/) insulator has been tested. The full-depletion voltage and field plate voltage were found to be 50 V and -25 V, respectively. The results of tests with an infrared (IR) laser and a /sup 90/Sr /spl beta/ source are presented.