C. Janowitz

Band structure ofMoS2,MoSe2,andα−MoTe2:Angle-resolved photoelectron spectroscopy andab initiocalculations

In this work the complete valence-band structure of the molybdenum dichalcogenides

Experimental electronic structure of In2O3 and Ga2O3

{\mathrm{MoS}}_{2},

The electronic structure of β-Ga2O3

{\mathrm{MoSe}}_{2},

Transport and angular resolved photoemission measurements of the electronic properties of In2O3 bulk single crystals

and

Angle-resolved photoemission spectroscopy of Sr 2 CuO 2 Cl 2

\ensuremath{\alpha}\ensuremath{-}{\mathrm{MoTe}}_{2}

The surface band structure of β-Ga2O3

is presented and discussed in comparison. The valence bands have been studied using both angle-resolved photoelectron spectroscopy (ARPES) with synchrotron radiation, as well as ab initio band-structure calculations. The ARPES measurements have been carried out in the constant-final-state (CFS) mode. The results of the calculations show in general very good agreement with the experimentally determined valence-band structures allowing for a clear identification of the observed features. The dispersion of the valence bands as a function of the perpendicular component

Evolution of the density of states at the Fermi level ofBi2−yPbySr2−xLaxCuO6+δandBi2Sr2−xLaxCuO6+δcuprates with hole doping

{k}_{\ensuremath{\perp}}

CdTe (110) surface electronic states

of the wave vector reveals a decreasing three-dimensional character from

The effect of lithium intercalation on the electronic structure of the ternary compound semiconductors ZrSe2−xSx

{\mathrm{MoS}}_{2}