C. Heske
University of Nevada, Las Vegas
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Publication
Featured researches published by C. Heske.
Journal of Materials Research | 2010
Zhebo Chen; Thomas F. Jaramillo; Todd Deutsch; Alan Kleiman-Shwarsctein; Arnold J. Forman; Nicolas Gaillard; Roxanne Garland; Kazuhiro Takanabe; C. Heske; Mahendra K. Sunkara; Eric W. McFarland; Kazunari Domen; Eric L. Miller; John A. Turner; Huyen N. Dinh
Photoelectrochemical (PEC) water splitting for hydrogen production is a promising technology that uses sunlight and water to produce renewable hydrogen with oxygen as a by-product. In the expanding field of PEC hydrogen production, the use of standardized
Nano Letters | 2011
Gongming Wang; Yichuan Ling; Damon A. Wheeler; Kyle E. George; Kimberly Horsley; C. Heske; Jin Z. Zhang; Yat Li
This work reports a facile method for preparing highly photoactive α-Fe(2)O(3) films as well as their implementation as photoanodes for water oxidation. Transparent α-Fe(2)O(3) films were prepared by a new deposition-annealing (DA) process using nontoxic iron(III) chloride as the Fe precursor, followed by annealing at 550 °C in air. Ti-doped α-Fe(2)O(3) films were prepared by the same method, with titanium butoxide added as the Ti precursor. Impedance measurements show that the Ti-dopant serves as an electron donor and increases the donor density by 2 orders of magnitude. The photoelectrochemical performance of undoped and Ti-doped α-Fe(2)O(3) photoanodes was characterized and optimized through controlled variation of the Fe and Ti precursor concentration, annealing conditions, and the number of DA cycles. Compared to the undoped sample, the photocurrent onset potential of Ti-doped α-Fe(2)O(3) is shifted about 0.1-0.2 V to lower potential, thus improving the photocurrent and incident photon to current conversion efficiency (IPCE) at lower bias voltages. Significantly, the optimized Ti-doped α-Fe(2)O(3) film achieved the highest photocurrent density (1.83 mA/cm(2)) and IPCE values at 1.02 V vs RHE for α-Fe(2)O(3) photoanode. The enhanced photocurrent is attributed to the improved donor density and reduced electron-hole recombination at the time scale beyond a few picoseconds, as a result of Ti doping.
Journal of Physics: Condensed Matter | 2002
Satish C. B. Myneni; Yi Luo; L. A. Naslund; Matteo Cavalleri; Lars Ojamäe; Hirohito Ogasawara; Alexander Pelmenschikov; Ph. Wernet; P. Väterlein; C. Heske; Zahid Hussain; Lars G. M. Pettersson; Anders Nilsson
We have studied the electronic structure of liquid water using x-ray absorption spectroscopy at the oxygen K edge. Since the x-ray absorption process takes less than a femtosecond, it allows probing of the molecular orbital structure of frozen, local geometries of water molecules at a timescale that has not previously been accessible. Our results indicate that the electronic structure of liquid water is significantly different from that of the solid and gaseous forms, resulting in a pronounced pre-edge feature below the main absorption edge in the spectrum. Theoretical calculations of these spectra suggest that this feature originates from specific configurations of water, for which the H-bond is broken on the H-donating site of the water molecule. This study provides a fingerprint for identifying broken donating H-bonds in the liquid and shows that an unsaturated H-bonding environment exists for a dominating fraction of the water molecules.
Applied Physics Letters | 1998
Alessandro Curioni; Wanda Andreoni; R. Treusch; F. J. Himpsel; E. I. Haskal; Paul F. Seidler; C. Heske; S. Kakar; T. van Buuren; Louis J. Terminello
The electronic structure of Alq3 is investigated using density functional theory-based calculations, photoemission and near-edge x-ray absorption fine structure. The distinct features of the observed spectra are understood in terms of contributions from the different atoms and molecular orbitals. Fingerprints of the molecular bonding and of the individual atoms are identified. These results are meant to be a reference for the monitoring of chemical processes that Alq3 may undergo during fabrication or degradation of light-emitting devices, and for the understanding of the effects of ligand or metal substitution.
Applied Physics Letters | 2011
M. Bär; Björn-Arvid Schubert; B. Marsen; Regan G. Wilks; Sujitra J. Pookpanratana; M. Blum; Stefan Krause; Thomas Unold; W. Yang; L. Weinhardt; C. Heske; Hans-Werner Schock
The electronic structure of the CdS/Cu2ZnSnS4 (CZTS) heterojunction was investigated by direct and inverse photoemission. The effects of a KCN etch of the CZTS absorber prior to CdS deposition on the band alignment at the respective interface were studied. We find a “cliff”-like conduction band offset at the CdS/CZTS interface independent of absorber pretreatment and a significant etch-induced enhancement of the energetic barrier for charge carrier recombination across the CdS/CZTS interface.
Applied Physics Letters | 1999
C. Heske; D. Eich; R. Fink; E. Umbach; T. van Buuren; C. Bostedt; Louis J. Terminello; S. N. Kakar; Melissa M. Grush; T. A. Callcott; F. J. Himpsel; David L. Ederer; Rupert C. C. Perera; W. Riedl; F. Karg
A combination of x-ray emission spectroscopy and x-ray photoelectron spectroscopy using high brightness synchrotron radiation has been employed to investigate the electronic and chemical structure of the buried CdS/Cu(In, Ga)Se2 interface, which is the active interface in highly efficient thin film solar cells. In contrast to the conventional model of an abrupt interface, intermixing processes involving the elements S, Se, and In have been identified. The results shed light on the electronic structure and interface formation processes of semiconductor heterojunctions and demonstrate a powerful tool for investigating buried interfaces in general.
Applied Physics Letters | 2004
C. Bostedt; T. van Buuren; Trevor M. Willey; N. Franco; Louis J. Terminello; C. Heske; T. Möller
Quantum-confinement effects in the conduction band of deposited germanium nanocrystals are measured to be greater than in similar-sized silicon nanocrystals. The germanium particles are condensed out of the gas phase and their electronic properties are determined with x-ray absorption spectroscopy. The conduction band edge shifts range from 0.2 eV for 2.7 nm particles up to 1.1 eV for 1.2 nm particles.
Radiation Research | 2004
Yan Zubavichus; O. Fuchs; L. Weinhardt; C. Heske; E. Umbach; Jonathan D. Denlinger; Michael Grunze
Abstract Zubavichus, Y., Fuchs, O., Weinhardt, L., Heske, C., Umbach, E., Denlinger, J. D. and Grunze, M. Soft X-Ray-Induced Decomposition of Amino Acids: An XPS, Mass Spectrometry, and NEXAFS Study. Radiat. Res. 161, 346–358 (2004). Decomposition of five amino acids, alanine, serine, cysteine, aspartic acid, and asparagine, under irradiation with soft X rays (magnesium KαX-ray source) in ultra-high vacuum was studied by means of X-ray photoelectron spectrometry (XPS) and mass spectrometry. A comparative analysis of changes in XPS line shapes, stoichiometry and residual gas composition indicates that the molecules decompose by several pathways. Dehydration, decarboxylation, decarbonylation, deamination and desulfurization of pristine molecules accompanied by desorption of H2, H2O, CO2, CO, NH3and H2S are observed with rates depending on the specific amino acid. NEXAFS spectra of cysteine at the carbon, oxygen and nitrogen K-shell and sulfur L2,3edges complement the XPS and mass spectrometry data and show that the exposure of the sample to an intense soft X-ray synchrotron beam results in the formation of C-C and C-N double and triple bonds. Qualitatively, the amino acids studied can be arranged in the following ascending order of radiation stability: serine < alanine < aspartic acid < cysteine < asparagine.
Advanced Materials | 2015
Daniel Volz; Ying Chen; Manuela Wallesch; Rui Liu; Charlotte Fléchon; Daniel M. Zink; Jana Friedrichs; Harald Flügge; Ralph Steininger; Jörg Göttlicher; C. Heske; L. Weinhardt; Stefan Bräse; Franky So; Thomas Baumann
The substitution of rare metals such as iridium and platinum in light-emitting materials is a key step to enable low-cost mass-production of organic light-emitting diodes (OLEDs). Here, it is demonstrated that using a solution-processed, fully bridged dinuclear Cu(I)-complex can yield very high efficiencies. An optimized device gives a maximum external quantum efficiency of 23 ± 1% (73 ± 2 cd A(-1) ).
Synthetic Metals | 2000
L Chkoda; C. Heske; M. Sokolowski; E. Umbach; F. Steuber; J. Staudigel; M. Stößel; Jürgen Simmerer
Abstract Surface compositions and work functions ( Φ ) of commercially available indium tin oxide (ITO) substrates were measured by photoelectron spectroscopy (UPS/XPS). Whereas substrates cleaned by organic solvents are significantly contaminated and have low Φ values (3.9–4.2±0.1 eV), substrates cleaned by Ar + sputtering typically have values of Φ =4.3±0.1 eV. Even higher Φ values (up to 4.7±0.1 eV) are obtained by reactive ion etching with oxygen, likely related to oxygen-containing surface impurities. Evaporated TPD is physisorbed on ITO, but causes a drop of the vacuum potential by 0.2–0.4 eV (depending on the ITO pretreatment) directly at the TPD/ITO interface, in contradiction to the common-vacuum level rule. The TPD highest occupied molecular orbital (HOMO) is found 1.1–1.3 eV below the Fermi level of the ITO, which indicates the presence of a significant barrier for hole injection.