C. Gößling

The ATLAS Silicon Pixel Sensors

Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired.

The trigger system of the NOMAD experiment

The NOMAD trigger system is described in the present paper. It is made up of a large area plastic scintillator veto system, two trigger scintillator planes inside a 0.4 T magnetic field and their associated trigger electronics. Special features of the system consist of the use of proximity mesh photomultipliers which allow the trigger scintillators to operate in the magnetic field, and the use of custom-built VME modules which perform the trigger logic decisions, the signal synchronisation and gate generation, event counting and livetime calculations. This paper also includes a description of each of the NOMAD triggers, with their calculated and measured rates, efficiencies and livetimes.

A measurement of Lorentz angle and spatial resolution of radiation hard silicon pixel sensors

Silicon pixel sensors developed by the ATLAS collaboration to meet LHC requirements and to withstand hadronic irradiation to fluences of up to

First results on double β-decay modes of Cd, Te, and Zn Isotopes

10^{15} n_eq/cm^{2}

Electrical characteristics of silicon pixel detectors

have been evaluated using a test beam facility at CERN providing a magnetic field. The Lorentz angle was measured and found to alter from 9.0 deg. before irradiation, when the detectors operated at 150 V bias at B=1.48 T, to 3.1 deg after irradiation and operating at 600 V bias at 1.01 T. In addition to the effect due to magnetic field variation, this change is explained by the variation of the electric field inside the detectors arising from the different bias conditions. The depletion depths of irradiated sensors at various bias voltages were also measured. At 600 V bias 280 micron thick sensors depleted to ~200 micron after irradiation at the design fluence of 1 10^{15} 1 MeV n_eq/cm2 and were almost fully depleted at a fluence of 0.5 * 10^{15} 1 MeV n_eq/cm2. The spatial resolution was measured for angles of incidence between 0 deg and 30 deg. The optimal value was found to be better than 5.3 micron before irradiation and 7.4 micron after irradiation.

Pion-induced damage in silicon detectors

T. Bloxham, A. Boston, J. Dawson, D. Dobos, S.P. Fox, M. Freer, B.R. Fulton, C. Gößling, P.F. Harrison, M. Junker, H. Kiel, J. McGrath, B. Morgan, D. Münstermann, P. Nolan, S. Oehl, Y. Ramachers, C. Reeve, D. Stewart, R. Wadsworth, J.R. Wilson, and K. Zuber School of Physics and Astronomy, University of Birmingham, B15 2TT, UK Lehrstuhl für Experimentelle Physik IV, Universität Dortmund, Otto–Hahn Str. 4,44227 Dortmund, Germany Laboratori Nazionali del Gran Sasso, S.S. 17 BIS km. 18.910, 67010, Assergi, L’Aquila, Italy Dept. of Physics, University of Liverpool, Liverpool L69 7ZE, UK Dept. of Physics and Astronomy, University of Sussex, Brighton, BN1 9QH, UK Dept. of Physics, University of Warwick, Coventry CV4 7AL, UK Dept. of Physics, University of York, Heslington, York, YO10 5DD, UK (Dated: February 5, 2008)

Measurement of the production cross-sections of pi(+/-) in p-C and pi(+/-)-C interactions at 12 GeV/c

Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

Gate-controlled diodes for characterization of the Si–SiO2 interface with respect to surface effects of silicon detectors

The damage induced by pions in silicon detectors is studied for positive and negative pions for fluences up to 1014 cm−2 and 1013 cm−2, respectively. Results on the energy dependence of the damage in the region of 65 to 330 MeV near to the Δ resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron- and proton-induced damage are presented and discussed.

Radiation induced bulk damage in silicon detectors

The results of the measurements of the double-differential production cross-sections of pions, dσ/dpdΩ, in p-C and π-C interactions using the forward spectrometer of the HARP experiment are presented. The incident particles are 12 GeV/c protons and charged pions directed onto a carbon target with a thickness of 5% of a nuclear interaction length. For p-C interactions the analysis is performed using 100 035 reconstructed secondary tracks, while the corresponding numbers of tracks for π-C and π-C analyses are 106 534 and 10 122 respectively. Cross-section results are presented in the kinematic range 0.5 GeV/c ≤ pπ < 8 GeV/c and 30 mrad ≤ θπ < 240 mrad in the laboratory frame. The measured cross-sections have a direct impact on the precise calculation of atmospheric neutrino fluxes and on the improved reliability of extensive air shower simulations by reducing the uncertainties of hadronic interaction models in the low energy range. HARP collaboration M.G. Catanesi, E. Radicioni Università degli Studi e Sezione INFN, Bari, Italy R. Edgecock, M. Ellis, S. Robbins, F.J.P. Soler Rutherford Appleton Laboratory, Chilton, Didcot, UK C. Gößling Institut für Physik, Universität Dortmund, Germany S. Bunyatov, A. Krasnoperov, B. Popov, V. Tereshchenko Joint Institute for Nuclear Research, JINR Dubna, Russia E. Di Capua, G. Vidal–Sitjes Università degli Studi e Sezione INFN, Ferrara, Italy A. Artamonov, S. Giani, S. Gilardoni, P. Gorbunov, A. Grant, A. Grossheim, P. Gruber, V. Ivanchenko, A. Kayis-Topaksu, J. Panman, I. Papadopoulos, E. Tcherniaev, I. Tsukerman, R. Veenhof, C. Wiebusch, P. Zucchelli CERN, Geneva, Switzerland A. Blondel, S. Borghi, M. Campanelli, M.C. Morone, G. Prior, R. Schroeter Section de Physique, Université de Genève, Switzerland R. Engel, C. Meurer Forschungszentrum Karlsruhe, Institut für Kernphysik, Karlsruhe, Germany I. Kato University of Kyoto, Japan U. Gastaldi Laboratori Nazionali di Legnaro dell’ INFN, Legnaro, Italy G. B. Mills Los Alamos National Laboratory, Los Alamos, USA J.S. Graulich, G. Grégoire Institut de Physique Nucléaire, UCL, Louvain-la-Neuve, Belgium M. Bonesini, F. Ferri Università degli Studi e Sezione INFN, Milano, Italy M. Kirsanov Institute for Nuclear Research, Moscow, Russia A. Bagulya, V. Grichine, N. Polukhina P. N. Lebedev Institute of Physics (FIAN), Russian Academy of Sciences, Moscow, Russia V. Palladino Università “Federico II” e Sezione INFN, Napoli, Italy L. Coney, D. Schmitz Columbia University, New York, USA G. Barr, A. De Santo, C. Pattison, K. Zuber Nuclear and Astrophysics Laboratory, University of Oxford, UK F. Bobisut, D. Gibin, A. Guglielmi, M. Mezzetto Università degli Studi e Sezione INFN, Padova, Italy J. Dumarchez, F. Vannucci LPNHE, Universités de Paris VI et VII, Paris, France U. Dore Università “La Sapienza” e Sezione INFN Roma I, Roma, Italy D. Orestano, F. Pastore, A. Tonazzo, L. Tortora Università degli Studi e Sezione INFN Roma III, Roma, Italy C. Booth, L. Howlett Dept. of Physics, University of Sheffield, UK M. Bogomilov, M. Chizhov, D. Kolev, R. Tsenov Faculty of Physics, St. Kliment Ohridski University, Sofia, Bulgaria S. Piperov, P. Temnikov Institute for Nuclear Research and Nuclear Energy, Academy of Sciences, Sofia, Bulgaria M. Apollonio, P. Chimenti, G. Giannini, G. Santin Università degli Studi e Sezione INFN, Trieste, Italy J. Burguet–Castell, A. Cervera–Villanueva, J.J. Gómez–Cadenas, J. Mart́ın–Albo, P. Novella, M. Sorel Instituto de F́ısica Corpuscular, IFIC, CSIC and Universidad de Valencia, Spain Now at FNAL, Batavia, Illinois, USA. Jointly appointed by Nuclear and Astrophysics Laboratory, University of Oxford, UK. Now at Codian Ltd., Langley, Slough, UK. Now at University of Glasgow, UK. Also supported by LPNHE, Universités de Paris VI et VII, Paris, France. Now at Imperial College, University of London, UK. ITEP, Moscow, Russian Federation. Permanently at Instituto de F́ısica de Cantabria, Univ. de Cantabria, Santander, Spain. Now at SpinX Technologies, Geneva, Switzerland. Now at TRIUMF, Vancouver, Canada. Now at University of St. Gallen, Switzerland. On leave of absence from Ecoanalitica, Moscow State University, Moscow, Russia. Now at Çukurova University, Adana, Turkey. Now at III Phys. Inst. B, RWTH Aachen, Aachen, Germany. On leave of absence from INFN, Sezione di Ferrara, Italy. Now at CERN, Geneva, Switzerland. Now at Univerity of Rome Tor Vergata, Italy. Now at Lawrence Berkeley National Laboratory, Berkeley, California, USA. K2K Collaboration. MiniBooNE Collaboration. Now at Section de Physique, Université de Genève, Switzerland, Switzerland. Now at Royal Holloway, University of London, UK. Now at University of Sussex, Brighton, UK. Now at ESA/ESTEC, Noordwijk, The Netherlands.

Results of a search for neutrinoless double- β decay using the COBRA demonstrator

Abstract In future high-energy physics experiments silicon detectors with a high spatial resolution will be used for tracking close to the interaction point. Besides crystal damage, the surface damage caused by ionizing irradiation is very important for the long-term performance of these devices. Therefore, systematic characterization of surface effects is necessary. For these investigations we designed a test field consistent of MOS structures and gate-controlled diodes to be produced with different vendors. A new gate-controlled diode with different current and capacitance measurement options will be introduced and first results of parameters evaluated on the unirradiated device as well as after irradiation with low energetic electrons, neutrons and charged hadrons will be presented. The gate-controlled diode with new features has been shown to be a powerful tool to investigate the oxide and interface quality before and after irradiation.