C. Kazmierski

10 Gbit/s PON demonstration using a REAM-SOA in a bidirectional fiber configuration up to 25 km SMF

A REAMSOA chip is characterized as part of an ONU in single-pass and then bidirectional upstream 10 Gbit/s PON configurations. Chromatic dispersion and Rayleigh backscattering impacts are assessed.

A hybrid electroabsorption modulator device for generation of high spectral-efficiency optical modulation formats

We report a novel hybrid integrated optic device consisting of AlGaInAs/InP electroabsorption modulators and a four-arm silica-on-silicon planar lightwave circuit optical interferometer. The device is designed for generation of high spectral efficiency optical modulation formats. We demonstrate generation of 21.4 Gb/s quadrature phase shift keyed optical signals with electrical data drives of 2V(pp) amplitudes, achieving a bit error rate of 10(-9) with the required optical signal to noise ratio of ~18 dB in a 0.1 nm resolution bandwidth.

10Gbit/s Amplified Reflective Electroabsorption Modulator for Colourless Access Networks

For high speed remote colorless modulation in FTTH technology, a new 10Gbit/s monolithically integrated amplified reflective electroabsorption modulator (R-EAM-SOA) is demonstrated over 50nm spectral range and over 20°C-60°C, with excellent eye diagrams.

New integrated buried laser-ridge modulator with identical active layer

Integrated laser modulators are attractive devices for wavelength-division-multiplexing optical systems due to their compactness, high output power, and low cost. Their fabrication simplicity is a way to decrease further the transmitter cost and address new opening markets of short range and metropolitan networks. We report a new integration scheme electroabsorption-modulator distributed feedback (DFB) laser based on well-established industrial solutions for discrete buried ridge (BRS) DFB lasers and discrete shallow ridge modulators. Processing simplification with an identical active layer has been possible due to a good behavior of strongly positively detuned BRS lasers. The integrated devices demonstrated 30-dB extinction ratio with 10-GHz bandwidth and P/sub out/=10 dBm for emission in 1.55-/spl mu/m range.

Pulse-carver-free 50-Gb/s RZ-DQPSK generation using hybrid photonic-integrated electroabsorption modulators

We report generation of 50-Gb/s RZ-DQPSK signal, without an external pulse carver, using an electroabsorption modulators-based hybrid modulator. We demonstrate the first error-free 50-Gb/s RZ-DQPSK generation using a semiconductor-based modulator with low drive voltages of 2.3 V.

Nonlinear Effects Analysis in DBR Lasers: Applications to DBR-SOA and New Double Bragg DBR

This paper presents a theoretical and experimental study of nonlinear effects in distributed Bragg reflector (DBR)-type tunable lasers, which are responsible for asymmetric spectral or power characteristics, and for hysteresis phenomena. We propose an optimized DBR semiconductor optical amplifier design that suppresses these effects, making the control simpler and more reliable, while maintaining the same performances as a DBR (16 nm tuning, 40 dB side mode suppression ratio, 20 mW coupled output power). Aiming to reach C-band tuning range with only one Bragg current control and reduced nonlinear effects, a new double Bragg DBR laser is proposed.

A hybrid photonic-integrated electroabsorption modulator device for 50-Gb/s DQPSK generation

We report a compact hybrid photonic-integrated optical device consisting of AlGaInAs/InP electroabsorption modulators and a four-arm silica-on-silicon planar lightwave circuit optical interferometer. We use the device to generate 50-Gb/s NRZ-DQPSK signal with excellent performances comparable to those of the commercial lithium niobate DQPSK modulators, while requiring only 2.5Vpp drive signals.

80-Gb/s RZ-OOK generation using hybrid photonic-integrated electroabsorption modulators and 40G electronics

We report generation of 80-Gb/s RZ-OOK signals using a hybrid photonic integrated electroabsorption device. We achieve this using electronics having a bandwidth of 40 GHz or less and without using an external optical pulsed source.

56Gb/s PDM-BPSK experiment with a novel InP-monolithic source based on prefixed optical phase switching

A novel monolithic QPSK-ready transmitter source based on prefixed phase switching by fast EAMs has been realized on InP using a flexible photonic integrating circuit technology. It has been used up to 56Gb/s in DPSK coherent transmission experiments.

1650-km transmission of 50-Gb/s NRZ and RZ-DQPSK signals generated using an electroabsorption modulators-silica planar lightwave circuit hybrid integrated device

We demonstrate long-haul transmission of 50-Gb/s RZ and NRZ-DQPSK signals generated using an electroabsorption-based optical vector modulator. Transmission over 1650 km is achieved with less than 1.2 dB OSNR penalty relative to back-to-back performance.